The effect of radiation on ion-implanted silicon detectors (original) (raw)
1986, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Investigations on changes of characteristics of ion-implanted silicon-junction detectors when exposed to various doses of radiation ( < 105 and > 106 rad) were performed. It was found that the increase of leakage current depends not only on the dose but also on the gradient of irradiation.
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