Near-Bandgap Infrared Absorption Properties of HgCdTe (original) (raw)

Spectra analysis of annealed Hg[sub 1−x]Cd[sub x]Te molecular beam epitaxial films

Yong Chang

Applied Physics Letters, 1998

View PDFchevron_right

Far-infrared reflectivity study of lattice dynamics of narrow-gap HgCdMnTe semiconductors

georgiy tarasov

Semiconductor Science and Technology, 1999

View PDFchevron_right

In-Situ monitoring of temperature and alloy composition of Hg 1−x Cd x Te using FTIR spectroscopic techniques

Saroj Rujirawat

Journal of Electronic Materials, 1999

View PDFchevron_right

Far-infrared reflectivity as a probe of point defects in Zn- and Cd-doped HgTe

J. Cebulski, J. Polit, Eugen M I C H A L Sheregii

Applied Physics Letters, 2008

View PDFchevron_right

Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail

Silviu Velicu

Journal of Electronic Materials, 2007

View PDFchevron_right

Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg 1−x Cd x Te grown by molecular beam epitaxy

Sandeep Chandril

Journal of Electronic Materials, 2006

View PDFchevron_right

Photo-electronic phenomena in narrow gap Hg1−xCdxTe

Yong Chang

Current Applied Physics, 2002

View PDFchevron_right

Far infrared characterization of Hg1-xCdxTe and related electronic materials

S. Perkowitz

Journal of Electronic Materials, 1985

View PDFchevron_right

Composition and temperature-induced effects on the phonon spectra of narrow-band-gapHg1−xCdxTe

Shyama Rath

Physical Review B, 1995

View PDFchevron_right

Additional phonon modes related to intrinsic defects in CdHgTe

J. Cebulski, J. Polit, Eugen M I C H A L Sheregii

physica status solidi (c), 2009

View PDFchevron_right

Comparative study of Hg x Cd 1− x Te films grown on CdTe thin films previously deposited from two different techniques

nazar abbas

Journal of Crystal Growth, 2009

View PDFchevron_right

Optical absorption properties of HgCdTe epilayers with uniform composition

Jonathan Phillips

Journal of Electronic Materials, 2003

View PDFchevron_right

Free-carrier absorption of Hg1−xCdxTe epitaxial films

Yong Chang

Journal of Applied Physics, 1996

View PDFchevron_right

Spectra analysis of annealed Hg1-xCdxTe molecular beam epitaxial films. [Erratum to document cited in CA129:267213]

Yong Chang

Applied Physics Letters

View PDFchevron_right

Evolution of infrared photoreflectance lineshape with temperature in narrow-gap HgCdTe epilayers

Wei Lu

Applied Physics Letters, 2008

View PDFchevron_right

Hg(1-x)CdxTe from short to long wave infrared on Si substrates grown by MBE

D. Lofgreen, mauro vilela

physica status solidi (c), 2010

View PDFchevron_right

Molecular beam epitaxy of Hg1−xCdxTe: Growth and characterization

Jean-Pierre FAURIE

Progress in Crystal Growth and Characterization of Materials, 1994

View PDFchevron_right

Intrinsic Carrier Concentrations in Long Wavelength HgCdTe Based on the New, Nonlinear Temperature Dependence of Eg( x,T)

Judith Meddick

MRS Proceedings, 1990

View PDFchevron_right

Molecular beam epitaxial growth and characterization of 2-in.-diam Hg1−xCdxTe films on GaAs (100) substrates

Bình Lê

Applied Physics Letters, 1988

View PDFchevron_right

Fundamental materials studies of undoped, In-doped, and As-doped Hg1−xCdxTe

M. Berding

Journal of Electronic Materials, 2004

View PDFchevron_right

ELECTRON TRANSFER IN Hg 1-x Cd x Te-CdTe HETEROSTRUCTURES

YVES GULDNER

Le Journal de Physique Colloques, 1987

View PDFchevron_right

DFT and TB-mBJLDA studies of structural, electronic and optical properties of Hg1-xCdxTe and Hg1-xZnxTe

M.Hocine TEDJINI

Revista Mexicana de Física, 2021

View PDFchevron_right

Band Discontinuity and Band Gap of MBE Grown HgTe/CdTe(001) Heterointerfaces Studied by k-Resolved Photoemission and Inverse Photoemission

Rainer Fink

physica status solidi (a), 1999

View PDFchevron_right

Growth and optical properties of graded band-gap CdHgTe and CdMnHgTe structures

Petro Fochuk

physica status solidi (c), 2006

View PDFchevron_right

Band gap controlled H loss from passivated Hg1−xCdxTe (MCT) wafers under intense electronic excitations

Anand Pathak

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2011

View PDFchevron_right

Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors

Yong Chang, S. Sivananthan

Infrared Physics & Technology, 2007

View PDFchevron_right

Thermal annealing impact on the properties of CdxHg1-xTe epitaxial layers with anodic oxidation

Shikhamir Eminov

Proceedings of SPIE - The International Society for Optical Engineering

View PDFchevron_right

Long-term room-temperature relaxation of the defects induced in (Hg,Cd)Te by low-energy ions

M. Pociask

Physica B: Condensed Matter, 2009

View PDFchevron_right

Interrelations between defects in the Hg1−xCdxTe epilayers and their measured lattice parameters and composition

N. Mainzer

Journal of Electronic Materials, 1999

View PDFchevron_right

Observation of deep levels in Hg1−xCdxTe with optical modulation spectroscopy

D. Polla

Applied Physics Letters, 1982

View PDFchevron_right

Characterization of deep defects in Cd x Hg 1 x Te by injection-level spectroscopy of carrier lifetime

V. Gnatyuk

Semiconductor Science and Technology, 2002

View PDFchevron_right

Liquid-Phase Epitaxy of Hg1−xCdxTe from Hg Solution: A Route to Infrared Detector Structures

Tse Tung

MRS Proceedings, 1986

View PDFchevron_right

Below band-gap photoluminescence of Hg1−xCdxTe

D. Polla

Applied Physics Letters, 1984

View PDFchevron_right

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

mauro vilela

Journal of Electronic Materials, 2005

View PDFchevron_right

HgTe/HgCdTe superlattices grown on CdTe/Si by molecular beam epitaxy for infrared detection

Yong Chang

Journal of Electronic Materials, 2004

View PDFchevron_right