Alec Reader - Academia.edu (original) (raw)

Dr Alec Reader,
Dr Reader was until recently the director of the Micro- & Nano-technology Knowledge Transfer Network and he is currently the chairman of JEMI. He has over 30 years of experience in the micro and nano-electronics industries, working most recently at Innos and Polymer Vision. He is accredited with establishing Innos at the forefront of industrial R&D, championing the company's ability to bridge the gap between emergent technologies and commercial exploitation. He was instrumental in obtaining a very large order from, and subsequently selling Innos to, Polymer Vision of The Netherlands (a Philips spin-out company).

His tenure at Innos (Polymer Vision) was a continuation of a successful career that includes prominent positions as International Marketing Manager and Business-Line Manager at Philips Analytical (Semiconductors) where he is widely acknowledged for growing the turnover of a new business to over €40m pa in three years. Prior to developing a business oriented career, Dr Reader was a Head of Department at ST-Microelectronics in France, a post–doctoral fellow at Delft Technical University and spent about 20 years at Philips Research and Philips Semiconductors in Eindhoven.

Dr Reader has succeeded in transforming four academic start-up’s to mainstream companies and has actively led large (in excess of €150m) European projects in the semiconductor industry. He brings this knowledge to the NanoKTN along with a wealth of business development and program management expertise gained through involvement with European MEDEA (Eureka program), Irish-IDA and UK-DTI technology transfer programs in micro & nano-electronics, telecoms and ICT sectors.
His achievements include over 140 published technical papers, along with many review articles and key patents. Dr Reader holds a PhD in Science of Materials (Solid State Physics) from the University of Birmingham (UK) and a B.Sc (Hons) in Physics. He is a Fellow of the Institute of Physics, and a member of the Institute of Directors, the Institute of Engineering & Technology, the IEEE, and the Institute of Materials,.

less

Related Authors

Gautam Anand

Indian Institute of Engineering Science and Technology, Shibpur

Goldie Oza

Centro de Investigacion y Estudios Avanzados del IPN

Uploads

Papers by Alec Reader

Electronics world and wireless world, 2007

physica status solidi (b), 2008

A. Mitra et al.: Optical properties of CuCl films on silicon substrates

?-CuCl is a wide-bandgap (Eg = 3.395eV), direct bandgap, semiconductor material with a cubic zinc... more ?-CuCl is a wide-bandgap (Eg = 3.395eV), direct bandgap, semiconductor material with a cubic zincblende lattice structure. Its lattice constant, aCuCl = 0.541 nm, means that the lattice mismatch to Si (aSi = 0.543 nm) is direction. Photoluminescence (PL) and Cathodoluminescence (CL) reveal a strong room temperature Z3 excitonic emission at ~387nm. A demonstration electroluminescent device (ELD) structure based on the deposition of CuCl on Si was developed. Preliminary electroluminescence measurements confirm UV light emission at wavelengths of ~380nm and ~387nm, due to excitonic behaviour. A further emission occurs in the bandgap region at ~360nm

Electronics World Wireless World, 2009

A method of creating a pattern of an integrated circuit (100), using a photolithography in the fi... more A method of creating a pattern of an integrated circuit (100), using a photolithography in the first region of the substrate (108) (102), creating a plurality of features of the first photoresist layer including. The method further includes forming at least two characteristic object using pitch multiplication (multiplication) for each of the features of the photoresist layer (120) beneath the masking layer (116). Features of the lower masking layer (116) has a loop-shaped end portion (124). The method further comprises a loop-shaped end on the lower masking layer (116) to (124), that covers the substrate second region (104) a second photoresist layer (108) (126) including. The method further includes on the substrate (108), through the features of the lower masking layer a second region without etching, etching a pattern of grooves. These grooves have a groove width. .The 13

Electronics World Wireless World, 2007

AIP Conference …, 1994

S-parameter positron beam measurements have been done on several kinds of a-Si: Kr-sputtered a-Si... more S-parameter positron beam measurements have been done on several kinds of a-Si: Kr-sputtered a-Si, PECVD a-Si, MeV ion beam amorphized Si and a-Si grown in an MBE-system at a low deposition temperature. Kr sputtered a-Si becomes denser for higher Kr concentration. PECVD a-Si:H contains micro-cavities with a size depending on growth temperature. MeV ion beam amorphized Si contains 1.2 at.

Journal of Applied Physics, 1994

The redistribution of Ga in amorphous silicon (a-Si) in the temperature range of 560-830 K by mea... more The redistribution of Ga in amorphous silicon (a-Si) in the temperature range of 560-830 K by means of medium-energy ion scattering has been studied. During the initial 10 s of the annealing the diffusivity shows a transient behavior that is attributed to the change in the relaxation state of the amorphous matrix. From 560 to 830 K the ditisivity during relaxation is enhanced by seven to two orders of magnitude compared to the value for bulk a-Si. Possible models that show the observed transient diffusion behavior are discussed.

senior IRC staff; International SEMATECH-Linda Wilson, ITRS information manager / managing editor... more senior IRC staff; International SEMATECH-Linda Wilson, ITRS information manager / managing editor; Sarah Mangum, ITRS webmaster;

Le Journal de Physique IV, 1995

Currently the trend in the Si IC industry is to produce epitaxial material layers by advanced gro... more Currently the trend in the Si IC industry is to produce epitaxial material layers by advanced growth and deposition techniques. Examples of these are Si and SiGe low temperature epitaxy, Si selective epitaxy and metallic silicide epitaxy. In order to obtain good electrical properties it is important that the epitaxial material shows no extended lattice defects and has a minimal concentration of lattice point defects. Given the concentrations of these phenomena a sensitive experimental technique is required to characterise the materials. The application of the positron annihilation technique in this IC research area is demonstrated by two examples, namely, characterization of Si Molecular Beam Epitaxy (MBE) and Atmospheric Pressure Chemical Vapour Deposition (APCVD) epi-layers and the assessment of the quality of CoSi, epi-layers produced by the solid-state reaction with the Si substrate and an amorphous Co7,W,, sputtered layer. Results will be presented in terms of defect concentrations derived from positron diffusion lengths.

Journal of Applied Physics, Apr 15, 1988

The initial reaction in amorphous Si-Ti-amorphous Si trilayers was investigated with Auger electr... more The initial reaction in amorphous Si-Ti-amorphous Si trilayers was investigated with Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction. It was clearly demonstrated that at temperatures not exceeding 450 °C an amorphous Ti-Si alloy is formed. At temperatures of 500 °C and higher, crystalline TiSi2 with the ZrSi2 (C49) structure was found. The growth kinetics of the amorphous silicide could not be described by a simple diffusion controlled process. It was shown that at 400 °C the thickness of the amorphous silicide is limited to approximately 18 nm. Since it was found that the growth of the amorphous phase is accompanied by excessive Kirkendall void formation, it is proposed that these voids eventually suppress the growth of amorphous silicide. The composition of the amorphous phase was determined to be between TiSi0.9 and TiSi1.2, i.e., close to the composition of the monosilicide.

MRS Proceedings, 1987

ABSTRACT The reactions in sputter deposited Si-Ti-Si diffusion couples were investigated with X-r... more ABSTRACT The reactions in sputter deposited Si-Ti-Si diffusion couples were investigated with X-ray diffraction, Auger electron spectroscopy and cross-section transmission electron microscopy. Anneals at a temperature of 400°C resulted in the growth of an amorphous phase at the Si-Ti interfaces. Crystalline silicides were only found after an anneal at temperatures of 500°C or higher.It was demonstrated that an amorphous layer of approximately 8 nm thickness sustained a concentration gradient from about 73% Si at the Si side to about 28% Si at the Ti side of the diffusion couple. The measured width of the phase field agreed with the width predicted from a calculated free energy versus composition diagram. Actually the observed phase field was found to be so wide, that it contains the stoichiometry of all equilibrium silicides. The consequences of our results for the explanation of silicide first phase nucleation were discussed.