Werner Metz - Academia.edu (original) (raw)
Papers by Werner Metz
Acta Oto-laryngologica, 1977
A new air caloric testing method is described in which the temperature of a continuous aural irri... more A new air caloric testing method is described in which the temperature of a continuous aural irrigation is switched between hot and cold values at times calculated to control the intensity of the resulting vestibular stimulation. Applications of low or high caloric stimulus intensities to normal subjects were well tolerated and reliably produced appropriate low or high intensity nystagmic responses. Nystagmus intensity values obtained from this study were compared with predicted intensity values from a computerized simulation of the actual test conditions, and also with values obtained when using biphasic water irrigations. As a result, further improvements in our methodology have been effected.
1985 Symposium on VLSI Technology. Digest of Technical Papers, 1985
It is widely recognized that a serious limit on VLSI circuit performance is imposed by the interc... more It is widely recognized that a serious limit on VLSI circuit performance is imposed by the interconnect. As interconnect resistance does not scale "properly" with reductions in geometry, an increasing proportion of the total propagation delay is due to the interconnect, 1 Two critical components of interconnect resistance which must be addressed are the intrinsic resistance of the gate level metallization and the contact resistance of the subsequent layers of metal to heavily doped silicon. Selectively deposited tungsten as a polysilicon shunt or contact barrier will reduce the interconnect resistance. It is the purpose of this work to establish that selective tungsten provides a viable, manufacturable solution to the problems of VLSI interconnect. The selective tungsten deposition was done in a commercial bell jar type system, The tungsten is deposited selectively in a LPCVD reaction between WF6, H2 and exposed silicon surfaces; no deposition occurs on oxide surfaces. A t...
Nuclear Instruments and Methods in Physics Research, 1982
Abstract Sequential implantation of C + and N + ions into KCl is shown to result in formation of ... more Abstract Sequential implantation of C + and N + ions into KCl is shown to result in formation of CN − radicals. Detection of the CN − is by the characteristic optical emission of that molecule when the implanted crystal is bombarded by He + . The quantity of CN − formed has been studied as a function of energy of the implanted species (20 to 200 keV) and as a function of dose. The results are consistent with a model where an incoming ion A, slowed to rest, causes a localized melting region of volume ΔV and if a previously implanted species B is already present in this volume then the molecule AB is formed by recombination. The molecule adopts a cation lattice site after recrystallization. The localized melting volume corresponds to a region of radius 9.3 A which is roughly consistent with unpublished molecular dynamics calculations.
Nuclear Instruments and Methods, 1980
The Auger electron spectra induced by 20-200 keV Ar + ion impact on A1 and Fe are examined and th... more The Auger electron spectra induced by 20-200 keV Ar + ion impact on A1 and Fe are examined and the spectral lines identified. For A1 the spectrum is due to sputtered A1 and AI + with one or two vacancies in the 2p shell. For Fe there are Doppler broadened lines from Ar plus subsidiary structure from interatomic transitions.
International Conference on Consumer Electronics, 1998
Ion Beam Analysis, 1980
Auger electron spectra are induced by impact of heavy ions (e.g. Ar +) on surfaces; it has been s... more Auger electron spectra are induced by impact of heavy ions (e.g. Ar +) on surfaces; it has been suggested that analysis of such spectra would be a useful technique for surface analysis. We have examined the Auger spectra for various projectile-target combinations and present as representative data the spectra for 100 keV Ar + impact on AI, Cr, Mn, Fe and Co. For a projectile incident on a species of higher nuclear charge the spectrum is dominated by Auger lines from the projectile, broadened considerably by the Doppler effect due to the projectile's motion. The spectra are not characteristic of the target and therefore offer no opportunity for surface analysis. For a projectile incident on a target of lower nuclear charge the spectrum is that of the target species but the spectrum is consistent with the source being sputtered excited atoms; the Auger electrons do not come from the surface. We conclude that the ion induced Auger spectra are in general not a convenient method for surface analysis.
Journal of Applied Physics, 1982
It is shown that the sequential implantation of 20–200 keV C+ and N+ ions into a KCl crystal give... more It is shown that the sequential implantation of 20–200 keV C+ and N+ ions into a KCl crystal gives rise to formation of the CN− molecular configuration. Detection of the CN− is by the characteristic luminescence spectrum induced when He+ ions are incident on the implanted target, a technique which represents a direct in situ determination of their presence. It is shown how the ion-induced optical emission may be used to provide a routine relative measurement of the quantity of CN− present. We describe a phenomenological model of the formation process which leads to the conclusion that each incoming ion searches a volume of the target approximately 3.4×10−21 cm3 in extent and has a unit probability of combining with an atom of the other species lying in this region. This model explains why saturation of the CN− density occurs at a N+ dose independent of the quantity of C+ implanted previously.
Journal of Applied Physics, 1980
The production of Auger electrons from Cr, Mn, Fe, and Co by 20–200-keV Ar, 100-keV Kr, and 3-keV... more The production of Auger electrons from Cr, Mn, Fe, and Co by 20–200-keV Ar, 100-keV Kr, and 3-keV electrons has been studied. The metal M23M45M45 and the Argon LMM peaks are clearly identifiable, the latter broadened consistent with electron emission from backscattered Argon ions. Various other features are produced which cannot be due to target or projectile Auger emission. These are believed to result from interatomic transitions between the ions of the beam and those of the target.
Journal of Applied Physics, 1980
The Auger electron spectrum induced by the impact of 100-keV Ar+ on metallic aluminum is shown to... more The Auger electron spectrum induced by the impact of 100-keV Ar+ on metallic aluminum is shown to be consistent with the source of Auger electrons being ejected target particles. The principal spectral line has been identified as being due to ejected Al atoms with a single 2p vacancy. Subsidiary peaks are due to ejected atoms and Al+ ions with one or two 2p vacancies. The ion-induced Auger spectrum of silicon is similar. By contrast the spectrum induced by Ar+ impact on Be exhibits a rather broad peak characteristic of a K-shell vacancy and is similar to that induced by the impact of electrons. By considering the lifetime of the Be K-shell vacancy we conclude that the Auger decay occurs while the Be atoms are either in the solid or interacting with the surface.
Applied Physics Letters, 1984
Tungsten thin films were selectively deposited onto silicon surfaces by a low pressure chemical v... more Tungsten thin films were selectively deposited onto silicon surfaces by a low pressure chemical vapor deposition process utilizing, sequentially, silicon reduction and then hydrogen reduction of WF6. Surface selectivity and conformal coverage of microelectronic structures is demonstrated. X-ray diffraction and Auger analysis indicate the films are well crystallized, with the possibility of a fraction of a percent oxygen content. The room-temperature resistivity is ∼18 μΩ cm, composed of residual and intrinsic contributions of 12 and 6 μΩ cm, respectively. The Hall effect indicates the material is predominantly a hole conductor, with a relatively low Hall mobility that is consistent with the large residual resistivity. Difficulties with a simple interpretation of the Hall effect are discussed.
Transactions. Section on Otolaryngology. American Academy of Ophthalmology and Otolaryngology
ABSTRACT A cost effective digital image capture apparatus such as a digital camera that operates ... more ABSTRACT A cost effective digital image capture apparatus such as a digital camera that operates in both still mode and video mode, using a common programmable image processing chain and fixed optics. The full resolution of the image sensor (yielding raw image data) may be used in still mode, with adequate signal-to-noise ratio (SNR) achieved either from the scene ambient lighting or from supplemental light supplied by a strobe. In video mode, the apparatus may be configured to capture video image data by programming the parameters for image processing methodologies such as scaling, decorrelation, and encoding into a look-up table (LUT) which in turn configures logic circuitry to spatially scale and compress if necessary the raw image data in order to meet storage and transmission bandwidth constraints for video images. In video mode, adequate SNR may be achieved despite the lower light conditions, encountered, for example, during videoconferencing, by averaging pixels together during scaling.
Recent advances in digital imaging technology combined with the next generation digital wireless ... more Recent advances in digital imaging technology combined with the next generation digital wireless communication has great potential to transform the paradigm for how humans will communicate visual information with one another in the next century. The first major change is that the model of one message from a single source to many clients (mass broadcasting) will be replaced by a model of many messages from multiple sources to many receivers (peer to peer). A second major change is that the model will move from a passive client, which only receives messages to an interactive client able to respond and even direct the information content to itself. This will have great impact in the experience of visual communication in the next decade. In this paper, we shall outline some of the key technological challenges in terms of bandwidth, processing power, data rate, data sizes and human factors required to influence this paradigm shift resulting from the merger of digital imaging and digital ...
Proceedings of Spie the International Society For Optical Engineering, 2008
The end of the performance entitlement historically achieved by classic scaling of CMOS devices i... more The end of the performance entitlement historically achieved by classic scaling of CMOS devices is within sight, driven ultimately by fundamental limits. Performance entitlements predicted by classic CMOS scaling have progressively failed to be realized in recent process generations due to excessive leakage, increasing interconnect delays and scaling of gate dielectrics. Prior to reaching fundamental limits, trends in technology, architecture and economics will pressure the industry to adopt new paradigms. A likely response is to repartition system functions away from digital implementations and into new architectures. Future architectures for visual communications will require extending the implementation into the optical and analog processing domains. The fundamental properties of these domains will in turn give rise to new architectural concepts. The limits of CMOS scaling and impact on architectures will be briefly reviewed. Alternative approaches in the optical, electronic and analog domains will then be examined for advantages, architectural impact and drawbacks.
Thesis Georgia Institute of Technology 1981 Source Dissertation Abstracts International Volume 43 07 Section B Page 2256, 1981
Acta Oto-laryngologica, 1977
A new air caloric testing method is described in which the temperature of a continuous aural irri... more A new air caloric testing method is described in which the temperature of a continuous aural irrigation is switched between hot and cold values at times calculated to control the intensity of the resulting vestibular stimulation. Applications of low or high caloric stimulus intensities to normal subjects were well tolerated and reliably produced appropriate low or high intensity nystagmic responses. Nystagmus intensity values obtained from this study were compared with predicted intensity values from a computerized simulation of the actual test conditions, and also with values obtained when using biphasic water irrigations. As a result, further improvements in our methodology have been effected.
1985 Symposium on VLSI Technology. Digest of Technical Papers, 1985
It is widely recognized that a serious limit on VLSI circuit performance is imposed by the interc... more It is widely recognized that a serious limit on VLSI circuit performance is imposed by the interconnect. As interconnect resistance does not scale "properly" with reductions in geometry, an increasing proportion of the total propagation delay is due to the interconnect, 1 Two critical components of interconnect resistance which must be addressed are the intrinsic resistance of the gate level metallization and the contact resistance of the subsequent layers of metal to heavily doped silicon. Selectively deposited tungsten as a polysilicon shunt or contact barrier will reduce the interconnect resistance. It is the purpose of this work to establish that selective tungsten provides a viable, manufacturable solution to the problems of VLSI interconnect. The selective tungsten deposition was done in a commercial bell jar type system, The tungsten is deposited selectively in a LPCVD reaction between WF6, H2 and exposed silicon surfaces; no deposition occurs on oxide surfaces. A t...
Nuclear Instruments and Methods in Physics Research, 1982
Abstract Sequential implantation of C + and N + ions into KCl is shown to result in formation of ... more Abstract Sequential implantation of C + and N + ions into KCl is shown to result in formation of CN − radicals. Detection of the CN − is by the characteristic optical emission of that molecule when the implanted crystal is bombarded by He + . The quantity of CN − formed has been studied as a function of energy of the implanted species (20 to 200 keV) and as a function of dose. The results are consistent with a model where an incoming ion A, slowed to rest, causes a localized melting region of volume ΔV and if a previously implanted species B is already present in this volume then the molecule AB is formed by recombination. The molecule adopts a cation lattice site after recrystallization. The localized melting volume corresponds to a region of radius 9.3 A which is roughly consistent with unpublished molecular dynamics calculations.
Nuclear Instruments and Methods, 1980
The Auger electron spectra induced by 20-200 keV Ar + ion impact on A1 and Fe are examined and th... more The Auger electron spectra induced by 20-200 keV Ar + ion impact on A1 and Fe are examined and the spectral lines identified. For A1 the spectrum is due to sputtered A1 and AI + with one or two vacancies in the 2p shell. For Fe there are Doppler broadened lines from Ar plus subsidiary structure from interatomic transitions.
International Conference on Consumer Electronics, 1998
Ion Beam Analysis, 1980
Auger electron spectra are induced by impact of heavy ions (e.g. Ar +) on surfaces; it has been s... more Auger electron spectra are induced by impact of heavy ions (e.g. Ar +) on surfaces; it has been suggested that analysis of such spectra would be a useful technique for surface analysis. We have examined the Auger spectra for various projectile-target combinations and present as representative data the spectra for 100 keV Ar + impact on AI, Cr, Mn, Fe and Co. For a projectile incident on a species of higher nuclear charge the spectrum is dominated by Auger lines from the projectile, broadened considerably by the Doppler effect due to the projectile's motion. The spectra are not characteristic of the target and therefore offer no opportunity for surface analysis. For a projectile incident on a target of lower nuclear charge the spectrum is that of the target species but the spectrum is consistent with the source being sputtered excited atoms; the Auger electrons do not come from the surface. We conclude that the ion induced Auger spectra are in general not a convenient method for surface analysis.
Journal of Applied Physics, 1982
It is shown that the sequential implantation of 20–200 keV C+ and N+ ions into a KCl crystal give... more It is shown that the sequential implantation of 20–200 keV C+ and N+ ions into a KCl crystal gives rise to formation of the CN− molecular configuration. Detection of the CN− is by the characteristic luminescence spectrum induced when He+ ions are incident on the implanted target, a technique which represents a direct in situ determination of their presence. It is shown how the ion-induced optical emission may be used to provide a routine relative measurement of the quantity of CN− present. We describe a phenomenological model of the formation process which leads to the conclusion that each incoming ion searches a volume of the target approximately 3.4×10−21 cm3 in extent and has a unit probability of combining with an atom of the other species lying in this region. This model explains why saturation of the CN− density occurs at a N+ dose independent of the quantity of C+ implanted previously.
Journal of Applied Physics, 1980
The production of Auger electrons from Cr, Mn, Fe, and Co by 20–200-keV Ar, 100-keV Kr, and 3-keV... more The production of Auger electrons from Cr, Mn, Fe, and Co by 20–200-keV Ar, 100-keV Kr, and 3-keV electrons has been studied. The metal M23M45M45 and the Argon LMM peaks are clearly identifiable, the latter broadened consistent with electron emission from backscattered Argon ions. Various other features are produced which cannot be due to target or projectile Auger emission. These are believed to result from interatomic transitions between the ions of the beam and those of the target.
Journal of Applied Physics, 1980
The Auger electron spectrum induced by the impact of 100-keV Ar+ on metallic aluminum is shown to... more The Auger electron spectrum induced by the impact of 100-keV Ar+ on metallic aluminum is shown to be consistent with the source of Auger electrons being ejected target particles. The principal spectral line has been identified as being due to ejected Al atoms with a single 2p vacancy. Subsidiary peaks are due to ejected atoms and Al+ ions with one or two 2p vacancies. The ion-induced Auger spectrum of silicon is similar. By contrast the spectrum induced by Ar+ impact on Be exhibits a rather broad peak characteristic of a K-shell vacancy and is similar to that induced by the impact of electrons. By considering the lifetime of the Be K-shell vacancy we conclude that the Auger decay occurs while the Be atoms are either in the solid or interacting with the surface.
Applied Physics Letters, 1984
Tungsten thin films were selectively deposited onto silicon surfaces by a low pressure chemical v... more Tungsten thin films were selectively deposited onto silicon surfaces by a low pressure chemical vapor deposition process utilizing, sequentially, silicon reduction and then hydrogen reduction of WF6. Surface selectivity and conformal coverage of microelectronic structures is demonstrated. X-ray diffraction and Auger analysis indicate the films are well crystallized, with the possibility of a fraction of a percent oxygen content. The room-temperature resistivity is ∼18 μΩ cm, composed of residual and intrinsic contributions of 12 and 6 μΩ cm, respectively. The Hall effect indicates the material is predominantly a hole conductor, with a relatively low Hall mobility that is consistent with the large residual resistivity. Difficulties with a simple interpretation of the Hall effect are discussed.
Transactions. Section on Otolaryngology. American Academy of Ophthalmology and Otolaryngology
ABSTRACT A cost effective digital image capture apparatus such as a digital camera that operates ... more ABSTRACT A cost effective digital image capture apparatus such as a digital camera that operates in both still mode and video mode, using a common programmable image processing chain and fixed optics. The full resolution of the image sensor (yielding raw image data) may be used in still mode, with adequate signal-to-noise ratio (SNR) achieved either from the scene ambient lighting or from supplemental light supplied by a strobe. In video mode, the apparatus may be configured to capture video image data by programming the parameters for image processing methodologies such as scaling, decorrelation, and encoding into a look-up table (LUT) which in turn configures logic circuitry to spatially scale and compress if necessary the raw image data in order to meet storage and transmission bandwidth constraints for video images. In video mode, adequate SNR may be achieved despite the lower light conditions, encountered, for example, during videoconferencing, by averaging pixels together during scaling.
Recent advances in digital imaging technology combined with the next generation digital wireless ... more Recent advances in digital imaging technology combined with the next generation digital wireless communication has great potential to transform the paradigm for how humans will communicate visual information with one another in the next century. The first major change is that the model of one message from a single source to many clients (mass broadcasting) will be replaced by a model of many messages from multiple sources to many receivers (peer to peer). A second major change is that the model will move from a passive client, which only receives messages to an interactive client able to respond and even direct the information content to itself. This will have great impact in the experience of visual communication in the next decade. In this paper, we shall outline some of the key technological challenges in terms of bandwidth, processing power, data rate, data sizes and human factors required to influence this paradigm shift resulting from the merger of digital imaging and digital ...
Proceedings of Spie the International Society For Optical Engineering, 2008
The end of the performance entitlement historically achieved by classic scaling of CMOS devices i... more The end of the performance entitlement historically achieved by classic scaling of CMOS devices is within sight, driven ultimately by fundamental limits. Performance entitlements predicted by classic CMOS scaling have progressively failed to be realized in recent process generations due to excessive leakage, increasing interconnect delays and scaling of gate dielectrics. Prior to reaching fundamental limits, trends in technology, architecture and economics will pressure the industry to adopt new paradigms. A likely response is to repartition system functions away from digital implementations and into new architectures. Future architectures for visual communications will require extending the implementation into the optical and analog processing domains. The fundamental properties of these domains will in turn give rise to new architectural concepts. The limits of CMOS scaling and impact on architectures will be briefly reviewed. Alternative approaches in the optical, electronic and analog domains will then be examined for advantages, architectural impact and drawbacks.
Thesis Georgia Institute of Technology 1981 Source Dissertation Abstracts International Volume 43 07 Section B Page 2256, 1981