Change in the electronic properties of an InAs (111)A surface at oxygen and fluorine adsorption (original) (raw)
Related papers
Journal of Electronic Materials, 2021
Interaction between oxygen and InAs(1 1 1) surfaces, influence of the electron accumulation layer
Applied Surface Science, 2003
Atomic structure and electronic properties of the cleavage InAs (110) surface
Arxiv preprint cond-mat/ …, 2003
Adsorption of Cs on InAs(111) surfaces
Applied Surface Science, 2006
Bi-covered InAs(110) surfaces: An ab initio study
Surface Science, 2004
Surface Science, 2009
Chlorine adsorption on the InAs (001) surface
Semiconductors, 2011
Electron accumulation layer on clean In-terminated InAs(001)(4×2)-c(8×2) surface
Surface Science, 2001
Early Stages of Halogen Adsorption on Cation-Rich InAs(001): Surface Etching Mechanism
The Journal of Physical Chemistry C, 2014
New electronic surface states on In-terminated InAs(001)4×2-c(8×2) clean surface
Surface Science - SURFACE SCI, 2003
Atomic structure and energetic stability of the Bi-covered InAs(110) surface
Brazilian Journal of Physics, 2004
Adsorption of indium on an InAs wetting layer deposited on the GaAs(001) surface
Physical Review B, 2008
Structure of the In-rich InAs (001) surface
Surface Science, 2012
Surface Preparation of InAs (110) Using Atomic Hydrogen
2002
Physical Review B, 2001
Chemical and electronic properties of sulfur-passivated InAs surfaces
Surface Science, 2003
Electronic and optical properties of InAs (110)
Arxiv preprint cond-mat/ …, 2003
Advanced Quantum Technologies, 2022
1999
Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments
Applied Physics Letters, 2003
Co on p-InAs(110): An island-induced two-dimensional electron system consisting of electron droplets
Physical Review B, 2002
Physical Review B, 2003
Origin of surface and subband states at the InAs(111)A surface
Physical Review Materials
Surface Science, 2010
In-rich (4×2) and (2×4) reconstructions of the InAs(001) surface
Surface Science, 2003
Surface states resonance on In-terminated InAs(0 0 1)4 × 2-c(8 × 2) clean surface
Applied Surface Science, 2003
Applied Physics Letters, 2015
Core level photoemission from (111)-type InAs surfaces
Le Journal de Physique IV, 1994
Profiling of electron accumulation layers in the near-surface region of InAs (110)
Physical Review B, 2001
Electronic structure of bismuth terminated InAs(100)
Surface Science, 2009
Surface Science, 2005
Two-dimensional electron gas formed on the indium-adsorbedSi(111)3×3-Ausurface
Physical Review B, 2009