Microelectronics Reliability 47 2007 657-659 (original) (raw)
Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM
A. Baturin
Microelectronics Reliability, 2007
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Analysis of the degradation of HfO2/SiO2 gate stacks using nanoscale and device level techniques
Marc Porti
Microelectronic …, 2007
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The Degradation Process of High- krmSiO˜2/rmHfO2k~{\rm SiO}_{2}/{\rm HfO}_{2}krmSiO˜2/rmHfO2 Gate-Stacks: A Combined Experimental and First Principles Investigation
Stefan Slesazeck
IEEE Transactions on Electron Devices, 2014
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Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
Esteve Amat
Microelectronics Reliability, 2007
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Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics
Sunil Singh Kushvaha
Microelectronic Engineering, 2013
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Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films
David Gao
2018 IEEE International Reliability Physics Symposium (IRPS)
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Electronic excitation induced defect dynamics in HfO2based MOS devices investigated byin-situelectrical measurements
Anand Pathak
Applied Physics Letters, 2018
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Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM
Ramesh Thamankar
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2012
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An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2 dielectric stacks for failure analysis
Ramesh Thamankar
Microelectronics Reliability
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Characterization of the hot-electron-induced degradation in thin SiO2 gate oxides
Eduard Cartier
Microelectronics Reliability, 1998
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A Novel Approach in Separating the Roles of Electrons and Holes in Causing Degradation in Hf-Based MOSFET Devices by Using Stress-Anneal Technique
Jack Le
IEEE Electron Device Letters, 2007
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An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis
Yee Chong Loke
Microelectronics Reliability, 2015
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Complete band offset characterization of the HfO[sub 2]/SiO[sub 2]/Si stack using charge corrected x-ray photoelectron spectroscopy
Gert Leusink
Journal of Applied Physics, 2010
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Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks
Karim Cherkaoui
Microelectronics Reliability, 2007
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Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks
Piyas Samanta
Microelectronics Reliability, 2010
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MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si
Leonard Trombetta
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006
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Silicon surface passivation using thin HfO2 films by atomic layer deposition
Neha Batra
Applied Surface Science, 2015
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Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film
Takuji Hosoi
Applied Physics Letters, 2011
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A New Methodology for Characterizing the Progressive BD of Hfo2/Sio2 Metal Gate Stacks
Gennadi Bersuker
ECS Transactions, 2008
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Degradation and Breakdown of Gate Oxides in VLSI Devices
Jordi Suñe
Physica Status Solidi (a), 1989
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Process-Induced Degradation of SiO2 and a-Si:H Passivation Layers for Photovoltaic Applications
Nadupalli Shankari
IEEE Journal of Photovoltaics, 2014
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Defect generation and activation processes in HfO 2 thin films: Contributions to stress-induced leakage currents
E. Nadimi
physica status solidi (a), 2015
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High-field-induced degradation in ultra-thin SiO/sub 2/ films
Bruno Riccò
IEEE Transactions on Electron Devices, 1988
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The effect of interfacial layer properties on the performance of Hf-based gate stack devices
Chadwin Young
Journal of Applied Physics, 2006
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Annealing behavior of atomic layer deposited HfO2 films studied by synchrotron x-ray reflectivity and grazing incidence small angle scattering
Jan Ilavsky
Journal of Applied Physics, 2009
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Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks
S. Bernardini, Tony Peaker
Microelectronic Engineering, 2007
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Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing
G. Aygun
Thin Solid Films, 2010
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The role of localized states in the degradation of thin gate oxides
Alexander Bagaturyants
Microelectronic Engineering, 2003
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