Initial growth of hexagonal GaN grown on an Si(111) substrate coated with an ultra-thin SiC buffer layer (original) (raw)
Study of the optical and structural properties of GaN films grown on Si substrates with a SiC layer
mario vazquez lira
Thin Solid Films, 2003
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Growth of hexagonal GaN thin films on Si(1 1 1) with cubic SiC buffer layers
wilson ho
Journal of Crystal Growth, 1998
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Masakazu Ichikawa
Journal of Crystal Growth, 2002
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Theodore Moustakas
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Bablu Ghosh
International Journal of Materials Science and Applications, 2013
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Christian Zorman
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Kei Lau
physica status solidi (c), 2012
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Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition
Jung-Hae Choi
Journal of Crystal Growth, 2005
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Masakazu Ichikawa
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Paul Bohn
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D. As
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Interfacial effects during GaN growth on 6H-SiC
Jostein Grepstad
Journal of Electronic Materials, 1999
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The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with interlayers
Özgür Duygulu
2009
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Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions
Gong-Ru Lin
Scientific Reports, 2016
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Heteroepitaxial Growth of GaN on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy
James Speck
physica status solidi (a), 2002
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Growth and Characterization of GaN Epilayers on Chemically Etched Surface of 3C-SiC Intermediate Layer Grown on Si(111) Substrate
EMMANUEL WAMALWA
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MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substrates
Lingyu Gan
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Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition
A. Uddin
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Austin Bavard
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Evidence for relaxed and high-quality growth of GaN on SiC(0001)
Settimio Mobilio
Applied Physics Letters, 1999
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Effect of thickness on the structural and optical properties of GaN films grown on Si(111)
Ahmed Elnaggar
Journal of Materials Science: Materials in Electronics, 2011
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Pendeo-epitaxial growth of gallium nitride on silicon substrates
Christian Zorman
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Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si
Bernd Stritzker
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Torsten Barfels, Hans-Joachim Fitting
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Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(1 1 1)
Yun Wang
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Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
silke christiansen
MRS Internet Journal of Nitride Semiconductor Research, 1996
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Suleyman Ozcelik
Current Applied Physics, 2009
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TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
Lourdes Salamanca-Riba
MRS Proceedings, 1999
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The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD
Joseph Salzman
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High Quality GaN Layers Grown by Metalorganic Chemical Vapor Deposition on Si(111) Substrates
Dieter Bimberg
physica status solidi (a), 1999
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Khalled Al-heuseen
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Kevin Chen
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Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer
Dieter Bimberg
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Zhe Feng
Thin Solid Films, 2002
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Effect of Al pre-deposition on AlN buffer layer and GaN film grown on Si (111) substrate by MOCVD
lee kwang
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