Change in the electronic properties of an InAs (111)A surface at oxygen and fluorine adsorption (original) (raw)

Study of Surface Stability and Electronic Structure of a Bi-terminated InAs (001) Surface Based on Ab Initio Calculations

Ahmed Rebey

Journal of Electronic Materials, 2021

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Interaction between oxygen and InAs(1 1 1) surfaces, influence of the electron accumulation layer

karolina szamota-leandersson

Applied Surface Science, 2003

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Atomic structure and electronic properties of the cleavage InAs (110) surface

Cecilia Noguez

Arxiv preprint cond-mat/ …, 2003

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Adsorption of Cs on InAs(111) surfaces

karolina szamota-leandersson

Applied Surface Science, 2006

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Bi-covered InAs(110) surfaces: An ab initio study

Eduardo Takahashi

Surface Science, 2004

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Initial stages of the autocatalytic oxidation of the InAs(001)-(4×2)/c(8×2) surface by molecular oxygen

Darby Feldwinn

Surface Science, 2009

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Chlorine adsorption on the InAs (001) surface

Sergey Eremeev

Semiconductors, 2011

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Electron accumulation layer on clean In-terminated InAs(001)(4×2)-c(8×2) surface

K. Hricovini

Surface Science, 2001

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Early Stages of Halogen Adsorption on Cation-Rich InAs(001): Surface Etching Mechanism

Sergey Eremeev

The Journal of Physical Chemistry C, 2014

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New electronic surface states on In-terminated InAs(001)4×2-c(8×2) clean surface

K. Hricovini

Surface Science - SURFACE SCI, 2003

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Atomic structure and energetic stability of the Bi-covered InAs(110) surface

Eduardo Takahashi

Brazilian Journal of Physics, 2004

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Adsorption of indium on an InAs wetting layer deposited on the GaAs(001) surface

Rita Magri

Physical Review B, 2008

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Structure of the In-rich InAs (001) surface

Jacek Kolodziej

Surface Science, 2012

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Surface Preparation of InAs (110) Using Atomic Hydrogen

Salim Al-Harthi

2002

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Effect of surface reconstruction on the low-temperature oxidation of InAs(100): Optical investigations

yves borensztein

Physical Review B, 2001

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Chemical and electronic properties of sulfur-passivated InAs surfaces

Dmitri Petrovykh

Surface Science, 2003

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Electronic and optical properties of InAs (110)

Cecilia Noguez

Arxiv preprint cond-mat/ …, 2003

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Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle‐Resolved Photoemission Spectroscopy

Peter Krogstrup

Advanced Quantum Technologies, 2022

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Near-surface electronic structure on InAs (100) modified with self-assembled monolayers of alkanethiols

Laura Greene

1999

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Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

F. Wiame

Applied Physics Letters, 2003

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Co on p-InAs(110): An island-induced two-dimensional electron system consisting of electron droplets

Markus Morgenstern

Physical Review B, 2002

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STM measurements on the InAs(110) surface directly compared with surface electronic structure calculations

Roland Wiesendanger

Physical Review B, 2003

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Origin of surface and subband states at the InAs(111)A surface

Peter Krogstrup

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Surface structure and morphology of InAs(111)B with/without gold nanoparticles annealed under arsenic or atomic hydrogen flux

Edvin Lundgren

Surface Science, 2010

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In-rich (4×2) and (2×4) reconstructions of the InAs(001) surface

R. Miwa

Surface Science, 2003

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Surface states resonance on In-terminated InAs(0 0 1)4 × 2-c(8 × 2) clean surface

K. Hricovini

Applied Surface Science, 2003

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Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

Muhammad Yasir

Applied Physics Letters, 2015

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Core level photoemission from (111)-type InAs surfaces

J. Kanski

Le Journal de Physique IV, 1994

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Profiling of electron accumulation layers in the near-surface region of InAs (110)

C. McConville

Physical Review B, 2001

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Electronic structure of bismuth terminated InAs(100)

karolina szamota-leandersson

Surface Science, 2009

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Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces

A. Balzarotti

Surface Science, 2005

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Two-dimensional electron gas formed on the indium-adsorbedSi(111)3×3-Ausurface

ks kim

Physical Review B, 2009

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