Interface structures in GaAs wafer bonding: Application to compliant substrates (original) (raw)

High-temperature healing of interfacial voids in GaAs wafer bonding

Robert Feigelson

Journal of Applied Physics, 2002

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Asymmetric behavior of monolayer holes after growth in GaAs molecular beam epitaxy revealed by in situ scanning electron microscopy

Kazuaki Tanahashi

Journal of Crystal Growth, 1999

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Transmission electron microscopy study of defects in Sn-doped GaAs films grown by molecular beam epitaxy

Luke Nyakiti

Applied Physics A Solids and Surfaces, 1987

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Influence of Ga vs As prelayers on GaAs/Ge growth morphology

Eugene Fitzgerald

Journal of Electronic Materials, 1996

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Epitaxial growth on porous GaAs substrates

D. Nohavica

Comptes Rendus Chimie, 2013

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Atomic structure of an unusual linear defect at the (001)InAs/(001)GaAs epitaxial interface

Roland Bonnet

Surface and Interface Analysis, 2000

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Elimination of interface defects in mismatched epilayers by a reduction in growth area

Eugene Fitzgerald

Applied Physics Letters, 1988

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Synchrotron X-ray topography study of defects in epitaxial GaAs on high-quality Ge

Patrick McNally

Nuclear Instruments and Methods in Physics Research, 2006

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Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy

Thomas Marschner

Journal of Crystal Growth, 1996

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Misfit dislocations and antiphase domain boundaries in GaAs/Si interface

Ph. Komninou

Journal of Applied Physics, 1994

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Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

Biswarup Satpati

(2009) Journal of Crystal Growth, 311 (7), pp. 1739-1744.

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Influence of the Growth Mode on the Microstructure of Highly Mismatched InAs/GaAs Heterostructures

Achim Trampert

Physica Status Solidi (a), 1994

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Defect formation in epitaxial crystal growth

Z. Liliental-weber

Journal of Electronic Materials, 1991

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Studies of lattice mismatch and threading dislocations in GaAs/Si grown by MBE

Mehmet Kaya

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Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers

Louis Guido

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GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

Alexey Vert

Journal of Applied Physics, 2015

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Acousto-electric study of interface trapping defects in GaAs epitaxial structures

Igor Ostrovskii

Journal of Physical Studies, 1998

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Structural characterization of gallium arsenide epitaxial layers grown on Si(001)

jj vermaak

Materials Letters, 1992

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International Conference on Defects in Semiconductors (16th) Held in Bethlehem, Pennsylvania on 22-26 July 1991

Michael Stavola

1992

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Surface morphologies in GaAs homoepitaxy: Mound formation and evolution

Monica Cotta

Physical Review B, 1998

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Point-like and extended defects in Si and GaAs

Dusan Korytar

Journal of Crystal Growth, 1993

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Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates

Thomas Kuech

Applied Physics Letters, 2003

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Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy

Anna Vila, A. Cornet, J. Morante

Journal of Applied Physics, 1993

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TEM characterization of the GaP/Si interface grown by MOCVD

M. Umeno

Applied Surface Science, 1992

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Critical thickness determination of InAs, InP and GaP on GaAs by X-ray interference effect and transmission electron microscopy

Luisa Gonzalez

Journal of Crystal Growth, 1993

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Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high‐quality GaAs on (100) Si substrates

Yu-Hwa Lo

Applied Physics Letters, 1988

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Island formation in Ge films on GaAs(1 1 0)

Stefano Selci

Solid State Communications, 1985

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Silicon spikes and impurity accumulation at interrupted growth interfaces during molecular-beam epitaxy

Anthony Springthorpe

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1993

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HETEROEPITAXY OF GaAs ON Si: METHODS TO DECREASE THE DEFECT DENSITY IN THE EPILAYER

Z. Liliental-weber

Defect Control in Semiconductors, 1990

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Microstructure of annealed low-temperature-grown GaAs layers

Z. Liliental-weber

Applied Physics A Solids and Surfaces, 1991

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Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface

Patrick Chin

Applied Physics Letters, 1998

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Interface of heterostructure

Baeheng Tseng

Applied Surface Science, 1996

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High resolution transmission electron microscopy study of a GaAs/Si heterostructure grown by chemical beam epitaxy

Peter Goodhew

1992

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Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As

Robert Bachrach

1987

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Threading Dislocation Density Reduction in GaAs on Si Substrates

J. Narayan

Japanese Journal of Applied Physics, 1988

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