Frontiers of III-V Compounds and Devices 0,1 (original) (raw)

Profile image of Michael SchlechtwegMichael Schlechtweg

2004

Advanced III-V HEMT MMIC Technologies for Millimetre-Wave Applications

Euan Boyd

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Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications

Kartik Chandra Sahoo

IEEE Transactions on Electron Devices, 2010

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Studies of the DC, low-frequency, and microwave characteristics of uniform and step-doped GaAs/AlGaAs HEMTs

Jean-Louis Cazaux

IEEE Transactions on Electron Devices, 1989

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New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A

Jen-Inn Chyi

Materials Research Society eBooks, 2003

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50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz

David A. J. Moran

IEEE Electron Device Letters, 2000

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50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz

David A. J. Moran

Electron Device …, 2005

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Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density

T. Kazior

IEEE Electron Device Letters, 2000

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Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates

T. Kazior

IEEE Journal of Solid-State Circuits, 2000

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Monolithic HEMT-HBT integration for novel microwave circuit applications

Kevin Kobayashi

Proceedings of 1994 IEEE GaAs IC Symposium

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InP-based HEMTs for the realization of ultra-high efficiency millimeter wave power amplifiers

Wilbur Lam

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1993

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Heterostructure-based high-speed/high-frequency electronic circuit applications

P. Zampardi

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Hemt structures and technology on GAAS and inp for power amplification in millimetre wave range

Sylvain Bollaert

2001

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Millimeter-wave GaN-based HEMT development at ETH-Zürich

Haifeng Sun

International Journal of Microwave and Wireless Technologies, 2010

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DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application

International Journal of Electrical and Computer Engineering (IJECE)

International Journal of Electrical and Computer Engineering (IJECE), 2020

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Millimeter wave InP HEMT technology: Performance and applications

Takyiu Liu

Solid-state Electronics, 1995

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Integrated Circuits Based on 300 GHz fT Metamorphic HEMT Technology for Millimeter-Wave and Mixed-Signal Applications

Michael Schlechtweg

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The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter

Sylvain Bollaert

Solid-State Electronics, 2000

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DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Kei Lau

IEEE Transactions on Electron Devices, 2000

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Low-frequency noise behavior of InP-based HEMTs and its connection with phase noise of microwave oscillators

O. Llopis

1996 IEEE MTT-S International Microwave Symposium Digest, 1996

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Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs

Y. Cordier

Electronics Letters, 1999

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Current Status of Millimeter-Wave Transistor Technology

Bumman Kim

2004

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DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

Dr.S. Ravimaran AI&DS

AEU - International Journal of Electronics and Communications, 2017

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The Present and Future Trends in High Power Microwave and Millimeter Wave Technologies

Qamar Ul Wahab

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220GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

jai verma

IEEE Electron Device Letters, 2011

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RF & Logical performance InAs based DMG HEMT high speed & high power application

Sridharan Perumal

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Investigation of RF and DC Performance of E-Mode In0.80Ga0.20As/InAs/In0.80Ga0.20as Channel based DG-HEMTs for Future Submillimetre Wave and THz Applications

J Ajayan

IETE Journal of Research, 2018

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