Tsunehiro Ino - Academia.edu (original) (raw)
Papers by Tsunehiro Ino
Digest. International Electron Devices Meeting,
parameters of the nuclear reactor system such as measurements of reactivity, reaction rates, buck... more parameters of the nuclear reactor system such as measurements of reactivity, reaction rates, buckling, flux distribution, reactivity coefficients, and fuel burnup. 2.1 Cross Section Evaluation Working Group The Cross Section Evaluation Working Group (CSEWG) was organized in 1966 and is now a cooperative effort of the national laboratories, industry, and universities in the United States (US) and Canada. The main mission of the CSEWG is to produce the US Evaluated Nuclear Data File (ENDF), which has been adopted as the international standard in 2001 (CSEWG, 2010). The CSEWG community has utilized integral experiment results as a mechanism for validating ENDF/B data files. In 1973, the CSEWG community has compiled 25 fast reactor and 36 thermal reactor benchmark problems, of which examples are given below (Alter et al., 1974). JEZEBEL Bare sphere of plutonium especially suited for testing the plutonium cross sections in the fission source energy range GODIVA Bare sphere of enriched uranium especially suited for testing 235 U and 238 U cross sections in the fission source energy range TRX-1, 2, 3, 4 H 2 O-moderated, fully reflected simple assemblies operated at room temperature with uranium metal (1.3 wt.% 235 U) fuel PNL-1, 2, 3, 4, 5 Five unreflected spheres of plutonium nitrate solution with hydrogen/ 239 Pu atom ratios ranging from 131 to 1204 BAPL-1, 2, 3 H 2 O-moderated, fully reflected simple assemblies operated at room temperature with high-density UO 2 (1.3 wt.% 235 U) fuel
The diffusion and activation of n-type impurities (P and As) implanted into p-type Ge(100) substr... more The diffusion and activation of n-type impurities (P and As) implanted into p-type Ge(100) substrates were examined under various dose and annealing conditions. The secondary ion mass spectrometry profiles of chemical concentrations indicated the existence of a sufficiently high number of impurities with increasing implanted doses. However, spreading resistance probe profiles of electrical concentrations showed electrical concentration saturation in spite of increasing doses and indicated poor activation of As relative to P in Ge. The relationships between the chemical and electrical concentrations of P in Ge and Si were calculated, taking into account the effect of incomplete ionization. The results indicated that the activation of P was almost the same in Ge and Si. The activation ratios obtained experimentally were similar to the calculated values, implying insufficient degeneration of Ge. The profiles of P in Ge substrates with and without damage generated by Ge ion implantation...
The dielectric properties of noncrystalline hafnium silicon oxynitride (HfSiON) films with a vari... more The dielectric properties of noncrystalline hafnium silicon oxynitride (HfSiON) films with a variety of atomic compositions were investigated. The films were deposited by reactive sputtering of Hf and Si in an O, N, and Ar mixture ambient. The bonding states, band-gap energies, atomic compositions, and crystallinities were confirmed by X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS), Rutherford backscattering spectrometry (RBS), and X-ray diffractometry (XRD), respectively. The optical (high-frequency) dielectric constants were optically determined by the square of the reflective indexes measured by ellipsometry. The static dielectric constants were electrically estimated by the capacitance of Au/HfSiON/Si(100) structures. It was observed that low N incorporation in the films led to the formation of only Si-N bonds without Hf-N bonds. An abrupt decrease in band-gap energies was observed at atomic compositions corresponding to the boundary...
The electric and structural properties of hafnium silicon oxynitride (HfSiON) with high Hf/(Hf+Si... more The electric and structural properties of hafnium silicon oxynitride (HfSiON) with high Hf/(Hf+Si) (35∼100%) were investigated, focusing on the role of Hf-N bonds inside the material. The results show that the existence of Hf-N bonds in the films result in a high dielectric constant and high thermal stability. Using ultra-thin HfSiON with high Hf and high N concentrations, thermally stable amorphous high-k stacks with EOT of 0.6 nm and with 10-5 times Jg reduction, relative to that in SiO2 was obtained.
2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.
ABSTRACT The influence of the unavoidable high temperature annealing in the MIS fabrication proce... more ABSTRACT The influence of the unavoidable high temperature annealing in the MIS fabrication process on the reliability characteristics of high-k gate dielectrics are thoroughly investigated. In particular, the Qbd distributions are drastically degraded after high temperature annealing in Hf-silicate dielectrics. We propose a novel dielectric breakdown model of high-k gate dielectrics, which may be responsible for the poor Qbd distributions.
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
ABSTRACT Ge diffusion into high-k layer is completely suppressed by taking advantage of thermally... more ABSTRACT Ge diffusion into high-k layer is completely suppressed by taking advantage of thermally stable Zr-silicate/Ge structure. This leads to high muh of 210 cm 2/Vsec at 0.1M V/cm, which is two times higher than that of ZrO2/Ge and even 23% higher than the value for Si universal curve. EOT scalability of Zr-silicate/Ge gate stacks is comparable to that of ZrO2/Ge one
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
ABSTRACT Impact of implementation of HfSiON as a gate dielectric on sub-100 nm generation CMOSFET... more ABSTRACT Impact of implementation of HfSiON as a gate dielectric on sub-100 nm generation CMOSFET is reviewed. It is revealed that most parameters are affected when HfSiON with high Hf concentration is used, and thus, careful re-engineering is indispensable. We demonstrate HfSiON-CMOSFET for hp 65 nm LSTP application which meets the specification of ITRS roadmap by an adequate re-engineering
The Japan Society of Applied Physics, 2016
The Japan Society of Applied Physics, 2019
The Japan Society of Applied Physics, 2019
The Japan Society of Applied Physics, 2015
2016 IEEE Symposium on VLSI Technology
We demonstrate, for the first time, a CMOS compatible ferroelectric HfO2-based two-terminal non-v... more We demonstrate, for the first time, a CMOS compatible ferroelectric HfO2-based two-terminal non-volatile resistive switch; HfO2 ferroelectric tunnel junction (FTJ). The device has characteristics of nA-range operation current, self-compliance, and intrinsic diode properties, as well as good device to device uniformity. Simultaneous achievement of these characteristics, which was not reported in the other two-terminal emerging memories, is significant advantage for future non-volatile applications. Accurate understanding of switching mechanism based on first-principles calculations and material characterization enabled us to establish a solid guideline for performance improvement: scaling of both ferroelectric layer and interfacial layer thickness. As a consequence, reduction of operation voltage while maintaining sufficient ON/OFF ratio was successfully demonstrated.
2018 IEEE International Reliability Physics Symposium (IRPS)
We conducted a detailed investigation on failure mechanisms for the HfÖ2-based ferroelectric tunn... more We conducted a detailed investigation on failure mechanisms for the HfÖ2-based ferroelectric tunnel junction (FTJ) memory during set/reset cycling endurance by combining methodology of the well-known reliability evaluation (time-dependent dielectric breakdown (TDDB)) and the memory-specific evaluation (cycling endurance). As a consequence, we clarify that an increase of stress induced leakage current (SILC) after cycling is the main cause of the failure and demonstrate the cycling endurance enhancement by suppressing the SILC with optimizing the measurement sequence. Based on these results, we show a potential to achieve 106 cycles.
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, 2005
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, 2003
Digest. International Electron Devices Meeting,
parameters of the nuclear reactor system such as measurements of reactivity, reaction rates, buck... more parameters of the nuclear reactor system such as measurements of reactivity, reaction rates, buckling, flux distribution, reactivity coefficients, and fuel burnup. 2.1 Cross Section Evaluation Working Group The Cross Section Evaluation Working Group (CSEWG) was organized in 1966 and is now a cooperative effort of the national laboratories, industry, and universities in the United States (US) and Canada. The main mission of the CSEWG is to produce the US Evaluated Nuclear Data File (ENDF), which has been adopted as the international standard in 2001 (CSEWG, 2010). The CSEWG community has utilized integral experiment results as a mechanism for validating ENDF/B data files. In 1973, the CSEWG community has compiled 25 fast reactor and 36 thermal reactor benchmark problems, of which examples are given below (Alter et al., 1974). JEZEBEL Bare sphere of plutonium especially suited for testing the plutonium cross sections in the fission source energy range GODIVA Bare sphere of enriched uranium especially suited for testing 235 U and 238 U cross sections in the fission source energy range TRX-1, 2, 3, 4 H 2 O-moderated, fully reflected simple assemblies operated at room temperature with uranium metal (1.3 wt.% 235 U) fuel PNL-1, 2, 3, 4, 5 Five unreflected spheres of plutonium nitrate solution with hydrogen/ 239 Pu atom ratios ranging from 131 to 1204 BAPL-1, 2, 3 H 2 O-moderated, fully reflected simple assemblies operated at room temperature with high-density UO 2 (1.3 wt.% 235 U) fuel
The diffusion and activation of n-type impurities (P and As) implanted into p-type Ge(100) substr... more The diffusion and activation of n-type impurities (P and As) implanted into p-type Ge(100) substrates were examined under various dose and annealing conditions. The secondary ion mass spectrometry profiles of chemical concentrations indicated the existence of a sufficiently high number of impurities with increasing implanted doses. However, spreading resistance probe profiles of electrical concentrations showed electrical concentration saturation in spite of increasing doses and indicated poor activation of As relative to P in Ge. The relationships between the chemical and electrical concentrations of P in Ge and Si were calculated, taking into account the effect of incomplete ionization. The results indicated that the activation of P was almost the same in Ge and Si. The activation ratios obtained experimentally were similar to the calculated values, implying insufficient degeneration of Ge. The profiles of P in Ge substrates with and without damage generated by Ge ion implantation...
The dielectric properties of noncrystalline hafnium silicon oxynitride (HfSiON) films with a vari... more The dielectric properties of noncrystalline hafnium silicon oxynitride (HfSiON) films with a variety of atomic compositions were investigated. The films were deposited by reactive sputtering of Hf and Si in an O, N, and Ar mixture ambient. The bonding states, band-gap energies, atomic compositions, and crystallinities were confirmed by X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS), Rutherford backscattering spectrometry (RBS), and X-ray diffractometry (XRD), respectively. The optical (high-frequency) dielectric constants were optically determined by the square of the reflective indexes measured by ellipsometry. The static dielectric constants were electrically estimated by the capacitance of Au/HfSiON/Si(100) structures. It was observed that low N incorporation in the films led to the formation of only Si-N bonds without Hf-N bonds. An abrupt decrease in band-gap energies was observed at atomic compositions corresponding to the boundary...
The electric and structural properties of hafnium silicon oxynitride (HfSiON) with high Hf/(Hf+Si... more The electric and structural properties of hafnium silicon oxynitride (HfSiON) with high Hf/(Hf+Si) (35∼100%) were investigated, focusing on the role of Hf-N bonds inside the material. The results show that the existence of Hf-N bonds in the films result in a high dielectric constant and high thermal stability. Using ultra-thin HfSiON with high Hf and high N concentrations, thermally stable amorphous high-k stacks with EOT of 0.6 nm and with 10-5 times Jg reduction, relative to that in SiO2 was obtained.
2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.
ABSTRACT The influence of the unavoidable high temperature annealing in the MIS fabrication proce... more ABSTRACT The influence of the unavoidable high temperature annealing in the MIS fabrication process on the reliability characteristics of high-k gate dielectrics are thoroughly investigated. In particular, the Qbd distributions are drastically degraded after high temperature annealing in Hf-silicate dielectrics. We propose a novel dielectric breakdown model of high-k gate dielectrics, which may be responsible for the poor Qbd distributions.
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
ABSTRACT Ge diffusion into high-k layer is completely suppressed by taking advantage of thermally... more ABSTRACT Ge diffusion into high-k layer is completely suppressed by taking advantage of thermally stable Zr-silicate/Ge structure. This leads to high muh of 210 cm 2/Vsec at 0.1M V/cm, which is two times higher than that of ZrO2/Ge and even 23% higher than the value for Si universal curve. EOT scalability of Zr-silicate/Ge gate stacks is comparable to that of ZrO2/Ge one
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
ABSTRACT Impact of implementation of HfSiON as a gate dielectric on sub-100 nm generation CMOSFET... more ABSTRACT Impact of implementation of HfSiON as a gate dielectric on sub-100 nm generation CMOSFET is reviewed. It is revealed that most parameters are affected when HfSiON with high Hf concentration is used, and thus, careful re-engineering is indispensable. We demonstrate HfSiON-CMOSFET for hp 65 nm LSTP application which meets the specification of ITRS roadmap by an adequate re-engineering
The Japan Society of Applied Physics, 2016
The Japan Society of Applied Physics, 2019
The Japan Society of Applied Physics, 2019
The Japan Society of Applied Physics, 2015
2016 IEEE Symposium on VLSI Technology
We demonstrate, for the first time, a CMOS compatible ferroelectric HfO2-based two-terminal non-v... more We demonstrate, for the first time, a CMOS compatible ferroelectric HfO2-based two-terminal non-volatile resistive switch; HfO2 ferroelectric tunnel junction (FTJ). The device has characteristics of nA-range operation current, self-compliance, and intrinsic diode properties, as well as good device to device uniformity. Simultaneous achievement of these characteristics, which was not reported in the other two-terminal emerging memories, is significant advantage for future non-volatile applications. Accurate understanding of switching mechanism based on first-principles calculations and material characterization enabled us to establish a solid guideline for performance improvement: scaling of both ferroelectric layer and interfacial layer thickness. As a consequence, reduction of operation voltage while maintaining sufficient ON/OFF ratio was successfully demonstrated.
2018 IEEE International Reliability Physics Symposium (IRPS)
We conducted a detailed investigation on failure mechanisms for the HfÖ2-based ferroelectric tunn... more We conducted a detailed investigation on failure mechanisms for the HfÖ2-based ferroelectric tunnel junction (FTJ) memory during set/reset cycling endurance by combining methodology of the well-known reliability evaluation (time-dependent dielectric breakdown (TDDB)) and the memory-specific evaluation (cycling endurance). As a consequence, we clarify that an increase of stress induced leakage current (SILC) after cycling is the main cause of the failure and demonstrate the cycling endurance enhancement by suppressing the SILC with optimizing the measurement sequence. Based on these results, we show a potential to achieve 106 cycles.
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, 2005
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, 2003