Damage evolution in low-energy ion implanted silicon (original) (raw)

Damage to Crystalline Silicon Following Implantation by Low Energy Silicon Ions

Nicole Herbots

MRS Proceedings, 1992

View PDFchevron_right

Comprehensive model of damage accumulation in silicon

Pedro Castrillo

Journal of Applied Physics, 2008

View PDFchevron_right

Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon

chen lu

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1994

View PDFchevron_right

Temperature effect on damage generation mechanisms during ion implantation in Si. A classical molecular dynamics study

Lourdes Pelaz

2012

View PDFchevron_right

Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon

T. Lohner

Thin Solid Films, 1993

View PDFchevron_right

Molecular dynamics characterization of as-implanted damage in silicon

Lourdes Pelaz

Materials Science and Engineering: B, 2005

View PDFchevron_right

A detailed physical model for ion implant induced damage in silicon

Borna Obradovic

IEEE Transactions on Electron Devices, 1998

View PDFchevron_right

Ion Beam Induced Structural and Electrical Modifications in Crystalline and Amorphous Silicon

Anna Battaglia

MRS Proceedings, 1993

View PDFchevron_right

Implanted damage evolution in sequential annealed silicon

Octavian Buiu

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994

View PDFchevron_right

EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon

R. Nipoti

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995

View PDFchevron_right

Damage-to-dose ratio after low energy silicon ion implantation into crystalline silicon

Nicole Herbots

Journal of Materials Research, 1993

View PDFchevron_right

Pre-amorphization damage study in as-implanted silicon

Marina Berti

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995

View PDFchevron_right

Investigation of Ion implantation induced electrically active defects in p-type silicon

Jayantha Senawiratne

2009 IEEE International SOI Conference, 2009

View PDFchevron_right

Evolution of low-fluence heavy-ion damage in Si under high energy ion irradiation

Anna Battaglia

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991

View PDFchevron_right

Ion-Implantation of Silicon in Gallium-Arsenide - Damage and Annealing Characterizations

R. Nipoti

Nuclear Instruments & Methods in Physics Research, 1983

View PDFchevron_right

Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation

Виктор Мордкович, Kirill Shcherbachev

Crystallography Reports, 2013

View PDFchevron_right

Modeling of damage generation mechanisms in silicon at energies below the displacement threshold

Lourdes Pelaz

Physical Review B, 2006

View PDFchevron_right

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

maurice QUILLEC

Nano Letters, 2014

View PDFchevron_right

Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in Si

P. Zalm

Radiation Effects and Defects in Solids, 2009

View PDFchevron_right

Defect evolution in MeV ion-implanted silicon

Chennupati Jagadish

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms - NUCL INSTRUM METH PHYS RES B, 1996

View PDFchevron_right

Defect Structures and Electrical Behavior of Rapid Thermally Annealed Ion Implanted Silicon

Devendra Sadana

MRS Proceedings, 1987

View PDFchevron_right

Hydrogen-Implantation-Induced Damage in Silicon

Eero Rauhala

1987

View PDFchevron_right

New Insight into Damage-Related Phenomena in Si Implanted Under Extreme Conditions

Bent Nielsen

MRS Proceedings, 1995

View PDFchevron_right

Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Nikolay Cherkashin

Journal of Applied Physics, 2016

View PDFchevron_right

Ion-implantation induced anomalous surface amorphization in silicon

khanh khanh

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994

View PDFchevron_right

Annealing studies of point defects in low dose MeV ion implanted silicon

Chennupati Jagadish

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms - NUCL INSTRUM METH PHYS RES B, 1997

View PDFchevron_right

Microstructural study of dynamically annealed c-Si using MeV N+ ions

Pratap Kumar Sahoo

(2007) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 256 (1), pp. 276-280.

View PDFchevron_right

Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients

D. Skarlatos

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999

View PDFchevron_right

Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation

Anastasios Antonakos

Journal of Raman Spectroscopy, 2013

View PDFchevron_right

Reverse annealing effects in heavy ion implanted silicon

Anders Hallén

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999

View PDFchevron_right

Damage accumulation in Si during high-dose self-ion implantation

robert averback

Journal of Applied Physics, 2004

View PDFchevron_right