Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition (original) (raw)

Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition

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Journal of Crystal Growth, 2007

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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

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Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

Nikola Radic

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Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(001)2Xl by cyclic gas-source molecular beam epitaxy from S&H6

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Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6

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High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition

Gun-do Lee

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Growth of Ge–Si(111) epitaxial layers: intermixing, strain relaxation and island formation

Juan F . Castro-Cal

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Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(001) windows

M. Halbwax

Materials Science in Semiconductor Processing, 2006

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Surface Morphology during Multilayer Epitaxial Growth of Ge(001)

Dr. Mohammed M Hasan

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Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition

Oluwamuyiwa Olubuyide

Thin Solid Films, 2006

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Self-implantation energy and dose effects on Ge solid-phase epitaxial growth

Nicholas Rudawski

2011

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Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates

hans von kaenel

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Solid phase epitaxial re-growth of Sn ion implanted germanium thin films

D. Giubertoni

2012

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Investigation of Critical Technologies of Chemical Vapor Deposition for Advanced (Si)GeSn Materials

Joshua Grant

Masters Thesis, 2019

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Low-Temperature Hetero-Epitaxial Growth of Ge on Si by High Density Plasma Chemical Vapor Deposition

Jason Verley

MRS Proceedings, 2006

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Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System

Larry Cousar, Joshua Grant

Frontiers in Materials, 2015

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Epitaxial growth of Ge and SiGe on Si substrates

A. Larsen

Materials Science in Semiconductor Processing, 2006

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Investigation on the Formation and Propagation of Defects in GeSn Thin Films

Hameed Naseem

ECS Transactions, 2014

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Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition

D. Chrastina, Monica Bollani

Nanotechnology, 2010

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Epitaxial Ge Growth on Si(111) Covered with Ultrathin SiO<sub>2</sub> Films

Konstantin Romanyuk

Journal of Surface Engineered Materials and Advanced Technology, 2013

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Low temperature growth of the epitaxial Ge layers on Si(100) by Hot Wire Chemical Vapor Deposition

Aleksey Nezhdanov

Journal of Physics: Conference Series, 2014

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Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C

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Nanoscale research letters, 2015

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Ultrasmall Ge islands with low diameter-to-height aspect ratio on Si(100)-(2×1) surfaces

Bhupendra N. Dev

Applied Surface Science, 2009

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Si epitaxial growth on SiH3CH3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatment

Masao Sakuraba

Applied Surface Science, 2003

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Growth and characterization of Ge nanostructures selectively grown on patterned Si

A. Sgarlata

Thin Solid Films, 2008

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Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature

Eric Ganz

Applied Physics Letters, 1991

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On the relation between low-temperature epitaxial growth conditions and the surface morphology of epitaxial Si and Si1−xGex layers, grown in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor

Jan Vanhellemont, J. Poortmans

Thin Solid Films, 1994

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Epitaxial Crystallization of Ge on Si Using Evaporation and Recrystallization Techniques

George Celler

MRS Proceedings, 1986

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