Comparison of electrical parameters of Zn/p-Si and Sn/p-Si Schottky barrier diodes (original) (raw)

The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature

haziret durmus

International Journal of Electronics, 2018

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The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy

Şükrü Karataş

Vacuum, 2004

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The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes

Şükrü KarataŞ, o. Bakkaloglu

2009

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Correlation between barrier heights and ideality factors of H-terminated Sn/ pSi(1 0 0) Schottky barrier diodes

Hidayet Çetin

Microelectronic Engineering, 2008

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Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes

Guven Cankaya

Solid State Communications, 2003

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Annealing temperature effect on electrical characteristics of Co/p-type Si Schottky barrier diodes

o. Bakkaloglu

Physica B: Condensed Matter, 2009

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Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes

Guven Cankaya

Zeitschrift Fur Naturforschung a a Journal of Physical Sciences, 2004

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Electrical characteristics of Au/ n-GaAs Schottky barrier diodes with and without SiO 2 insulator layer at room temperature

Suleyman Ozcelik

Vacuum, 2009

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Analysis of IV Characteristics of Pd/ZnO Thin Film/n-Si Schottky Diodes with Series Resistance

Divya Somvanshi

Journal of Nanoelectronics and Optoelectronics, 2014

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Laterally Inhomogeneous Barrier Analysis Using Capacitance–Voltage Characteristics of Identically Fabricated Schottky Diodes

kübra akgül

Journal of Electronic Materials, 2016

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Analysis of I–V Characteristics of Pd/ZnO Thin Film/n-Si Schottky Diodes with Series Resistance

Divya Somvanshi

Journal of Nanoelectronics and Optoelectronics

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Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

elanur seven

2018

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High-barrier height Sn/p-Si schottky diodes with interfacial layer by anodization process

Cabir Temirci

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Electrical characteristics of p-Si/TiO2/Al and p-Si/TiO2-Zr/Al Schottky devices

İlbilge Dökme

Philosophical Magazine, 2016

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The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

Mehmet Mahir Bülbül

Applied Surface Science, 2006

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A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes

İlke Taşçıoğlu

Materials Science in Semiconductor Processing Volume 16, Issue 6, December 2013, Pages 1865–1872, 2013

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A comparative study on the electrical parameters of Au/nn-Si Schottky diodes with and without interfacial (Ca1.91.9Pr0.10.1Co4Oxx) layer

Prof.Dr. İbrahim USLU

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Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

giray topal

Applied Surface Science, 2005

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The current-voltage characteristics of V 2 O 5 /n-Si Schottky diodes formed with different metals

Meltem Donmez Kaya, Suleyman Ozcelik

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Advance View Proofs Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au / n-Type Si Schottky Barrier Diode Modi fi ed Using a PEDOT : PSS Interlayer

Zagarzusem Khurelbaatar

2014

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Dielectric, conduction and interface properties of Au/Pc/p-Si Schottky barrier diode

Mustafa COŞKUN

Synthetic Metals, 2012

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On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

Mehmet Mahir Bülbül

Microelectronic Engineering, 2006

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Minority Carrier Profile and Storage Time of a Schottky Barrier Diode for All levels of injection

Shahidul Hassan

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Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes

Omer Gullu

Vacuum, 2009

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Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

Mehmet Mahir Bülbül

Applied Surface Science, 2006

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Analysis of the forward and reverse bias IV characteristics on Au/PVA: Zn/n-Si Schottky barrier diodes in the wide temperature range

İlke Taşçıoğlu

Journal of Applied Physics, 2011

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Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

Doldet Tantraviwat

Walailak Journal of Science and Technology (WJST), 2018

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The Effect of Air-Exposed Layer on Electrical Properties of Cu/n-Si/Al Schottky Diodes

Abdulkadir Korkut, Abdulkadir Korkut

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Electrical properties of Sn/Methyl Violet/p-Si/Al Schottky diodes

Abdullah Özkartal

Materials Today: Proceedings, 2019

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A detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature range

Haluk Şafak

Journal of Applied Physics, 2011

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Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

Enise Ayyıldız

Solid-State Electronics, 1996

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