original ) (raw )OPTICAL, STRUCTURAL, AND TRANSPORT PROPERTIES OF InN, InxGa1-xN ALLOYS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
NEELAM BAHADUR KHAN
2009
View PDFchevron_right
Band gaps and lattice parameters of 0.9 μm thick InxGa1−xN films for 0⩽x⩽0.140
James Turner
Journal of Applied Physics, 2002
View PDFchevron_right
Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
Friedhelm Bechstedt
physica status solidi (b), 2002
View PDFchevron_right
Alloy effects in Ga1−xInxN/GaN heterostructures
Gerald Bastard
Solid State Communications, 2004
View PDFchevron_right
Bulk lattice parameter and band gap of cubic InXGa1−XN (001) alloys on MgO (100) substrates
Angel G Rodriguez , Miguel A Vidal
Journal of Crystal Growth, 2015
View PDFchevron_right
Photoluminescence-linewidth-derived reduced exciton mass for In_ {y} Ga_ {1-y} As_ {1-x} N_ {x} alloys
Krishan Bajaj
Physical Review B, 2000
View PDFchevron_right
Molecular beam epitaxy of highly mismatched N-rich GaN1-xSbx and InN1-xAsx alloys
Z. Liliental-weber
Journal of Vacuum Science & Technology B, 2013
View PDFchevron_right
Compositional dependence of the strain-free optical band gap in In[sub x]Ga[sub 1−x]N layers
T. Monteiro
Applied Physics Letters, 2001
View PDFchevron_right
Small band gap bowing in In1−xGaxN alloys
Kin Yu
Applied Physics Letters, 2002
View PDFchevron_right
Structural and optical properties of an In x Ga 1− x N/GaN nanostructure
Suleyman Ozcelik
Surface Science, 2007
View PDFchevron_right
GaN, AlN, InN and Their Alloys
B. Gil , Christian Wetzel , M. Kuzuhara
View PDFchevron_right
Alloy effects in GaInN/GaN heterostructures
Gerald Bastard
View PDFchevron_right
Band-gap evolution, hybridization, and thermal stability of InxGa1-xN alloys measured by soft X-ray emission and absorption
Cormac McGuinness , Theodore Moustakas
Physical Review B, 2002
View PDFchevron_right
Phase separation of thick (∼1 µm) In x Ga 1− x N ( x ∼ 0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN
Tanvir Hasan
Applied Physics Express, 2014
View PDFchevron_right
Stokes Shift and Band Gap Bowing in InxGa1-xN (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy
Yildirim Aydogdu
Acta Physica Polonica A
View PDFchevron_right
Marked suppression of In incorporation in heavily Si-doped InxGa1−xN (x ∼ 0.3) grown on GaN/α-Al2O3(0001) template
Naoteru Shigekawa
Applied Physics Letters, 2013
View PDFchevron_right
Band gap bowing parameter in pseudomorphic Al x Ga1− x N/GaN high electron mobility transistor structures
R Muraalidharan
View PDFchevron_right
Lattice and energy band engineering in AlInGaN/GaN heterostructures
Asif Khan
Applied Physics Letters, 2000
View PDFchevron_right
Band-Gap Evolution, Hybridization and Thermal Stability of IN1-XGAXN Alloys Studied by Soft X-Ray Emission and Absorption
Philip Ryan
Phys Rev B, 2002
View PDFchevron_right
Influence of the N 2 /H 2 ratio on the structural features of In x Ga 1 − x N/GaN films grown by MOCVD
Massimo Catalano
View PDFchevron_right
Systematic theoretical investigations of compositional inhomogeneity in InxGa1−xN thin films on GaN(0001)
Toru Akiyama
Journal of Crystal Growth, 2007
View PDFchevron_right
Structure and electronic properties of InN and In-rich group III-nitride alloys
Z. Liliental-weber
Journal of Physics D: Applied Physics, 2006
View PDFchevron_right
Long range order in Al[sub x]Ga[sub 1−x]N films grown by molecular beam epitaxy
Theodore Moustakas
Applied Physics Letters, 1997
View PDFchevron_right
Microscopic parameters of materials containing GaN/AlN and InAs/AlAs heterostructures
Wim Bras
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment - NUCL INSTRUM METH PHYS RES A, 2005
View PDFchevron_right
Interplay between GaN and AlN sublattices in wurtzite AlxGa1-xN alloys revealed by Raman spectroscopy
Luis Enrique Valencia Monroy
Journal of Applied Physics, 2002
View PDFchevron_right
Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV
I. Demchenko
physica status solidi (c), 2010
View PDFchevron_right
Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire
P. Prystawko
Journal of Alloys and Compounds, 1999
View PDFchevron_right
First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide
Tarik Ouahrani
Materials Science in Semiconductor Processing, 2015
View PDFchevron_right