Molecular dynamics study of defect formation in GaN cascades (original) (raw)

Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN

Antti Kuronen

Journal of Applied Physics, 2012

View PDFchevron_right

Single and molecular ion irradiation-induced effects in GaN: experiment and cumulative MD simulations

Flyura Djurabekova

Journal of Physics D: Applied Physics, 2017

View PDFchevron_right

Defect clustering in irradiation of GaN by single and molecular ions

Antti Kuronen, F. Djurabekova, P. Karaseov

Vacuum, 2014

View PDFchevron_right

Molecular dynamics of irradiation-induced defect production in GaN nanowires

Antti Kuronen

Physical Review B, 2012

View PDFchevron_right

Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride

Paul Erhart

Journal of Physics: Condensed Matter, 2003

View PDFchevron_right

On the main irradiation-induced defect in GaN

Laura Polenta

Applied Physics Letters, 2000

View PDFchevron_right

Intrinsic Defect Properties in GaN Calculated By Ab Initio and Empirical Potential Methods

Eric Bylaska

Physical Review B, 2004

View PDFchevron_right

Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation

P. Karaseov, Flyura Djurabekova

Journal of Applied Physics, 2013

View PDFchevron_right

Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN

A. Guittoum

Physical Review B, 2010

View PDFchevron_right

RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN

Karolina Pagowska

Acta Physica Polonica A, 2011

View PDFchevron_right

Computics Approach toward Clarification of Atomic Reactions during Epitaxial Growth of GaN

Mauro Boero

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020

View PDFchevron_right

Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

Esmat Farzana

Journal of Applied Physics, 2015

View PDFchevron_right

A modified empirical potential for energetic calculations of planar defects in GaN

Joseph Kioseoglou

Computational Materials Science, 2003

View PDFchevron_right

Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs

P. Kluth

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006

View PDFchevron_right

Atomic assembly during GaN film growth: Molecular dynamics simulations

Dewey Murdick

Physical Review B, 2006

View PDFchevron_right

DLTS characterization of defects in GaN induced by electron beam exposure

ezekiel omotoso

Materials Science in Semiconductor Processing

View PDFchevron_right

Defect formation in GaN epitaxial layers due to swift heavy ion irradiation

Vikram Kumar

Radiation Effects and Defects in Solids, 2011

View PDFchevron_right

Direct evidence of N aggregation and diffusion in Au[sup +] irradiated GaN

Rodney C Ewing

Applied Physics Letters, 2006

View PDFchevron_right

An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN

Valerie Potin

Computational Materials Science, 2000

View PDFchevron_right

On the atomic structures, mobility and interactions of extended defects in GaN: dislocations, tilt and twin boundaries

antoine bere

Philosophical Magazine, 2006

View PDFchevron_right

Electronic stopping dependence of ion beam induced modifications in GaN

Anand Pathak

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2011

View PDFchevron_right

Low energy electron beam induced vacancy activation in GaN

Henri Nykänen

2012

View PDFchevron_right

Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

Takeshi Ohshima

Applied Physics Letters, 2014

View PDFchevron_right

Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN

Steven Denbaars

Journal of Vacuum Science & Technology B, 2001

View PDFchevron_right