Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature (original) (raw)

The epitaxial growth of Ag on Si(111)-(7 x 7) surface and its (√3x√3)-R30 surface phase transformation

Bulletin of Materials Science, 1998

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Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates

hans von kaenel

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Au‐mediated low‐temperature solid phase epitaxial growth of a SixGe1−xalloy on Si(001)

Journal of Applied Physics, 1996

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Growth of Si[sub 1−x]Ge sub x on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions

Patrick Desjardins

Journal of Applied Physics, 1999

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Smooth growth fronts in Si/Ge heteroepitaxy by kinetic growth manipulation

Harold Zandvliet

Physical Review B, 1998

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REM studies of surface dynamics: growth of Ge on Au-deposited Si(111) surfaces

Ultramicroscopy, 1993

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Defect and impurity effects on the initial growth of Ag on Si(111)

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991

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Gallium-mediated homoepitaxial growth of silicon at low temperatures

Physical Review B, 1996

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Growth of Si ultrathin films on silver surfaces: Evidence of an Ag(110) reconstruction induced by Si

Geoffroy Prévot, Tony Lelaidier, Fabien Cheynis, Haik Jamgotchian, Alain Ranguis

Physical Review B, 2013

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Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt

Jan Vanhellemont, Koji Sueoka

physica status solidi (c), 2014

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Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(001)2Xl by cyclic gas-source molecular beam epitaxy from S&H6

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Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Thin Solid Films, 2015

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Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6

Journal of Applied Physics, 1994

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Critical review of the epitaxial growth of semiconductors by rapid thermal chemical vapor deposition

Materials Science and Engineering: R: Reports, 1997

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Growth and perfection of chemically-deposited epitaxial layers of Si and GaAs

Journal of Crystal Growth, 1968

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Epitaxial Growth of Ag on Si(111)-4×1-In Surface Studied by RHEED, STM, and Electrical Resistance Measurements

e-Journal of Surface Science and Nanotechnology, 2003

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REM studies of Ge growth on Au-adsorbed Si(001) surfaces

Surface Science, 1995

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Formation energy of intrinsic point defects in Si and Ge and implications for Ge crystal growth

Jan Vanhellemont

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Epitaxial growth of silver on Br-passivated Si(111) substrates under high vacuum

Bhupendra N. Dev

Applied Surface Science, 1999

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Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C

Vladimir A Yuryev

Nanoscale research letters, 2015

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Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition

Davide Cammilleri

Journal of Crystal Growth, 2007

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X-ray studies of Si/Ge/Si(001) epitaxial growth with Te as a surfactant

Physical Review B, 2003

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STM studies of GeSi thin layers epitaxially grown on Si(111)

Applied Surface Science, 1996

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Chapter 2 Epitaxial growth theory: Vapor-phase and surface chemistry

Semiconductors and Semimetals, 2001

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The effects of the growth parameters on the initial stage of epitaxial growth of GaP on Si by metalorganic chemical vapor deposition

Journal of Crystal Growth, 1993

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Low-temperature metal-induced crystallization of hydrogenated amorphous Si1-xGex (0.25≤x≤1) thin films with Au solution

Applied Physics A, 2007

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The difference between Si and Ge (001) surfaces in the initial stages of growth

2002

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Substrate orientation dependence on the solid phase epitaxial growth rate of Ge

Jose Gomez-Selles

Journal of Applied Physics, 2013

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Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization

Takashi Suemasu

Journal of Crystal Growth, 2010

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Transition from 2D to 3D growth during Ag/Si(1 1 1)-(7×7) heteroepitaxy

Surface Science, 2001

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Single-Crystal Germanium Growth on Amorphous Silicon

Advanced Functional Materials, 2012

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Metal organic vapor phase epitaxy of \hbox {Ge}_{1}\hbox {Sb}_{2}\hbox {Te}_{4}$$Ge1Sb2Te4 thin films on Si(111) substrate

Detlev Grützmacher

Applied Physics A, 2019

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Early stage of Ge growth on Si(001) vicinal surfaces with an 8° miscut along [110]

Physical Review B, 2007

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Crystallization effects in annealed thin Ge–Se films photodiffused with Ag

Journal of Non-Crystalline Solids, 2006

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Kinetics of the heteroepitaxial growth of Ge on Si(001)

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002

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