Jie Zhu - Academia.edu (original) (raw)

Papers by Jie Zhu

Research paper thumbnail of Effect of Source Field Plate Cracks on the Electrical Performance of AlGaN/GaN HEMT Devices

Crystals

In the current study, the effects of cracks in source field plates (SFPs) on the electrical perfo... more In the current study, the effects of cracks in source field plates (SFPs) on the electrical performance of AlGaN/GaN high electron mobility transistors (HEMTs) are investigated systematically using numerical simulation. In detail, the influence of crack width and junction angle in SFPs on device performance is studied. The results indicate that the SFP structure increases the breakdown voltage of a device, but the occurrence of cracks causes premature breakdown, which is confirmed experimentally by the structural analysis of these devices after breakdown. With an increase in crack width, the electrical performance becomes worse. A beveled SFP architecture is proposed by increasing the angle at the SFP junction to reduce the probability of cracking and enhance the reliability of the device. However, with an increase in bevel angle, the modulation effect of the SFP on the channel electric field is gradually weakened. Therefore, it is necessary to balance the relationship between elect...

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Research paper thumbnail of 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Applied Physics Letters, 2022

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Research paper thumbnail of Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments

Chinese Physics B, 2020

Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mob... more Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility transistors (MOS-HEMTs) with post-etch surface treatment was studied in this paper. Diffusion-controlled interface oxidation treatment and wet etch process were adopted to improve the interface quality of MOS-HEMTs. With capacitance–voltage (C–V) measurement, the density of interface and border traps were calculated to be 1.13 × 1012 cm−2 and 6.35 × 1012 cm−2, effectively reduced by 27% and 14% compared to controlled devices, respectively. Furthermore, the state density distribution of border traps with large activation energy was analyzed using photo-assisted C–V measurement. It is found that irradiation of monochromatic light results in negative shift of C–V curves, which indicates the electron emission process from border traps. The experimental results reveals that the major border traps have an activation energy about 3.29 eV and the change of post-etch surface treatment proce...

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Research paper thumbnail of Trap analysis of the composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperature

Chinese Physics B, 2020

The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases (3DEGs... more The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases (3DEGs) at the GaN/graded AlGaN:Si heterostructure and create a composite two-dimensional (2D)–three-dimensional (3D) channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C heterostructure (DH:Si/C). Frequency-dependent capacitances and conductance are measured to investigate the characteristics of the multi-temperature trap states of in DH:Si/C and AlGaN/GaN/GaN:C heterostructure (SH:C). There are fast, medium, and slow trap states in DH:Si/C, while only medium trap states exist in SH:C. The time constant/trap density for medium trap state in SH:C heterostructure are (11 μs–17.7 μs)/(1.1 × 1013 cm−2·eV−1–3.9× 1013 cm−2·eV−1) and (8.7 μs–14.1 μs)/(0.7× 1013 cm−2·eV−1–1.9× 1013 cm−2·eV−1) at 300 K and 500 K respectively. The time constant/trap density for fast, medium, and slow trap states in DH:Si/C heterostructure are (4.2 μs–7.7 μs)/(1.5× 1013 cm−2·eV−1–3.2× 1013 cm−2·eV−1), (6.8 μs–11.8 μs)/(0.8× 1013 ...

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Research paper thumbnail of Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Chinese Physics B, 2020

We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate d... more We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate dielectric under different negative gate stresses. The complex non-monotonic evolution of threshold voltage under the negative stress and during the recovery process is induced by the combination effect of two mechanisms. The effect of trapping behavior of interface state at SiN/AlGaN interface and the effect of zener traps in AlGaN barrier layer on the threshold voltage instability are opposite to each other. The threshold voltage shifts negatively under the negative stress due to the detrapping of the electrons at SiN/AlGaN interface, and shifts positively due to zener trapping in AlGaN barrier layer. As the stress is removed, the threshold voltage shifts positively for the retrapping of interface states and negatively for the thermal detrapping in AlGaN. However, it is the trapping behavior in the AlGaN rather than the interface state that results in the change of transconductance in t...

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Research paper thumbnail of Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors*

Chinese Physics B, 2019

In this paper, the interface states of the AlGaN/GaN metal–insulator–semiconductor (MIS) high ele... more In this paper, the interface states of the AlGaN/GaN metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs) with an Al2O3 gate dielectric are systematically evaluated. By frequency-dependent capacitance and conductance measurements, trap density and time constant at Al2O3/AlGaN and AlGaN/GaN interface are determined. The experimental results reveal that the density of trap states and the activation energy at the Al2O3/AlGaN interface are much higher than at the AlGaN/GaN interface. The photo-assisted capacitance-voltage measurements are performed to characterize the deep-level traps located near mid-gap at the Al2O3/AlGaN interface, which indicates that a density of deep-level traps is lower than the density of the shallow-level states.

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Research paper thumbnail of The effective Hamiltonian and propagator of a parabolic confined dissipative electron under a perpendicular magnetic field

Physica A: Statistical Mechanics and its Applications, 2019

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Research paper thumbnail of 90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application

Applied Physics Letters, 2017

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Research paper thumbnail of Naturally occurring autoantibodies against α-synuclein rescues memory and motor deficits and attenuates α-synuclein pathology in mouse model of Parkinson's disease

Neurobiology of Disease, 2019

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Research paper thumbnail of Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures

Applied Physics Letters, 2017

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Research paper thumbnail of Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

Materials Research Express, 2017

This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal–ins... more This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm−2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

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Research paper thumbnail of Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

Chinese Physics B, 2016

Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heter... more Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E v + 0.47 eV, and E v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E c − 0.56 eV are located in the channel, those with E c − 0.33 eV and E c − 0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.

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Research paper thumbnail of Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Chinese Physics B, 2015

In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for hig... more In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states.

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Research paper thumbnail of Long non-coding RNA TUG1 promotes cervical cancer progression by regulating the miR-138-5p-SIRT1 axis

Oncotarget, Jan 26, 2017

Increasing evidences showed that long non-coding RNAs (lncRNAs) play vital roles in tumor progres... more Increasing evidences showed that long non-coding RNAs (lncRNAs) play vital roles in tumor progression. Recent studies indicated that lncRNA TUG1 was upregulated and promoted tumor processes in several cancers. However, the expression and underlying mechanism of TUG1 in cervical cancer remain unclear. In the present study, we found that TUG1 expression was upregulated in cervical cancer tissues and correlated with advanced clinical features and poor overall survival. TUG1 knockdown suppressed cervical cancer cell growth and metastasis in vitro and tumor growth in vivo. In addition, our results indicated that TUG1 could act as an endogenous sponge by directly binding to miR-138-5p and suppressed miR-138-5p expression. Furthermore, we found that TUG1 could reverse the inhibitory effect of miR-138-5p on cervical cancer cells processes, which might be involved in the activation of SIRT1, a target gene of miR-138-5p, and activation of Wnt/β-catenin signaling pathway. Taken together, we el...

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Research paper thumbnail of Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Applied Physics Letters, 2014

ABSTRACT Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility ... more ABSTRACT Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors are investigated. The gate leakage current decreases significantly upon removing the SiN layer and no clear critical voltage for the sudden degradation of the gate leakage current can be observed in the reverse-bias step-stress experiments. Gate-lag measurements reveal the decrease of the fast-state surface traps and the increase of slow-state traps after the passivation layer removal. It is postulated that consistent surface charging relieves the electric field peak on the gate edge, thus the inverse piezoelectric effect is shielded.

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Research paper thumbnail of Covariant amplitudes for mesons

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Research paper thumbnail of Explicit expressions of spin wave functions

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Research paper thumbnail of CP violation in psi(2S) -> J/psi pi pi processes

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Research paper thumbnail of Canonical charmonium interpretation forY(4360)andY(4660)

Physical Review D, 2008

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Research paper thumbnail of The Large Sky Area Multi-Object Fiber Spectroscopic Telescope (LAMOST)

Research in Astronomy and Astrophysics, 2012

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Research paper thumbnail of Effect of Source Field Plate Cracks on the Electrical Performance of AlGaN/GaN HEMT Devices

Crystals

In the current study, the effects of cracks in source field plates (SFPs) on the electrical perfo... more In the current study, the effects of cracks in source field plates (SFPs) on the electrical performance of AlGaN/GaN high electron mobility transistors (HEMTs) are investigated systematically using numerical simulation. In detail, the influence of crack width and junction angle in SFPs on device performance is studied. The results indicate that the SFP structure increases the breakdown voltage of a device, but the occurrence of cracks causes premature breakdown, which is confirmed experimentally by the structural analysis of these devices after breakdown. With an increase in crack width, the electrical performance becomes worse. A beveled SFP architecture is proposed by increasing the angle at the SFP junction to reduce the probability of cracking and enhance the reliability of the device. However, with an increase in bevel angle, the modulation effect of the SFP on the channel electric field is gradually weakened. Therefore, it is necessary to balance the relationship between elect...

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Research paper thumbnail of 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Applied Physics Letters, 2022

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Research paper thumbnail of Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments

Chinese Physics B, 2020

Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mob... more Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility transistors (MOS-HEMTs) with post-etch surface treatment was studied in this paper. Diffusion-controlled interface oxidation treatment and wet etch process were adopted to improve the interface quality of MOS-HEMTs. With capacitance–voltage (C–V) measurement, the density of interface and border traps were calculated to be 1.13 × 1012 cm−2 and 6.35 × 1012 cm−2, effectively reduced by 27% and 14% compared to controlled devices, respectively. Furthermore, the state density distribution of border traps with large activation energy was analyzed using photo-assisted C–V measurement. It is found that irradiation of monochromatic light results in negative shift of C–V curves, which indicates the electron emission process from border traps. The experimental results reveals that the major border traps have an activation energy about 3.29 eV and the change of post-etch surface treatment proce...

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Research paper thumbnail of Trap analysis of the composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperature

Chinese Physics B, 2020

The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases (3DEGs... more The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases (3DEGs) at the GaN/graded AlGaN:Si heterostructure and create a composite two-dimensional (2D)–three-dimensional (3D) channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C heterostructure (DH:Si/C). Frequency-dependent capacitances and conductance are measured to investigate the characteristics of the multi-temperature trap states of in DH:Si/C and AlGaN/GaN/GaN:C heterostructure (SH:C). There are fast, medium, and slow trap states in DH:Si/C, while only medium trap states exist in SH:C. The time constant/trap density for medium trap state in SH:C heterostructure are (11 μs–17.7 μs)/(1.1 × 1013 cm−2·eV−1–3.9× 1013 cm−2·eV−1) and (8.7 μs–14.1 μs)/(0.7× 1013 cm−2·eV−1–1.9× 1013 cm−2·eV−1) at 300 K and 500 K respectively. The time constant/trap density for fast, medium, and slow trap states in DH:Si/C heterostructure are (4.2 μs–7.7 μs)/(1.5× 1013 cm−2·eV−1–3.2× 1013 cm−2·eV−1), (6.8 μs–11.8 μs)/(0.8× 1013 ...

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Research paper thumbnail of Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Chinese Physics B, 2020

We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate d... more We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate dielectric under different negative gate stresses. The complex non-monotonic evolution of threshold voltage under the negative stress and during the recovery process is induced by the combination effect of two mechanisms. The effect of trapping behavior of interface state at SiN/AlGaN interface and the effect of zener traps in AlGaN barrier layer on the threshold voltage instability are opposite to each other. The threshold voltage shifts negatively under the negative stress due to the detrapping of the electrons at SiN/AlGaN interface, and shifts positively due to zener trapping in AlGaN barrier layer. As the stress is removed, the threshold voltage shifts positively for the retrapping of interface states and negatively for the thermal detrapping in AlGaN. However, it is the trapping behavior in the AlGaN rather than the interface state that results in the change of transconductance in t...

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Research paper thumbnail of Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors*

Chinese Physics B, 2019

In this paper, the interface states of the AlGaN/GaN metal–insulator–semiconductor (MIS) high ele... more In this paper, the interface states of the AlGaN/GaN metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs) with an Al2O3 gate dielectric are systematically evaluated. By frequency-dependent capacitance and conductance measurements, trap density and time constant at Al2O3/AlGaN and AlGaN/GaN interface are determined. The experimental results reveal that the density of trap states and the activation energy at the Al2O3/AlGaN interface are much higher than at the AlGaN/GaN interface. The photo-assisted capacitance-voltage measurements are performed to characterize the deep-level traps located near mid-gap at the Al2O3/AlGaN interface, which indicates that a density of deep-level traps is lower than the density of the shallow-level states.

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Research paper thumbnail of The effective Hamiltonian and propagator of a parabolic confined dissipative electron under a perpendicular magnetic field

Physica A: Statistical Mechanics and its Applications, 2019

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Research paper thumbnail of 90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application

Applied Physics Letters, 2017

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Research paper thumbnail of Naturally occurring autoantibodies against α-synuclein rescues memory and motor deficits and attenuates α-synuclein pathology in mouse model of Parkinson's disease

Neurobiology of Disease, 2019

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Research paper thumbnail of Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures

Applied Physics Letters, 2017

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Research paper thumbnail of Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

Materials Research Express, 2017

This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal–ins... more This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm−2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

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Research paper thumbnail of Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

Chinese Physics B, 2016

Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heter... more Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E v + 0.47 eV, and E v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E c − 0.56 eV are located in the channel, those with E c − 0.33 eV and E c − 0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.

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Research paper thumbnail of Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Chinese Physics B, 2015

In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for hig... more In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states.

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Research paper thumbnail of Long non-coding RNA TUG1 promotes cervical cancer progression by regulating the miR-138-5p-SIRT1 axis

Oncotarget, Jan 26, 2017

Increasing evidences showed that long non-coding RNAs (lncRNAs) play vital roles in tumor progres... more Increasing evidences showed that long non-coding RNAs (lncRNAs) play vital roles in tumor progression. Recent studies indicated that lncRNA TUG1 was upregulated and promoted tumor processes in several cancers. However, the expression and underlying mechanism of TUG1 in cervical cancer remain unclear. In the present study, we found that TUG1 expression was upregulated in cervical cancer tissues and correlated with advanced clinical features and poor overall survival. TUG1 knockdown suppressed cervical cancer cell growth and metastasis in vitro and tumor growth in vivo. In addition, our results indicated that TUG1 could act as an endogenous sponge by directly binding to miR-138-5p and suppressed miR-138-5p expression. Furthermore, we found that TUG1 could reverse the inhibitory effect of miR-138-5p on cervical cancer cells processes, which might be involved in the activation of SIRT1, a target gene of miR-138-5p, and activation of Wnt/β-catenin signaling pathway. Taken together, we el...

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Research paper thumbnail of Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Applied Physics Letters, 2014

ABSTRACT Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility ... more ABSTRACT Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors are investigated. The gate leakage current decreases significantly upon removing the SiN layer and no clear critical voltage for the sudden degradation of the gate leakage current can be observed in the reverse-bias step-stress experiments. Gate-lag measurements reveal the decrease of the fast-state surface traps and the increase of slow-state traps after the passivation layer removal. It is postulated that consistent surface charging relieves the electric field peak on the gate edge, thus the inverse piezoelectric effect is shielded.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Covariant amplitudes for mesons

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Research paper thumbnail of Explicit expressions of spin wave functions

Bookmarks Related papers MentionsView impact

Research paper thumbnail of CP violation in psi(2S) -> J/psi pi pi processes

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Canonical charmonium interpretation forY(4360)andY(4660)

Physical Review D, 2008

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Research paper thumbnail of The Large Sky Area Multi-Object Fiber Spectroscopic Telescope (LAMOST)

Research in Astronomy and Astrophysics, 2012

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