Growth and characterization of Ge1− xSnx alloys grown by magnetron sputter deposition (original) (raw)

Ge1−xSnx alloys pseudomorphically grown on Ge(001)

Hugo Navarro

Applied Physics Letters, 2003

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Determination of the optical energy gap of Ge[sub 1−x]Sn[sub x] alloys with 0<x<0.14

Angel G Rodriguez, Miguel A Vidal

Applied Physics Letters, 2004

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GROWTH AND CHARACTERIZATION OF GE1-XSNX ALLOYS GROWN ON GE (001) AND GAAS (001) Superficies y vacío, Diciembre, año/vol. 17, número 004 …

Miguel Angel Vidal

redalyc.uaemex.mx

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Electronic band structure and effective mass parameters of Ge1-xSnx alloys

Kain Lu Low

Journal of Applied Physics, 2012

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Nonlinear behavior of the energy gap in Ge[sub 1−x]Sn[sub x] alloys at 4 K

Angel G Rodriguez, Miguel A Vidal

Applied Physics Letters, 2007

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Determination of the optical energy gap of Ge1−xSnx alloys with 00.14

Miguel Angel Vidal

Applied Physics Letters, 2004

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Structure of Sn1−xGex random alloys as obtained from the coherent potential approximation

Jiji Pulikkotil

Journal of Applied Physics, 2011

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Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

Pairot Moontragoon

Semiconductor Science and Technology, 2007

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Optical properties of pseudomorphic Ge1−xSnx(x = 0 to 0.11) alloys on Ge(001)

Alain Diebold

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014

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The two gap transitions in Ge1−xSnx: Effect of non-substitutional complex defects

Rafael Barrio

Journal of Applied Physics, 2016

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Non-substitutional Sn Defects in Ge1−x Sn x Alloys for Opto- and Nanoelectronics

Rafael Barrio

Journal of Superconductivity and Novel Magnetism, 2012

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Electronic structure and optical properties of Si 1− x Ge x alloys

Moncef SAID

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Sn-based Group-IV Semiconductors on Si: New Infrared Materials and New Templates for Mismatched Epitaxy

Radek Roucka

MRS Proceedings, 2005

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Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

Friedhelm Bechstedt

physica status solidi (b), 2002

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Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys

Detlev Grützmacher

ACS Photonics, 2015

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Electronic band structures of Ge1−xSnx semiconductors: A first-principles density functional theory study

Ming-Hsien Lee

Journal of Applied Physics, 2013

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Bandgap Tunability in Zn(Sn,Ge)N 2 Semiconductor Alloys

Sheraz Gul

Advanced Materials, 2014

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Ge[sub 1−x]Sn[sub x] alloys pseudomorphically grown on Ge(001)

Angel G Rodriguez, Miguel A Vidal

Applied Physics Letters, 2003

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Growth and Characterization of GaAs1-xNx Epitaxial Layers

Bernard Clerjaud

2008

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Strain and Band-Gap Engineering in Ge - Sn Alloys via P Doping

Rüdiger Schmidt-Grund

Physical Review Applied, 2018

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Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy

Daniel Schwarz

Journal of Electronic Materials, 2020

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Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

P. Brunkov, O. Rumyantsev

Semiconductors, 2010

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Nonsubstitutional single-atom defects in the Ge1−xSnx alloy

R. Barrio

Physical Review B, 2009

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Optical, structural investigations and band-gap bowing parameter of GaInN alloys

M. Heuken

Journal of Crystal Growth, 2009

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Measurement of the direct energy gap of coherently strained Sn[sub x]Ge[sub 1−x]/Ge(001) heterostructures

Regina Ragan

Applied Physics Letters, 2000

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Observation of A1(LO), E2(high) and B1(high) phonon modes in Inx Ga1-xN alloys with x = 0.11-0.54

Kenji Kisoda

Physica status solidi, 2011

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Optical critical points of thin-film Ge_ {1− y} Sn_ {y} alloys: A comparative Ge_ {1− y} Sn_ {y}∕ Ge_ {1− x} Si_ {x} study

Jose Menendez

Physical Review B, 2006

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Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys

José Menéndez

Solid-State Electronics, 2015

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Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%

Hameed Naseem

Journal of Electronic Materials, 2015

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Structural Property Study for GeSn Thin Films

Detlev Grützmacher

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Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys

Alex Zunger

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Optical absorption in alloys of Si, Ge, C, and Sn

Subramanian S Iyer

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Electronic properties calculation of Ge1−x−ySixSny ternary alloy and nanostructure

Pairot Moontragoon

Journal of Non-Crystalline Solids, 2012

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Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

Rüdiger Schmidt-Grund

Journal of Applied Physics, 2019

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Measurement of the direct energy gap of coherently strained SnxGe1–x/Ge (001) heterostructures

Regina Ragan

2000

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