Tuning the optical performance of surface quantum dots in InGaAs/GaAs hybrid structures (original) (raw)

Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots

Morgan Ware

Nanoscale Research Letters

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Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots

Dieter Bimberg

Journal of Crystal Growth, 1998

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Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates

Pedro Pablo González Borrero

Superlattices and Microstructures, 1998

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Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

Tai-Yuan Lin

Materials Science and Engineering: B, 2010

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Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness

Bouraoui ILAHI

physica status solidi (c), 2005

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Emission and HR-XRD study of InGaAs/GaAs quantum wells with InAs quantum dots grown at different temperatures

Georgiy Polupan

Journal of Materials Science: Materials in Electronics, 2017

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Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots

Bouraoui ILAHI

Materials Science and Engineering: C, 2006

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Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots

Huiyun Liu

Applied Physics Letters, 1996

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Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures

BAOLAI LIANG

Crystals

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Effects of thin GaAs insertion layer on InAs∕(InGaAs)∕InP(001) quantum dots grown by metalorganic chemical vapor deposition

Jean-pierre Leburton

Applied Physics Letters, 2005

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InAs/GaAs SK quantum dots stacking: Impact of spacer layer on optical properties

Ibtissem Fraj, Lotfi Bouzaiene

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Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3��m emission

Bouraoui ILAHI

Applied Physics A: Materials Science & Processing, 2004

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Time-resolved optical characterization of InGaAs/GaAs quantum dots

John Bowers

Applied Physics Letters, 1994

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Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission

Joel Huerta

Acta Physica Polonica A, 2017

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A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot heterostructures

Aditya Patel

Superlattices and Microstructures, 2013

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Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns

Somsak Panyakeow

Nanoscale Research Letters, 2011

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Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer

Bouraoui ILAHI

Applied Physics A, 2005

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Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate

Vitaliy Dorogan

Proceedings of SPIE - The International Society for Optical Engineering, 2009

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Improvement of InAs quantum dots optical properties in close proximity to GaAs(001) substrate surface

Luisa Gonzalez

Journal of Crystal Growth, 2008

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Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb

Joaquín García

Applied Physics Letters, 2005

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Correlation between surface and buried InAs quantum dots

B. Liang

Applied Physics Letters, 2006

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Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures

Wagner Rodrigues

Nanotechnology, 2007

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Tuning the wetting layer in the InGaAs/AlGaAs quantum dots

E. Grilli

Physica E: Low-dimensional Systems and Nanostructures, 2003

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Photoluminescence from InAs Quantum Dots Buried Under Low-Temperature-Grown GaAs

Nikolay Bert

physica status solidi (b), 2019

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Hybridized quantum dot-wetting layer states in photoluminescence of In(Ga)As/GaAs dot chain samples

Vitaliy Dorogan, Yu. I I Mazur, Morgan Ware

Journal of Applied Physics, 2009

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Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells

Ingri Jazmin Guerrero Moreno

Journal of Luminescence, 2014

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Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealing

Nilanjan Halder

Applied Physics A, 2011

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Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots

Dieter Bimberg

Journal of Crystal Growth, 2000

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InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties

BAOLAI LIANG

2006

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Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer

D. Gershoni

Applied Physics Letters, 2009

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Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures

Nurul Fadzlin Hasbullah

IEEE Journal of Quantum Electronics, 2009

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