Profiling of electron accumulation layers in the near-surface region of InAs (110) (original) (raw)

Surface Preparation of InAs (110) Using Atomic Hydrogen

Salim Al-Harthi

2002

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Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces

A. Balzarotti

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Surface modification of InAs(110) surface by low energy ion sputtering

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Electron accumulation layer on clean In-terminated InAs(001)(4×2)-c(8×2) surface

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Accumulation layer profiles at InAs polar surfaces

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Atomic structure and electronic properties of the cleavage InAs (110) surface

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STM measurements on the InAs(110) surface directly compared with surface electronic structure calculations

Roland Wiesendanger

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Coverage dependence of the Fe-induced Fermi-level shift and the two-dimensional electron gas on InAs(110)

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Electronic and optical properties of InAs (110)

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New electronic surface states on In-terminated InAs(001)4×2-c(8×2) clean surface

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Effect of surface reconstruction on the low-temperature oxidation of InAs(100): Optical investigations

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Near-surface electronic structure on InAs (100) modified with self-assembled monolayers of alkanethiols

Laura Greene

1999

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Surface structure and morphology of InAs(111)B with/without gold nanoparticles annealed under arsenic or atomic hydrogen flux

Edvin Lundgren

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Thickness-dependent valence-band photoemission from thin InAs and GaAs films

Janusz Kanski

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Study of Surface Stability and Electronic Structure of a Bi-terminated InAs (001) Surface Based on Ab Initio Calculations

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Electrical characterization of thin InAs films grown on patterned W∕GaAs substrates

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Structure and Energetic of GaAs:Te and InAs:Te Surfaces

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Interaction between oxygen and InAs(1 1 1) surfaces, influence of the electron accumulation layer

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Electronic properties of low- Σ grain boundaries in InAs

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X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

Thomas Kuech

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Atomic structure and energetic stability of the Bi-covered InAs(110) surface

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Brazilian Journal of Physics, 2004

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Low-Temperature Growth of InAs on Glass and Plastic Film Substrates by Molecular-Beam Deposition

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RHEED and STM study of the two-dimensional growth of InAs on GaAs (111)A

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Correlated development of a (2×2) reconstruction and a charge accumulation layer on the InAs(111)–Bi surface

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Bi-covered InAs(110) surfaces: An ab initio study

Eduardo Takahashi

Surface Science, 2004

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Origin of surface and subband states at the InAs(111)A surface

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Wetting layer evolution in InAs/GaAs() heteroepitaxy: effects of surface reconstruction and strain

Paul Joyce

Surface Science, 2002

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Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering

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Chemical and electronic properties of sulfur-passivated InAs surfaces

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Optical anisotropy of oxidized InAs() surfaces

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AES, LEED and PYS investigation of Au deposits on InSe/Si(111) substrate

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Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states

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GaAs and InP surface behaviour under ion bombardment, alkali deposition and oxygen exposure

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Core level photoemission from (111)-type InAs surfaces

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