Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
Morgan Ware
Nanoscale Research Letters
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Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots
Dieter Bimberg
Journal of Crystal Growth, 1998
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Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates
Pedro Pablo González Borrero
Superlattices and Microstructures, 1998
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Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers
Tai-Yuan Lin
Materials Science and Engineering: B, 2010
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Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness
Bouraoui ILAHI
physica status solidi (c), 2005
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Emission and HR-XRD study of InGaAs/GaAs quantum wells with InAs quantum dots grown at different temperatures
Georgiy Polupan
Journal of Materials Science: Materials in Electronics, 2017
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Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots
Bouraoui ILAHI
Materials Science and Engineering: C, 2006
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Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
Huiyun Liu
Applied Physics Letters, 1996
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Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures
BAOLAI LIANG
Crystals
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Effects of thin GaAs insertion layer on InAs∕(InGaAs)∕InP(001) quantum dots grown by metalorganic chemical vapor deposition
Jean-pierre Leburton
Applied Physics Letters, 2005
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InAs/GaAs SK quantum dots stacking: Impact of spacer layer on optical properties
Ibtissem Fraj, Lotfi Bouzaiene
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Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3��m emission
Bouraoui ILAHI
Applied Physics A: Materials Science & Processing, 2004
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Time-resolved optical characterization of InGaAs/GaAs quantum dots
John Bowers
Applied Physics Letters, 1994
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Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission
Joel Huerta
Acta Physica Polonica A, 2017
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A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot heterostructures
Aditya Patel
Superlattices and Microstructures, 2013
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Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns
Somsak Panyakeow
Nanoscale Research Letters, 2011
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Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
Bouraoui ILAHI
Applied Physics A, 2005
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Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate
Vitaliy Dorogan
Proceedings of SPIE - The International Society for Optical Engineering, 2009
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Improvement of InAs quantum dots optical properties in close proximity to GaAs(001) substrate surface
Luisa Gonzalez
Journal of Crystal Growth, 2008
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Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb
Joaquín García
Applied Physics Letters, 2005
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Correlation between surface and buried InAs quantum dots
B. Liang
Applied Physics Letters, 2006
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Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures
Wagner Rodrigues
Nanotechnology, 2007
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Tuning the wetting layer in the InGaAs/AlGaAs quantum dots
E. Grilli
Physica E: Low-dimensional Systems and Nanostructures, 2003
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Photoluminescence from InAs Quantum Dots Buried Under Low-Temperature-Grown GaAs
Nikolay Bert
physica status solidi (b), 2019
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Hybridized quantum dot-wetting layer states in photoluminescence of In(Ga)As/GaAs dot chain samples
Vitaliy Dorogan, Yu. I I Mazur, Morgan Ware
Journal of Applied Physics, 2009
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Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells
Ingri Jazmin Guerrero Moreno
Journal of Luminescence, 2014
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Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealing
Nilanjan Halder
Applied Physics A, 2011
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Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots
Dieter Bimberg
Journal of Crystal Growth, 2000
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InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties
BAOLAI LIANG
2006
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Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer
D. Gershoni
Applied Physics Letters, 2009
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Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures
Nurul Fadzlin Hasbullah
IEEE Journal of Quantum Electronics, 2009
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