Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs (original) (raw)

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Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts

Mudassar Meer

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Regina Paszkiewicz

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Arpan Chakraborty, James Speck

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MBE-grown ultra-shallow AlN/GaN HFET technology

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