Comprehensive model of damage accumulation in silicon (original) (raw)

Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon

G. Lulli

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 1996

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Damage evolution in low-energy ion implanted silicon

Martin Chicoine

Physical Review B, 2007

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A detailed physical model for ion implant induced damage in silicon

Borna Obradovic

IEEE Transactions on Electron Devices, 1998

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Monte Carlo modeling of amorphization resulting from ion implantation in Si

Lourdes Pelaz

Computational Materials Science, 2003

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Modeling of damage generation mechanisms in silicon at energies below the displacement threshold

Lourdes Pelaz

Physical Review B, 2006

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Molecular dynamics characterization of as-implanted damage in silicon

Lourdes Pelaz

Materials Science and Engineering: B, 2005

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Damage-to-dose ratio after low energy silicon ion implantation into crystalline silicon

Nicole Herbots

Journal of Materials Research, 1993

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Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study

Lourdes Pelaz

2012

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Damage to Crystalline Silicon Following Implantation by Low Energy Silicon Ions

Nicole Herbots

MRS Proceedings, 1992

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Atomistic modeling of ion beam induced amorphization in silicon

Pedro Lopez

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004

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Pre-amorphization damage study in as-implanted silicon

Marina Berti

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995

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Atomistic Modeling of Ion Beam Induced Defects in Si: From Point Defects to Continuous Amorphous Layers

Lourdes Pelaz

MRS Proceedings, 2004

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Atomistic modeling of ion implantation technologies in silicon

Lourdes Pelaz

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015

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Implanted damage evolution in sequential annealed silicon

Octavian Buiu

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994

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Ion-beam-induced amorphization and recrystallization in silicon

Lourdes Pelaz

Journal of Applied Physics, 2004

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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

George Gilmer

Applied Physics Letters, 1996

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Multiscale modeling of radiation damage and annealing in Si

Pedro Lopez

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007

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Simulation of Single Particle Displacement Damage in Silicon–Part II: Generation and Long-Time Relaxation of Damage Structure

Pierre Magnan

IEEE Transactions on Nuclear Science, 2017

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New Insight into Damage-Related Phenomena in Si Implanted Under Extreme Conditions

Bent Nielsen

MRS Proceedings, 1995

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Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in Si

P. Zalm

Radiation Effects and Defects in Solids, 2009

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Microscopic Description of the Irradiation-Induced Amorphization in Silicon

Lourdes Pelaz

Physical Review Letters, 2003

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Evolution of low-fluence heavy-ion damage in Si under high energy ion irradiation

Anna Battaglia

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991

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EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon

R. Nipoti

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995

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Damage accumulation in Si during high-dose self-ion implantation

robert averback

Journal of Applied Physics, 2004

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Electrical characterization of MeV heavy-ion-induced damage in silicon: Evidence for defect migration and clustering

PK Giri

Journal of Applied Physics, 1998

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Electrical measurement of the lattice damage induced by -particle implantation in silicon

Santolo Daliento

Vacuum, 2005

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