Performance improvement of 650nm band AlGaInP laser diodes with optimal diffusion barriers (original) (raw)

Investigation of Zn diffusion by SIMS and its effects on the performance of AlGaInP-based red lasers

영준 신

Semiconductor Science and Technology, 2006

View PDFchevron_right

Combined Mg/Zn p-type doping for AlGaInP laser diodes

Frank Bugge

Journal of Crystal Growth, 2015

View PDFchevron_right

Low-threshold laterally oxidized GaInP-AlGaInP quantum-well laser diodes

Ala'a Din

IEEE Photonics Technology Letters, 1998

View PDFchevron_right

Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C

Thoalfiqar Zaker

Canadian Journal of Physics, 2016

View PDFchevron_right

Spectral changes due to carrier induced band gap shrinkage for 675nm AlGaInP multiple quantum well (MQW) laser diodes at room temperatures

santosh chackrabarti

Optik - International Journal for Light and Electron Optics, 2016

View PDFchevron_right

Ultraviolet semiconductor laser diodes on bulk AlN

Oliver Schmidt

Journal of Applied Physics, 2007

View PDFchevron_right

670 nm AIGalnP/GalnP strained multi-quantum well laser diode with high characteristic temperature (To

won-jin choi

View PDFchevron_right

650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Imre.dr. Teng Jing Hua

Applied Physics Letters, 2003

View PDFchevron_right

Characterization of InGaN/AlGaN multiple-quantum-well laser diodes

Daniel Hofstetter

Physics and Simulation of Optoelectronic Devices VII, 1999

View PDFchevron_right

AlGaInP laser diodes incorporating a 3λ∕4 multiple quantum barrier

Mr Brown

Applied Physics Letters, 2005

View PDFchevron_right

Numerical study on lateral mode behavior of 660-nm InGaP/AlGaInP multiple-quantum-well laser diodes

Tien-chang Lu

Optical Review, 2009

View PDFchevron_right

Realization of band gap shrinkage to the spectral characteristics of high-luminous-efficiency 658 nm AlGaInP/GaInP multiple quantum well lasers at room temperatures

Thoalfiqar Zaker

Optical Materials, 2016

View PDFchevron_right

450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers

Satoshi Kamiyama

Japanese Journal of Applied Physics, 2019

View PDFchevron_right

Electron transport across bulk (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barriers determined from the IV characteristics of nin diodes measured between 60 and 310 K

Alan Morrison

View PDFchevron_right

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Daniel Hofstetter

View PDFchevron_right

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-$\mu{\hbox {m}}$ Double Quantum-Well GaInNAs–GaAs Lasers

Anders Larsson

IEEE Journal of Quantum Electronics, 2000

View PDFchevron_right

Hydrogen effect on 670-nm AlGaInP visible laser during high temperature

won-jin choi

View PDFchevron_right

Hydrogen effect on 670-nm AlGaInP visible laser during high temperature operation

won-jin choi

IEEE Journal of Selected Topics in Quantum Electronics, 1995

View PDFchevron_right

Effect of Cavity Length and Operating Parameters on the Optical Performance of Al0.08In0.08Ga0.84N/ Al0.1In0.01Ga0.89N MQW Laser Diodes

Alaa Ghazai

Semiconductor Laser Diode Technology and Applications, 2012

View PDFchevron_right

1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes

MengChyi Wu

IEEE Transactions on Electron Devices, 2002

View PDFchevron_right

Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001) GaAs

Paola Prete

Materials Science and Engineering B-advanced Functional Solid-state Materials, 1997

View PDFchevron_right

Room temperature performance of low threshold 1.34-1.44-/spl mu/m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy

Jose Ulloa

IEEE Photonics Technology Letters, 2000

View PDFchevron_right

Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates

Theeradetch Detchprohm

physica status solidi c, 2014

View PDFchevron_right

Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

Brent Krusor, M. Kneissl

IEEE Journal of Selected Topics in Quantum Electronics, 1998

View PDFchevron_right

CW Operation of AlGaInN–GaN Laser Diodes

Shigetaka Tomiya

physica status solidi (a), 1999

View PDFchevron_right

Simulation of double quantum well GaInNAs laser diodes

Slawomir Sujecki

IET Optoelectronics, 2007

View PDFchevron_right

MOVPE growth of AlGaAs/GaInP diode lasers

A. Knauer

Journal of Electronic …, 2000

View PDFchevron_right

High-power and low-threshold-current operation of 1.3 μm strain-compensated AlGaInAs/AlGaInAs multiple-quantum-well laser diodes

Wen-Jeng Ho

Solid-State Electronics, 2002

View PDFchevron_right

Optoelectronic properties of InP AlGaInP quantum dot laser diodes

محمد الغامدي

2009

View PDFchevron_right

Investigation of the performance characteristics of 500 nm to 510 nm green InGaN MQWs laser diodes

Ghasem Alahyarizadeh

View PDFchevron_right

Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes

Pekka Savolainen

Journal of Crystal Growth, 1999

View PDFchevron_right