Very low threshold InGaAsP mesa laser (original) (raw)

Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

John Bowers

IEEE Photonics Technology Letters, 2000

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Single-step growth of InGaAsP/InP laser array on patterned InP substrate

Vilmos Rakovics

Physica E: Low-dimensional Systems and Nanostructures, 2004

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InP-In1-xGaxAsyP1-yembedded mesa stripe lasers

Navin Patel

IEEE Journal of Quantum Electronics, 2000

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Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP:Fe and GaAs:Fe

J. Halonen

Journal of Electronic Materials, 2001

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Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers: experiment and modeling

Gregory Belenky, C. Reynolds

IEEE Journal of Quantum Electronics, 1999

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High-frequency GaInAsP/InP laser mesas in (-110) direction with thick semi-insulating InP:Fe

O. Kjebon

IEEE Photonics Technology Letters, 2000

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QD laser on InP substrate for 1.55 µm emission and beyond

N. Bertru, A. Corre

2010

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Oxide defined TJS lasers in InGaAsP/InP DH structures

Navin Patel

IEEE Journal of Quantum Electronics, 1979

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QD laser on InP substrate for 1.55 mu m emission and beyond

C. Paranthoen, jacky even

Quantum Sensing and Nanophotonic Devices Vii, 2010

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Low-threshold InGaAsP ridge waveguide lasers at 1.3 µm

Robert Nahory

IEEE Journal of Quantum Electronics, 1983

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Epitaxial Structure Design of a Long-Wavelength InAlGaAs/InP Transistor Laser

Yong Huang

2011

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Simulation of a 1550-nm InGaAsP-InP transistor laser

R. Vafaei

Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration, 2009

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Towards a monolithically integrated III–V laser on silicon: optimization of multi-quantum well growth on InP on Si

Fabrice Raineri

Semiconductor Science and Technology, 2013

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1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region

MengChyi Wu

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002

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Fabrication, characterization, and analysis of mass-transported GaInAsP/InP buried-heterostructure lasers

Wilman Tsai

IEEE Journal of Quantum Electronics, 1984

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Temperature performance of 1.3-μm InGaAsP-InP lasers with different profile of p-doping

Gregory Belenky

IEEE Photonics Technology Letters, 1997

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Direct measurement of lateral carrier leakage in 1.3-mum InGaAsP multiple-quantum-well capped mesa buried heterostructure lasers

Bernd Witzigmann

IEEE Journal of Quantum Electronics, 2002

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Low threshold InGaAs/GaAs 45 degrees folded cavity surface-emitting laser grown on structured substrates

Newton Frateschi

IEEE Photonics Technology Letters, 1993

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Temperature performance of 1.3-μm InGaAsP-InP lasers with different profile of p-doping

Serge Luryi

IEEE Photonics Technology Letters, 2000

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High quantum efficiency InP mesas grown by hybrid epitaxy on Si substrates

Dieter Bimberg

Journal of Crystal Growth, 1995

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The influence of InGaP barrier layer on the characteristics of 1.3 μm strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes

Wen-Jeng Ho

Solid-State Electronics, 2002

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Characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

Björn Stoltz

Journal of Crystal Growth, 2001

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Room Temperature InP DFB Laser Array Directly Grown on (001) Silicon

Marianna Pantouvaki

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Thermal resistance of 1.3μm InGaAsP vertical cavity lasers

Wenbin Jiang

Microwave and Optical Technology Letters, 1993

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Trends in semiconductor laser design: Balance between leakage, gain and loss in InGaAsP/InP MQW structures

Leon Shterengas

2002

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Chemical beam epitaxy growth of gainasp/inp and application to surface-emitting lasers

Fumio Koyama

Electronics and Communications in Japan (Part II: Electronics), 1993

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Morphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55mum laser applications

Angelo Gobbi

Brazilian Journal of Physics, 1999

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Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition

Yong Huang

2010

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InP-on-Si Optically Pumped Microdisk Lasers via Monolithic Growth and Wafer Bonding

Noelia Triviño

IEEE Journal of Selected Topics in Quantum Electronics, 2019

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UV laser induced selective-area bandgap engineering for fabrication of InGaAsP/InP laser devices

mohammad kaleem

Optics & Laser Technology, 2013

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Low-cost and high-performance 1.3-/spl mu/m AlGaInAs-InP uncooled laser diodes

Te Chin Peng

IEEE Photonics Technology Letters, 2006

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Temperature dependence of the threshold current for InGaAlP visible laser diodes

Kingo Itaya

… , IEEE Journal of, 1991

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