Infrared ellipsometry as an investigation tool of thin layers grown into plasma immersion N+ implanted silicon (original) (raw)

Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation

Cristiano Krug

Applied Physics Letters, 1999

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Structural studies of silicon oxynitride layers formed by low energy ion implantation

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Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

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Nondestructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry

T. Lohner

Journal of Applied Physics, 1989

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High quality of ultra-thin silicon oxynitride films formed by low-energy nitrogen implantation into silicon with additional plasma or thermal oxidation

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Annealing of Si surface region modified by plasma immersion implantation of nitrogen

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HI-ERDA, Micro-Raman and HRXRD studies of buried silicon oxynitride layers synthesized by dual ion implantation

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Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation

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Infrared ellipsometry investigation of SiO_xN_y thin films on silicon

Patrick Chaton, Jean-marc Frigerio

Applied Optics, 1996

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Very low energy nitrogen implantation for ultrathin silicon oxynitride film formation

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Synthesis of silicon oxynitride layers by dual ion-implantation and their annealing behaviour

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Silicon Oxynitride Layers Fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) for CMOS Devices

Robert Mroczyński

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Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon–nitrogen–hydrogen system

Wolfgang Ensinger

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Characterization of oxide layers grown on implanted silicon

Gianluca Franco

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1995

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Influence of dielectric layer thickness on charge injection, accumulation and transport phenomena in thin silicon oxynitride layers: a nanoscale study

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Study of structure and surface modification of silicon-on-insulator (SOI) devices synthesized by dual ion implantation

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Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing

Andreas Othonos

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Analysis of the electrical behavior of silicon rich silicon oxides

Jorge Barreto

2012

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Si-oxide/Si and Si-oxynitride/Si interfaces analysed by ultra-low energy SIMS

P. Konarski

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Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

Luis Zambom

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Surface-near analyses of ultra thin silicon nitride layers by NRA, channeling RBS, FT IR ellipsometry and AFM

Wolfgang Grill

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Optical and structural properties of silicon-rich silicon oxide films: Comparison of ion implantation and molecular beam deposition methods

Jouko Lahtinen

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Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2+ implantation

Dimitris Tsoukalas

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Structural studies of 20 keV oxygen-implanted silicon

GAURAV GUPTA

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2000

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Determination of complex dielectric functions of ion implanted and implanted-annealed amorphous silicon by spectroscopic ellipsometry

T. Lohner

Journal of Applied Physics, 1992

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Characterization of ion implanted silicon by ellipsometry and channeling

T. Lohner

Nuclear Instruments and Methods in Physics Research, 1983

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Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures

vibha SINGH

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2006

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