High Power, Single Stage SiGaN HEMT Class E Power Amplifier at GHz Frequencies (original) (raw)
Related papers
3.5-3.8GHz class-E balanced GaN HEMT power amplifier with 20W Pout and 80% PAE
IEICE Electronics Express, 2013
In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized for 3.5-3.8 GHz band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations were made on low loss Rogers RT5880 dielectric material which has 0.254 mm thickness and 2.2 dielectric constant. Proposed balanced class-E PA has approximately 20 W (43 dBm) output power with 80% peak power added efficiency (PAE) and shows a very favorable combination of output power, PAE and suppressed even order harmonics compared to the single ended class-E PA prototype.
A 1GHZ CLASS E POWER AMPLIFIER FOR WIRELESS APPLICATIONS
In this paper, a class E power Amplifier (PA) suitable for wireless applications (Wi-Max, cellular phones, cordless phones etc,) is proposed by using the device of RF3931GaN HEMT (Gallium Nitrate High Electron Mobility Transistor).The proposed class E power Amplifier for achieving high output power and increasing gain up to 14.327dB and operates in the frequency range of 1GHz. The designed Power Added Efficiency (PAE) is 64% after optimization and the maximum source power achieved is 32dBw.
High-Efficiency Amplifiers Using AlGaN/GaN HEMTs on SiC
2006
GaN HEMTs on SiC are applied to high-efficiency power amplifier designs. Several class-E hybrid power amplifiers based on the GaN HEMT cell were designed and tested. Around 2 GHz, the first amplifier provides 10 watts CW with associated PAE of 85% and gain of 12 dB. Other higher frequency designs with the same transistor cell provide 10 watts and 80% PAE centered around 2.8 GHz and also 10 watts and 76% PAE centered around 3.4 GHz. Also, a larger-periphery class-E amplifier operating at 2 GHz with a peak power of 63 watts and 75% PAE has been demonstrated using GaN HEMT technology.
A High Efficiency Class AB AlGaN/GaN HEMT Power Amplifier for High Frequency Applications
Medicon Engineering Themes
GaN HEMT is chosen for many high frequency applications such as Power Amplifiers because of its desirable properties. Most semiconductors fail at high frequency applications because of their thermal and bias limitations. It's very difficult to operate the amplifier at high frequency and high power ratings. The HEMT transistors can operate at high electric fields and high frequencies. The heterojunction structure provides more no of free electrons without any doping which significantly improves the mobility and the current. The heterostructure also blocks the current flow in unwanted directions. This paper explains about GaN HEMT transistor and its practical application as a Power Amplifier. CREE CGH40010F GaN (10 W) device is chosen and developed at the schematic level. The schematic provides 15.5 dB gain and 66% efficiency.
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007
This paper introduces a new highly efficient broadband monolithic class-E power amplifier utilizing a single 0.25 um x 800 um AlGaN/GaN field-plated HEMT producing 8 W/mm of power at 10.0 GHz. The HPA utilizes a novel distributed broadband class-E load topology to maintain a simultaneous high PAE and output Power over (6-12 GHz). The HPA's peak PAE and output power performance measured under three pulsed drain voltages at 7.5 GHz are: (67%, 36.8 dBm @ 20 V), (64%, 37.8 dBm @ 25 V) and (58%, 38.3 dBm @ 30 V). The new broadband load also provides a spectrally pure output power response under CW and pulsed modulated RF input conditions. The HPA spurious free performance is evident from its low AM and PM noise figures of <-125 dBc at 10 KHz from carrier and <-130 dBc at 15 KHz from 10 GHz respectively. To the best of our knowledge, this is the highest ever reported performance for a high power, 6-12 GHz GaN class-E power amplifier.
Design of a High Efficient S-Band RF Power Amplifier with Hemt Process
In this paper we present design of a high efficient (Radio Frequency) RF Power Amplifier (PA) with gallium-nitride (GaN) high electron mobility transistor (HEMT) die for the operating frequency in S-Band. The device shows output power about 42.3 dBm with a high linear gain of 27 and Power Added Efficiency (PAE) of 65% in frequency range of 2.29 GHz. The proposed RF PA works with 28 V drain bias voltage and has been implemented with Rogers PCB. The simulation results show the implemented RF power amplifier has high power capability covering practical frequency range for S-band high power millimeter wave applications.
Analysis and Design a 2.5 GHz Class-E Power Amplifier in Two Configurations
There are two circuit configurations that commonly used for Class-E power amplifiers, the Infinite DC-feed or Shunt capacitor configuration and the Finite DC-feed or Shunt inductor. Albeit these circuit configurations are not essentially different, however they show different behavior and performance. In this paper we have compared these Class-E configurations at 2.5 GHz. For this purpose, we have designed two class-E circuits, one with Infinite DC-feed configuration and the other with Shunt inductor configuration. We have used the GaN High Electron Mobility Transistor (HEMT) in both designs. Optimized simulations showed 69% drain efficiency, 64% PAE, and 21.46 dBm load power, in the case of Infinite DC-feed design and 71% efficiency, 64.5% PAE, and 15.93 dBm load power in the case of Shunt inductor design. It is obvious that we should consider the importance of PAE inhigh power circuits and the importance of DE in low power circuits. The results propose that Infinite DC-feed design...
A 2.469-2.69GHz AlGaN/GaN HEMT power amplifier for IEEE 802.16e WiMAX applications
2008
This paper presents a 2.469~2.69GHz AlGaN/GaN HEMT power amplifier for IEEE 802.16e WiMAX applications operating at E mode under a single supply of +6v. At the central frequency point, the power added efficiency (PAE) can achieve 96.37%, the small signal gain is 20.81dB, and the output power is 25.39dBm. The paper describes the circuit design in detail, then shows the simulation results and discusses about the simulation results. In the end, the paper concludes the design.
A high-efficiency HBT-based class-E power amplifier for 2 GHz
2005
A Class-E power amplifier (PA) based on a GaAs heterojunction bipolar transistor (HBT) is presented. The single-ended single-stage PA delivers 24 dBm of output power at 2 GHz, achieves a peak power added efficiency (PAE) of 68% and exhibits an excellent transducer power gain higher than 16 dB. The PAE remains high over a wide output power range. The circuit
Design of a high efficiency GaN-HEMT RF power amplifier
2015
This paper presents the design and implementation of a GaN-HEMT, c1ass-J power amplifier suitable for cognitive radio transceivers, i. e., which presents high-efficiency and wideband characteristics, being these maintained for large load variations. Simulation results are presented which show large signal measurement results of 30 dB gain with 60%-76% power added efficiency (PAE) over a band of 1.3-2.3 GHz. Adaptivity to load changes is being developed to ensure PAE above 70% for large load variations.