Directional Deposition of Silicon Oxide by a Plasma Enhanced TEOS Process (original) (raw)
Effects of process parameters on the properties of silicon oxide films using plasma enhanced chemical vapor deposition with tetramethoxysilane
Jean-marie Nedelec
Current Applied Physics, 2009
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Deposition of silicon oxide film from tetraethoxysilane using a pulsed dielectric barrier discharge
M. Ekwińska
Czechoslovak Journal of Physics, 2006
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TEOS-PECVD system for high growth rate deposition of SiO2 films
Ashok Mahajan
Vacuum, 2005
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The Growth of Silicon Oxide Films by Remote Plasma Enhanced CVD
David Tsu
MRS Proceedings, 1986
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Investigation of low temperature SiO2 plasma enhanced chemical vapor deposition
Eray Aydil
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Plasma-enhanced Chemical Vapor Deposition of silicon dioxide Optimizing dielectric films through plasma characterization
Carlos David Ramos Vilchis
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Plasma and surface diagnostics during plasma-enhanced chemical vapor deposition of SiO2 from SiH4/O2/Ar discharges
Eray Aydil
Thin Solid Films, 1996
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Low-temperature plasma enhanced chemical vapor deposition of SiO2
Eray Aydil
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Effect of N2O/SiH4 flow ratios on properties of amorphous silicon oxide thin films deposited by inductively-coupled plasma chemical vapor deposition with application …
Lakshminarayan Nariangadu
Vacuum, 2009
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Effect of impinging ion energy on the substrates during deposition of SiOx films by radiofrequency plasma enhanced chemical vapor deposition process
Rajiv Kishore
Thin Solid Films, 2011
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PROCESS CHARACTERISATION FOR LPCVD DEPOSITION OF SiO2 FILMS FROM TEOS LIQUID SOURCE
Giulio Sarti
Le Journal de Physique Colloques
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Characteristics of SiO[sub x] Thin Film Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Using PDMS∕O[sub 2]∕He
JongSik Oh
Journal of The Electrochemical Society - J ELECTROCHEM SOC, 2009
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Summary Abstract: Ion‐beam sputter deposition of oxide films
Hulya Demiryont
Journal of vacuum science & technology, 1985
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Growth of SiO2 films by TEOS-PECVD system for microelectronics applications
Ashok Mahajan
Surface and Coatings Technology, 2004
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The Electrical Properties of Silicon Oxide Deposited By Remote Plasma Enhanced Chemical Vapor Deposition (Rpecvd)
David Tsu
MRS Proceedings, 1987
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Effect of oxygen content on barrier properties of silicon oxide thin film deposited by dual ion-beam sputtering
Daiwon Choi
Journal of Non-Crystalline Solids, 2006
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Plasma-enhanced reactively evaporated deposition of SiO2 films
A. Shklyaev
Applied Surface Science, 1995
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On the Plasma Chemistry During Plasma Enhanced Chemical Vapor Deposition of Microcrystalline Silicon Oxides
Bernd Stannowski
Plasma Processes and Polymers, 2014
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Effect of N2O/SiH4 flow ratios on properties of amorphous silicon oxide thin films deposited by inductively-coupled plasma chemical vapor deposition with application to silicon surface passivation
Dr.Lakshminarayan Nariangadu
Vacuum, 2009
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Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma
Stanislav Moshkalev
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2007
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Silicon Oxide Barrier Films Deposited on Polycarbonate Substrates in Pulsed Plasmas
Lanti Yang
Plasma Chemistry and Plasma Processing, 2019
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Desorption from oxide films made by plasma enhanced chemical vapor deposition using tetraethylorthosilicate
William G Cowden
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
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Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture
O. Bonnaud, Nilton Morimoto
Brazilian Journal of Physics, 2001
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Structural properties of SiO2 films prepared by plasma-enhanced chemical vapor deposition
Giulio Ceriola
Materials Science in Semiconductor Processing, 2001
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High-rate plasma-deposited SiO2 films for surface passivation of crystalline silicon
Mariadriana Creatore
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2006
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Electrical Properties of Plasma-Deposited Silicon Oxide Clarified by Chemical Modeling
Alexey Kovalgin
ECS Transactions, 2009
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Studies of the earliest stages of plasma-enhanced chemical vapor deposition of SiO 2 on polymeric substrates
Gilles Dennler
Thin Solid Films, 2001
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Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD
Kuan Chiu
Applied Mechanics and Materials, 2012
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SiOxNy Films deposited with SiCl4 by remote plasma enhanced CVD
Miguel aguilar sanchez
Journal of Materials Science, 1999
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Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at low Power Plasma
Tushar Salve
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First nucleation steps during deposition of SiO2 thin films by plasma enhanced chemical vapour deposition
Francisco Yubero
Surface Science, 2007
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Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD
Alexey Kovalgin
2007
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Deposition of SiOx coatings by inductively coupled plasma: Effect of pulsed hexamethyldisiloxan flow
Marc Böke
Plasma Processes and Polymers, 2018
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