High electron mobility transistors based on the AlN/GaN heterojunction (original) (raw)
AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy
Aliaksei Vainilovich
Japanese Journal of Applied Physics, 2019
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AlGaN/GaN Heterostructures in High Electron Mobility Transistors
Vladimir Popok
2018
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High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy
Leo Li
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
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Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates
David Deen
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Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
Engin Arslan
Journal of Applied Physics, 2009
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Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors
Lutz Kirste
Physica status solidi, 2008
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Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures
Amir Dabiran
Applied Physics Letters, 2008
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Electric Properties of AlGaN/GaN/Si High electron Mobility Transistors
Malek Gassoumi
Silicon, 2021
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High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers
Maarten Leys
MRS Proceedings, 2003
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High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
Leo Li
Applied Physics …, 2000
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Growth of High Mobility AlGaN/GaN Heterostructures by Ammonia-Molecular Beam Epitaxy
Jennifer Bardwell
physica status solidi (a), 1999
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GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)
Regina Paszkiewicz
physica status solidi (b), 2015
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Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers
Jennifer Bardwell
Japanese Journal of Applied Physics, 2013
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Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
D S Rawal
AIP Advances
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Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors
B. Grimbert
Applied Physics Express, 2011
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Metal���face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
Tom Zimmermann
2011
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Electrical characterization of AlGaN/GaN/Si high electron mobility transistors
H. Mosbahi
Journal of Ovonic Research
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Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors **
Tien Tung Luong
Chemical Vapor Deposition, 2014
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N-face high electron mobility transistors with a GaN-spacer
James Speck
physica status solidi (a), 2007
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Gate Length Scaling Effect on High-Electron Mobility Transistors Devices Using AlGaN/GaN and AlInN/AlN/GaN Heterostructures
Liann-Be Chang
Journal of Nanoscience and Nanotechnology, 2014
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Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
James Speck
Journal of Crystal Growth, 2001
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New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al 2 O 3 /Ga 2 O 3 Stacks
Minwoo Ha
Japanese Journal of Applied Physics, 2012
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2.3 nm barrier AlN/GaN HEMTs with insulated gates
David Deen
Physica Status Solidi (c), 2008
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An AlN/Al0.85Ga0.15N high electron mobility transistor
Carlos Sanchez
Applied Physics Letters, 2016
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Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy
J. Faurie
physica status solidi (c), 2005
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Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
Yuya Yamaoka
physica status solidi (a), 2017
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Theoretical model of transport characteristics of AlGaN/GaN high electron mobility transistors
Asghar Asgari
2005
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Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)
Patrick Chin
2005
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Electron transport in passivated AlGaN/GaN/Si HEMTs
H. Mosbahi
Materials Science in Semiconductor Processing, 2013
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AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Rüdiger Quay
physica status solidi (b), 2017
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