Ming Chang Shih | National University of Kaohsiung (original) (raw)

Papers by Ming Chang Shih

Optics Communications, 2000

Picosecond pulsed-signal operation for ecient self-and cross-switching in an all-semiconductor-op... more Picosecond pulsed-signal operation for ecient self-and cross-switching in an all-semiconductor-optical-ampli®er loop device was implemented. Although the con®guration of the device is similar to a conventional nonlinear optical loop mirror, the operation principles are quite dierent. For cw signals, the device operation relies on the nonlinear coupling eect in a multi-mode interference waveguide ampli®er and the lateral ®eld redistribution and ampli®cation by the active loop. However, for pulsed signals the crucial factor of asymmetric gain distribution in the loop needs to be added for the device operation. The pump±probe experiments provided ecient cross-switching results and indicated that GHz-range operation is feasible by redesigning the device con®guration for pump signal injection.

IEEE Photonics Technology Letters, 1999

An all-semiconductor-optical-amplifier loop device with a multimode interference (MMI) coupler wa... more An all-semiconductor-optical-amplifier loop device with a multimode interference (MMI) coupler was fabricated with the deep UV cryo-etching technique. Efficient power-dependent switching was observed. With continuous-wave signals, nonlinear switching occurred due to the combined effect of the nonlinear coupling in the MMI coupler and the lateral wave field redistribution caused by the loop structure. Simulation results showed good agreement in trend with the experimental data.

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, 2013

We demonstrate the fabrication of a Si based metal insulator semiconductor (MIS) photo-detector w... more We demonstrate the fabrication of a Si based metal insulator semiconductor (MIS) photo-detector with multi-dielectric-layers of SiO 2 /TiO 2 and its characteristics of photo-responsivity. Spectral responsivity as high as 0.3 A/W had been achieved at wavelength beyond 850 nm with high spectral discrimination against visible light. In addition, current-voltage (I-V) and optical reflectivity measurements of the multi-dielectric MIS device were applied to explore photo-excited carrier transportation mechanism of the device.

Modern Physics Letters B, 2021

Novel composites operating in visible light (VL) energy are an important issue in photon excited ... more Novel composites operating in visible light (VL) energy are an important issue in photon excited system. The (Bi2MoO6, MoO3)/SnO[Formula: see text]:N composite photocatalysts were prepared by the one-step spray pyrolysis method. The effect of N-doping in SnO[Formula: see text] layer with controlled N/Sn ratio in precursor to the photocatalystic ability of the composite was studied. The photocatalytic ability of the composites was evaluated by photodegradation of Rhodamine B (RhB) under visible-light emitting diode illumination. The composites were characterized by film optical absorption analysis, X-ray diffraction and scanning electron microscopy. Film with suitable N-doping shows the improved visible-light photocatalytic ability with rate constant 0.019 min[Formula: see text]. With the electrical property of SnO[Formula: see text]:N films and the scavenger analysis of the composites, the photocatalytic mechanism was discussed.

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, 2011

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, 2011

Journal of Nanomaterials, 2013

ZnO thin film was fabricated by thermally oxidized Zn at 600°C for 1 h. A surface containing nano... more ZnO thin film was fabricated by thermally oxidized Zn at 600°C for 1 h. A surface containing nanostructured dumbbell and lines was observed by scanning electron microscope (SEM). The ZnO resistor device was formed after the following Ti/Au metallization. The device resistance was characterized at different oxygen pressure environment in the dark and under ultraviolet (UV) light illumination coming from the mercury lamp with a short pass filter. The resistance increases with the increase of oxygen pressure. The resistance decreases and response increases with the increase of light intensity. Models considering the barrier height variation caused by the adsorbed oxygen related species were used to explain these results. The UV light illumination technology shows an effective method to enhance the detection response for this ZnO resistor oxygen sensor.

Japanese Journal of Applied Physics, 2013

Boron-doped zinc oxide (BZO) thin films have been fabricated by spray pyrolysis on a glass substr... more Boron-doped zinc oxide (BZO) thin films have been fabricated by spray pyrolysis on a glass substrate. The morphology and electrical properties of the thin films were investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were performed. It was found that [B]/[Zn] ratio altered both the microstructure and concentration of the BZO thin films. The film grain size was reduced by increasing the [B]/[Zn] ratio. The highest Hall mobility was 3.65 cm2 V-1 s-1 for the undoped ZnO thin film, and the highest carrier concentration of 1.0×1019 cm-3 was achieved for the as-deposited BZO thin film with [B]/[Zn] = 1.5 at. %. Conductivity was determined at different measurement temperatures and shallow donors provided the dominate conduction mechanism for the as-deposited BZO thin films. After 600 °C annealing, shallow level reduction and donors with a high activation energy of 129±6 meV in the BZO thin films were characterized, and the shallow donors that dominate the...

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, 2013

We demonstrated output switching of the semiconductor circular ring laser diode (SCRLD) between t... more We demonstrated output switching of the semiconductor circular ring laser diode (SCRLD) between two Y-junction couplers. The generation of solitons guiding wave can affect coupling between ring resonator and the Y-junction coupler. Measurements of Light-current (L-I) and spectral analysis are used to explore the mechanism of output modes switching in the SCRLD device.

Applied Surface Science, 2008

We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and... more We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and the study of the effects of substrate temperature and laser fluences. Deposition rate of AlN thin film at 0.3Å/pulse has been achieved with laser fluence of 1500mJ/cm2 and at substrate temperature of 250K, and this shows the enhancement of the deposition rate at low substrate temperature. Surface morphology of the deposited films is characterized by atomic force microscopy (AFM). In addition, the electrical performance of the MIS devices with AlN thin films prepared in this experiment has been characterized.

Abstract : We have studied the UV laser-induced interaction of molecular chlorine with a GaAs(110... more Abstract : We have studied the UV laser-induced interaction of molecular chlorine with a GaAs(110) surface under ultra-high vacuum (UHV) conditions. Unlike previous studies of this system, we concentrated on well-defined surfaces, known coverages and low laser fluences. The experimental setup included a low energy electron diffraction apparatus, an Auger electron spectrometer and a differentially pumped mass spectrometer for thermal desorption spectra (TDS) and time-of-flight (TOF) measurements. Without illumination, chlorine was found to adsorb molecularly and dissociatively on n-GaAs(110) surfaces at 85 K. The laser experiments were done with a 193- and 351-nm excimer laser, at fluences below 5 mJ/cm2. Illumination of a molecular chlorine-covered surface at 85 K with 193 nm excimer laser radiation led to the formation of AsCI3, which desorbed at 180 K. Illumination with 351-nm radiation resulted in the formation of smaller amounts of arsenic chloride on the surface.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005

Fabrication of an AlGaInP multiple The ring laser has a circular ridge-waveguide resonator of qua... more Fabrication of an AlGaInP multiple The ring laser has a circular ridge-waveguide resonator of quantum well semiconductor with a circular ridge 100 pim in diameter and 10 m in width, and a 10O ,um

SPIE Proceedings, 2006

Wavelength locking of double FBG and its applications in fiber sensing system Ming Chang Shih*a, ... more Wavelength locking of double FBG and its applications in fiber sensing system Ming Chang Shih*a, Shieh Yueh Yangb, Yi Shen Chena, Yi Tung Shiua, Yi Chiun ... [9] W. Jin, Y. Zhou, PKCChan, HG Xu, “A fibre-optic grating sensor for the study of flow-induced vibrations”, Sens. ...

The Journal of Clinical Endocrinology & Metabolism, 2006

Context: The impact of different types of luteal phase support on endometrial receptivity after o... more Context: The impact of different types of luteal phase support on endometrial receptivity after ovarian stimulation has not been investigated. Objective: Our objective was to evaluate the impact of different luteal-phase support protocols on sex steroid levels and on endometrial expression of L-selectin ligand after ovarian hyperstimulation with a GnRH antagonist protocol. Patients and Design: Seventeen oocyte donors who underwent ovarian stimulation with a recombinant FSH/ganirelix acetate protocol were randomized into three groups: group I had no luteal-phase support; group II had luteal support with micronized progesterone; and group III had luteal support with progesterone plus 17␤-estradiol. All donors had endometrial biopsies on the day of retrieval, and then 3, 5, and 10 d after retrieval. In addition, they had serum estradiol and progesterone measurements on d 3, 5, and 10. Main Outcome Measures: Endometrial L-selectin ligand expression was detected by immunohistochemical staining in the luminal and glandular epithelium. A histological score was used for the quantification of the immunostaining. Sex steroid levels were measured during the luteal phase. Results: By d 10 after retrieval, there was a significant decrease in mean progesterone levels in group I compared with the other two groups that may reflect the expected demise of the corpus luteum. There was also a significant increase in the presence of L-selectin ligands in the luminal epithelium in group III. Conclusions: During controlled ovarian stimulation with a GnRH antagonist protocol, luteal-phase support with micronized progesterone and 17␤-estradiol seem to increase endometrial L-selectin ligand expression in the luminal endothelium.

Japanese Journal of Applied Physics, 2008

We present the fabrication of an InGaAlP multiple-quantum-well semiconductor laser with a ridge w... more We present the fabrication of an InGaAlP multiple-quantum-well semiconductor laser with a ridge waveguide circular ring resonator using novel UV-laser-assisted etching at a cryogenic substrate temperature of À130 C. For a circular ring laser with a 250-mm-radius circular resonator and a 500 mm Y-junction output coupling section, the light-intensity measurement shows a threshold current of 600 mA with an output power of 2.0 mW by pulse mode current injection at 10 kHz. The spectral characterization shows a lasing wavelength centered at 658.2 nm and a side mode rejection ratio as high as 5 dB.

Applied Surface Science, 2008

We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and... more We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and the study of the effects of substrate temperature and laser fluences. Deposition rate of AlN thin film at 0.3Å/pulse has been achieved with laser fluence of 1500mJ/cm2 and at substrate temperature of 250K, and this shows the enhancement of the deposition rate at low substrate temperature. Surface morphology of the deposited films is characterized by atomic force microscopy (AFM). In addition, the electrical performance of the MIS devices with AlN thin films prepared in this experiment has been characterized.

Optics Communications, 2000

Picosecond pulsed-signal operation for ecient self-and cross-switching in an all-semiconductor-op... more Picosecond pulsed-signal operation for ecient self-and cross-switching in an all-semiconductor-optical-ampli®er loop device was implemented. Although the con®guration of the device is similar to a conventional nonlinear optical loop mirror, the operation principles are quite dierent. For cw signals, the device operation relies on the nonlinear coupling eect in a multi-mode interference waveguide ampli®er and the lateral ®eld redistribution and ampli®cation by the active loop. However, for pulsed signals the crucial factor of asymmetric gain distribution in the loop needs to be added for the device operation. The pump±probe experiments provided ecient cross-switching results and indicated that GHz-range operation is feasible by redesigning the device con®guration for pump signal injection.

IEEE Photonics Technology Letters, 1999

An all-semiconductor-optical-amplifier loop device with a multimode interference (MMI) coupler wa... more An all-semiconductor-optical-amplifier loop device with a multimode interference (MMI) coupler was fabricated with the deep UV cryo-etching technique. Efficient power-dependent switching was observed. With continuous-wave signals, nonlinear switching occurred due to the combined effect of the nonlinear coupling in the MMI coupler and the lateral wave field redistribution caused by the loop structure. Simulation results showed good agreement in trend with the experimental data.

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, 2013

We demonstrate the fabrication of a Si based metal insulator semiconductor (MIS) photo-detector w... more We demonstrate the fabrication of a Si based metal insulator semiconductor (MIS) photo-detector with multi-dielectric-layers of SiO 2 /TiO 2 and its characteristics of photo-responsivity. Spectral responsivity as high as 0.3 A/W had been achieved at wavelength beyond 850 nm with high spectral discrimination against visible light. In addition, current-voltage (I-V) and optical reflectivity measurements of the multi-dielectric MIS device were applied to explore photo-excited carrier transportation mechanism of the device.

Modern Physics Letters B, 2021

Novel composites operating in visible light (VL) energy are an important issue in photon excited ... more Novel composites operating in visible light (VL) energy are an important issue in photon excited system. The (Bi2MoO6, MoO3)/SnO[Formula: see text]:N composite photocatalysts were prepared by the one-step spray pyrolysis method. The effect of N-doping in SnO[Formula: see text] layer with controlled N/Sn ratio in precursor to the photocatalystic ability of the composite was studied. The photocatalytic ability of the composites was evaluated by photodegradation of Rhodamine B (RhB) under visible-light emitting diode illumination. The composites were characterized by film optical absorption analysis, X-ray diffraction and scanning electron microscopy. Film with suitable N-doping shows the improved visible-light photocatalytic ability with rate constant 0.019 min[Formula: see text]. With the electrical property of SnO[Formula: see text]:N films and the scavenger analysis of the composites, the photocatalytic mechanism was discussed.

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, 2011

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, 2011

Journal of Nanomaterials, 2013

ZnO thin film was fabricated by thermally oxidized Zn at 600°C for 1 h. A surface containing nano... more ZnO thin film was fabricated by thermally oxidized Zn at 600°C for 1 h. A surface containing nanostructured dumbbell and lines was observed by scanning electron microscope (SEM). The ZnO resistor device was formed after the following Ti/Au metallization. The device resistance was characterized at different oxygen pressure environment in the dark and under ultraviolet (UV) light illumination coming from the mercury lamp with a short pass filter. The resistance increases with the increase of oxygen pressure. The resistance decreases and response increases with the increase of light intensity. Models considering the barrier height variation caused by the adsorbed oxygen related species were used to explain these results. The UV light illumination technology shows an effective method to enhance the detection response for this ZnO resistor oxygen sensor.

Japanese Journal of Applied Physics, 2013

Boron-doped zinc oxide (BZO) thin films have been fabricated by spray pyrolysis on a glass substr... more Boron-doped zinc oxide (BZO) thin films have been fabricated by spray pyrolysis on a glass substrate. The morphology and electrical properties of the thin films were investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were performed. It was found that [B]/[Zn] ratio altered both the microstructure and concentration of the BZO thin films. The film grain size was reduced by increasing the [B]/[Zn] ratio. The highest Hall mobility was 3.65 cm2 V-1 s-1 for the undoped ZnO thin film, and the highest carrier concentration of 1.0×1019 cm-3 was achieved for the as-deposited BZO thin film with [B]/[Zn] = 1.5 at. %. Conductivity was determined at different measurement temperatures and shallow donors provided the dominate conduction mechanism for the as-deposited BZO thin films. After 600 °C annealing, shallow level reduction and donors with a high activation energy of 129±6 meV in the BZO thin films were characterized, and the shallow donors that dominate the...

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, 2013

We demonstrated output switching of the semiconductor circular ring laser diode (SCRLD) between t... more We demonstrated output switching of the semiconductor circular ring laser diode (SCRLD) between two Y-junction couplers. The generation of solitons guiding wave can affect coupling between ring resonator and the Y-junction coupler. Measurements of Light-current (L-I) and spectral analysis are used to explore the mechanism of output modes switching in the SCRLD device.

Applied Surface Science, 2008

We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and... more We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and the study of the effects of substrate temperature and laser fluences. Deposition rate of AlN thin film at 0.3Å/pulse has been achieved with laser fluence of 1500mJ/cm2 and at substrate temperature of 250K, and this shows the enhancement of the deposition rate at low substrate temperature. Surface morphology of the deposited films is characterized by atomic force microscopy (AFM). In addition, the electrical performance of the MIS devices with AlN thin films prepared in this experiment has been characterized.

Abstract : We have studied the UV laser-induced interaction of molecular chlorine with a GaAs(110... more Abstract : We have studied the UV laser-induced interaction of molecular chlorine with a GaAs(110) surface under ultra-high vacuum (UHV) conditions. Unlike previous studies of this system, we concentrated on well-defined surfaces, known coverages and low laser fluences. The experimental setup included a low energy electron diffraction apparatus, an Auger electron spectrometer and a differentially pumped mass spectrometer for thermal desorption spectra (TDS) and time-of-flight (TOF) measurements. Without illumination, chlorine was found to adsorb molecularly and dissociatively on n-GaAs(110) surfaces at 85 K. The laser experiments were done with a 193- and 351-nm excimer laser, at fluences below 5 mJ/cm2. Illumination of a molecular chlorine-covered surface at 85 K with 193 nm excimer laser radiation led to the formation of AsCI3, which desorbed at 180 K. Illumination with 351-nm radiation resulted in the formation of smaller amounts of arsenic chloride on the surface.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005

Fabrication of an AlGaInP multiple The ring laser has a circular ridge-waveguide resonator of qua... more Fabrication of an AlGaInP multiple The ring laser has a circular ridge-waveguide resonator of quantum well semiconductor with a circular ridge 100 pim in diameter and 10 m in width, and a 10O ,um

SPIE Proceedings, 2006

Wavelength locking of double FBG and its applications in fiber sensing system Ming Chang Shih*a, ... more Wavelength locking of double FBG and its applications in fiber sensing system Ming Chang Shih*a, Shieh Yueh Yangb, Yi Shen Chena, Yi Tung Shiua, Yi Chiun ... [9] W. Jin, Y. Zhou, PKCChan, HG Xu, “A fibre-optic grating sensor for the study of flow-induced vibrations”, Sens. ...

The Journal of Clinical Endocrinology & Metabolism, 2006

Context: The impact of different types of luteal phase support on endometrial receptivity after o... more Context: The impact of different types of luteal phase support on endometrial receptivity after ovarian stimulation has not been investigated. Objective: Our objective was to evaluate the impact of different luteal-phase support protocols on sex steroid levels and on endometrial expression of L-selectin ligand after ovarian hyperstimulation with a GnRH antagonist protocol. Patients and Design: Seventeen oocyte donors who underwent ovarian stimulation with a recombinant FSH/ganirelix acetate protocol were randomized into three groups: group I had no luteal-phase support; group II had luteal support with micronized progesterone; and group III had luteal support with progesterone plus 17␤-estradiol. All donors had endometrial biopsies on the day of retrieval, and then 3, 5, and 10 d after retrieval. In addition, they had serum estradiol and progesterone measurements on d 3, 5, and 10. Main Outcome Measures: Endometrial L-selectin ligand expression was detected by immunohistochemical staining in the luminal and glandular epithelium. A histological score was used for the quantification of the immunostaining. Sex steroid levels were measured during the luteal phase. Results: By d 10 after retrieval, there was a significant decrease in mean progesterone levels in group I compared with the other two groups that may reflect the expected demise of the corpus luteum. There was also a significant increase in the presence of L-selectin ligands in the luminal epithelium in group III. Conclusions: During controlled ovarian stimulation with a GnRH antagonist protocol, luteal-phase support with micronized progesterone and 17␤-estradiol seem to increase endometrial L-selectin ligand expression in the luminal endothelium.

Japanese Journal of Applied Physics, 2008

We present the fabrication of an InGaAlP multiple-quantum-well semiconductor laser with a ridge w... more We present the fabrication of an InGaAlP multiple-quantum-well semiconductor laser with a ridge waveguide circular ring resonator using novel UV-laser-assisted etching at a cryogenic substrate temperature of À130 C. For a circular ring laser with a 250-mm-radius circular resonator and a 500 mm Y-junction output coupling section, the light-intensity measurement shows a threshold current of 600 mA with an output power of 2.0 mW by pulse mode current injection at 10 kHz. The spectral characterization shows a lasing wavelength centered at 658.2 nm and a side mode rejection ratio as high as 5 dB.

Applied Surface Science, 2008

We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and... more We present the deposition of aluminum nitride (AlN) thin film by KrF excimer laser sputtering and the study of the effects of substrate temperature and laser fluences. Deposition rate of AlN thin film at 0.3Å/pulse has been achieved with laser fluence of 1500mJ/cm2 and at substrate temperature of 250K, and this shows the enhancement of the deposition rate at low substrate temperature. Surface morphology of the deposited films is characterized by atomic force microscopy (AFM). In addition, the electrical performance of the MIS devices with AlN thin films prepared in this experiment has been characterized.