Interaction between oxygen and InAs(1 1 1) surfaces, influence of the electron accumulation layer (original) (raw)

Effect of surface reconstruction on the low-temperature oxidation of InAs(100): Optical investigations

yves borensztein

Physical Review B, 2001

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Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

Muhammad Yasir

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Initial stages of the autocatalytic oxidation of the InAs(001)-(4×2)/c(8×2) surface by molecular oxygen

Darby Feldwinn

Surface Science, 2009

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Core level photoemission from (111)-type InAs surfaces

J. Kanski

Le Journal de Physique IV, 1994

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Optical anisotropy of oxidized InAs() surfaces

S. Almaviva

Surface Science, 2002

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Electron accumulation layer on clean In-terminated InAs(001)(4×2)-c(8×2) surface

K. Hricovini

Surface Science, 2001

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Change in the electronic properties of an InAs (111)A surface at oxygen and fluorine adsorption

Sergey Eremeev

Semiconductors, 2012

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Structure of the In-rich InAs (001) surface

Jacek Kolodziej

Surface Science, 2012

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Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces

A. Balzarotti

Surface Science, 2005

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Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle‐Resolved Photoemission Spectroscopy

Peter Krogstrup

Advanced Quantum Technologies, 2022

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New electronic surface states on In-terminated InAs(001)4×2-c(8×2) clean surface

K. Hricovini

Surface Science - SURFACE SCI, 2003

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In-rich (4×2) and (2×4) reconstructions of the InAs(001) surface

R. Miwa

Surface Science, 2003

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Profiling of electron accumulation layers in the near-surface region of InAs (110)

C. McConville

Physical Review B, 2001

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Atomic structure and electronic properties of the cleavage InAs (110) surface

Cecilia Noguez

Arxiv preprint cond-mat/ …, 2003

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Study of Surface Stability and Electronic Structure of a Bi-terminated InAs (001) Surface Based on Ab Initio Calculations

Ahmed Rebey

Journal of Electronic Materials, 2021

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Coverage dependence of the Fe-induced Fermi-level shift and the two-dimensional electron gas on InAs(110)

Markus Morgenstern

Physical Review B, 2000

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Core level and valence-band studies of the (111)2×2 surfaces of InSb and InAs

Janusz Kanski

Physical Review B, 1996

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Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study

K. Hricovini

New Journal of Physics

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Bi-covered InAs(110) surfaces: An ab initio study

Eduardo Takahashi

Surface Science, 2004

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Atomic structure and energetic stability of the Bi-covered InAs(110) surface

Eduardo Takahashi

Brazilian Journal of Physics, 2004

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Origin of surface and subband states at the InAs(111)A surface

Peter Krogstrup

Physical Review Materials

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STM measurements on the InAs(110) surface directly compared with surface electronic structure calculations

Roland Wiesendanger

Physical Review B, 2003

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Surface states resonance on In-terminated InAs(0 0 1)4 × 2-c(8 × 2) clean surface

K. Hricovini

Applied Surface Science, 2003

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Correlated development of a (2×2) reconstruction and a charge accumulation layer on the InAs(111)–Bi surface

karolina szamota-leandersson

Surface Science, 2011

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Electronic and optical properties of InAs (110)

Cecilia Noguez

Arxiv preprint cond-mat/ …, 2003

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Surface Preparation of InAs (110) Using Atomic Hydrogen

Salim Al-Harthi

2002

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Atomic scale structure of InAs()-(2×4) steady-state surfaces determined by scanning tunneling microscopy and density functional theory

Robert Ross

Surface Science, 2002

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Photoemission study of a thin epitaxial InAs layer on InP(001)

J. Kanski

Applied Surface Science, 1992

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Co on p-InAs(110): An island-induced two-dimensional electron system consisting of electron droplets

Markus Morgenstern

Physical Review B, 2002

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Reaction of I2 with the (001) surfaces of GaAs, InAs, and InSb. I. Chemical interaction with the substrate

J. Kanski

Physical review. B, Condensed matter, 1996

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