InP-In1-xGaxAsyP1-yembedded mesa stripe lasers (original) (raw)
Related papers
Epitaxial Structure Design of a Long-Wavelength InAlGaAs/InP Transistor Laser
2011
The threshold condition in long-wavelength InAl- GaAs/InP transistor lasers is theoretically and numerically inves- tigated. The optical gain in the In0.58Ga0.42As/In(Al0.4Ga0.6)As strained quantum well is calculated using a simplified k-selection model while intervalence band absorption is considered as the major intrinsic optical loss in the transistor lasers. It is found that room-temperature lasing of an N-InP/ p-In(Al0.4Ga0.6)As/N-InP double heterostructure transistor laser is achieved only when the base thickness and doping level are within a specific narrow range. However, the selectable range is significantly expanded by means of facet coating, structure engineering, and quantum well design. By using a more compressively-strained or thicker quantum well as the active region in a separate confinement heterostructure transistor laser, it is possible to obtain a threshold current density as low as sub-100 A/cm 2 .
Single-step growth of InGaAsP/InP laser array on patterned InP substrate
Physica E: Low-dimensional Systems and Nanostructures, 2004
Arrays of five InGaAsP/InP single mode junction-defined buried stripe heterostructure lasers are described. The laser arrays were grown on multi-channeled InP substrate by single-step liquid phase epitaxy. The buried double heterostructure and the lateral current confining structure were formed in the same growth process. InGaAsP layer growth is dominated by the preferred orientation, with (1 0 0) growth favored over other directions. As a result of lowtemperature single-step growth, the device yield is high. These laser arrays are characterized by output power close to 0:6 W; high quantum efficiency, symmetrical far-field patterns and excellent linearity of the light-current curve. Stable single transverse mode operation obtained up to 600 mW emitted power. r
Very low threshold InGaAsP mesa laser
IEEE Journal of Quantum Electronics, 1983
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described.
IEEE Journal of Quantum Electronics, 1984
The mass-transported buried-heterostructure lasers have been investigated in detail. Techniques have been developed for fabrication control and wafer characterization. High yield of low-threshold lasers was obtained with the lowest threshold current being 5.5 mA. Differential quantum efficiencies as high as 28 percent per facet and smooth far-field patterns were also obtained. Deep Zn-diffusion and higher p-doping have been used to improve the linearity of the lightcurrent characteristics. Linear light output to greater than 13 mW per facet and well-behaved threshold-temperature dependence were achieved. A conformal mapping technique has been used to calculate the voltage distribution in the laser mesa. The forward-bias voltage thus obtained for the InP pn homojunctions in the transported regions is shown to be capable of resulting in the sublinear dependence of light output on current observed in lasers with lightly p-doped cap layers. The current limit within which the laser can be operated without leakage through the homojunctions has been calculated for various device geometries and doping levels.
Narrow-stripe injection lasers in GaInAsP/InP
IEEE Journal of Quantum Electronics, 1981
Results are reported on CW and pulsed operation of GaInAsPjInP narrow-stripe (3 pm) injection lasers emitting at the 1.3 gm wavelength. These lasers operate with linear light-current characteristics, stable zeroth-order transverse mode, and no transient oscillations. Their far-field emission pattern in the plane parallel to the junction is double peaked and their spectral emission is multimode.
2002
The trade-off between the effect of leakage suppression and the increase of related optical loss due to placement of the p-doping in 1.3-1.55µm InGaAsP MQW edgeemitting lasers is detailed. The effect of the Zn doping profile on laser characteristics is illustrated by experimental results obtained for telecom lasers and high power lasers. The design approach combining broadened waveguides with p-doping profile optimization is discussed. 16W of pulsed optical power is obtained from 100µm aperture 1.5µm InGaAsP MQW high power lasers with broadened waveguide and doped p-cladding/SCH interface.
IEEE Journal of Quantum Electronics, 1999
In this paper, we study both experimentally and theoretically how the change of the p-doping profile, particularly the p-i junction placement, affects the output characteristics of 1.3-m InGaAsP-InP multiple-quantum-well (MQW) lasers. The relationship between the p-doping profile before and after regrowth is established, and the subsequent impact of changes in the p-i junction placement on the device output characteristics, is demonstrated. Device characteristics are simulated including carrier transport, capture of carriers into the quantum wells, the quantum mechanical calculation of the properties of the wells, and the solution for the optical mode and its population selfconsistently as a function of diode bias. The simulations predict and the experiments confirm that an optimum p-i junction placement simultaneously maximizes external efficiency and minimizes threshold current. Tuning of the base epitaxial growth Zn profile allows one to fabricate MQW devices with a threshold current of approximately 80 A/cm 2 per well for devices with nine QW's at room temperature or lasers with a characteristic temperature T 0 = 70 K within the temperature range of 20 C-80 C.