Microstructure and reliability of copper interconnects (original) (raw)

Grain Size And Cap Layer Effects On Electromigration Reliability Of Cu Interconnects: Experiments And Simulation

Shinichi Ogawa

2010

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Electromigration Lifetime Improvement of Copper Interconnect by Cap/Dielectric Interface Treatment and Geometrical Design

Michael Brian Yeh

IEEE Transactions on Electron Devices, 2005

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Microstructural and surface effects on electromigration failure mechanism in Cu interconnects

Alexander Palevski

Microelectronics Reliability, 1997

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Effect of low k dielectrics on electromigration reliability for Cu interconnects

SEAN YOON

Materials Science in Semiconductor Processing, 2004

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12. Electromigration in damascene copper interconnects of line width down to 100 nm

Dr. Arijit Roy

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X-ray microdiffraction study of Cu interconnects

Zhong-hou Cai

Applied Physics Letters, 2000

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Electromigration failure in ultra-fine copper interconnects

Choong-un Kim

Journal of Electronic Materials, 2003

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Effect of microstructure on electromigration kinetics in Cu lines

Yuri Kaganovskii

Journal of Physics D: Applied Physics, 1998

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Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

Hans-Juergen Engelmann, Ehrenfried Zschech

Applied Physics Letters, 2007

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Electromigration resistance of copper interconnects

Francois Braud

Microelectronic Engineering, 1997

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Microstructures of 50-nm Cu Interconnects along the Longitudinal Direction

Haruo Akahoshi

MATERIALS TRANSACTIONS, 2007

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Electromigration Reliability Comparison of Cu and Al Interconnects

Syed Alam

Sixth International Symposium on Quality of Electronic Design (ISQED'05), 2005

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Electromigration Cu mass flow in Cu interconnections

Andrew Simon

Thin Solid Films, 2006

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Analysis of grain-boundary structure in Al–Cu interconnects

John Sanchez

Journal of Applied Physics, 1997

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Damage mechanics of electromigration in microelectronics copper interconnects

Cemal Basaran

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Electromigration Characteristics and Morphological Evolution of Cu Interconnects on CVD Co and Ru Liners for 10-nm Class VLSI Technology

Sekwon Na

IEEE Electron Device Letters, 2018

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Electromigration in width transition copper interconnect

Arijit Roy

Microelectronics Reliability, 2009

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Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/Low-k interconnects

Cher Ming Tan

Microelectronics Reliability, 2010

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Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications

Dung Cong

Microelectronic Engineering, 2000

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Current Challenges with Copper Interconnects

Paul Besser

ECS Transactions, 2007

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Improvement of Electromigration Lifetime of Submicrometer Dual-Damascene Cu Interconnects Through Surface Engineering

Ehrenfried Zschech

Journal of The Electrochemical Society, 2006

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Stress‐Induced Anisotropy of Electromigration in Copper Interconnects

Johann Cervenka

2009

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Large-Scale Electromigration Statistics for Cu Interconnects

Richard Soto Hernandez

MRS Proceedings, 2009

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Electromigration of Cu-Sn-Cu micropads in 3D interconnect

Ritwik Chatterjee

2008

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Effect of integrated anneal optimizations of electroplated Cu thin films interconnects

Omid Akbarzadeh Pivehzhani

Elsevier, 2020

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Barrier/seed layer requirements for copper interconnects

Alvin Loke

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102), 1998

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Reservoir effect on electromigration mechanisms in dual-damascene Cu interconnect structures

Ehrenfried Zschech

Microelectronic Engineering, 2005

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Electromigration of Cu interconnects under AC and DC test conditions

Robert Keller

Microelectronic Engineering, 2012

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Void nucleation and growth during electromigration in 30 nm wide Cu lines: Impact of different interfaces on failure mode

Kris Vanstreels

2013 IEEE International Interconnect Technology Conference - IITC, 2013

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