original ) (raw )Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C
Thoalfiqar Zaker
Canadian Journal of Physics, 2016
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Spectral changes due to carrier induced band gap shrinkage for 675nm AlGaInP multiple quantum well (MQW) laser diodes at room temperatures
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Optik - International Journal for Light and Electron Optics, 2016
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Low-threshold laterally oxidized GaInP-AlGaInP quantum-well laser diodes
Ala'a Din
IEEE Photonics Technology Letters, 1998
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670 nm AIGalnP/GalnP strained multi-quantum well laser diode with high characteristic temperature (To
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Effects of Variation of Quantum Well Number on the Performance of a Designed 635nm Ga0.5In0.5P/(Al0.7Ga0.3)0.5In0.5P Multiple Quantum Well Red Laser
Md Rahim
2013
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650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine
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Applied Physics Letters, 2003
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“Spiked” GaInP Quantum Wells for Shorter Red Wavelength Emission
Mihail Dumitrescu
IEEE Photonics Technology Letters, 2000
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Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes
Pekka Savolainen
Journal of Crystal Growth, 1999
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Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes
Dan Yanson
Optical and Quantum Electronics, 2008
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Performance improvement of 650nm band AlGaInP laser diodes with optimal diffusion barriers
영준 신
Materials Science and Engineering: B, 2006
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Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasers
Murat ODUNCUOGLU
Semiconductor Science and Technology, 2003
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Mr Brown
Applied Physics Letters, 2005
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Largely variable electroluminescence efficiency with current and temperature in a blue (In, Ga)N multiple-quantum-well diode
Jinn-Kong Sheu
Applied Physics Letters, 2007
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Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-μm InGaAsP-InP multiple-quantum-well lasers
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IEEE Photonics Technology Letters, 2000
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The optical gain and radiative current density of GaInNAs/GaAs/AlGaAs separate confinement heterostructure quantum well lasers
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Journal of Applied Physics, 2010
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Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers
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IEEE Journal of Selected Topics in Quantum Electronics, 2001
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Effect of Cavity Length and Operating Parameters on the Optical Performance of Al0.08In0.08Ga0.84N/ Al0.1In0.01Ga0.89N MQW Laser Diodes
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Semiconductor Laser Diode Technology and Applications, 2012
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High-power and low-threshold-current operation of 1.3 μm strain-compensated AlGaInAs/AlGaInAs multiple-quantum-well laser diodes
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Solid-State Electronics, 2002
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Numerical study on lateral mode behavior of 660-nm InGaP/AlGaInP multiple-quantum-well laser diodes
Tien-chang Lu
Optical Review, 2009
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Influence of Magnetic Field on the Threshold Current, Temperature Characteristics, and on the Output Power in AlGaInP Multiple Quantum Well Laser
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Applied Physics Research, 2011
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Effect of Varying Quantum Well Thickness on the Performance of InGaN∕GaN Single Quantum Well Laser Diode
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AIP Conference Proceedings, 2008
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Effects of growth temperature on the structural and optical properties of 1.6 μm GaInNAs∕GaAs multiple quantum wells
Vincenzo Lordi
Applied Physics Letters, 2006
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Room temperature performance of low threshold 1.34-1.44-/spl mu/m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy
Jose Ulloa
IEEE Photonics Technology Letters, 2000
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The control and evaluation of blue shift in GaInAs/GaInAsP multiple quantum well structures for integrated lasers and Stark-effect modulators
Klaus Satzke
Semiconductor Science and Technology, 1993
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MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes
Daniel Hofstetter
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Calculated threshold currents of nitride- and phosphide-based quantum-well lasers
Paul Rees
IEEE Photonics Technology Letters, 1996
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Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance
Bernd Witzigmann
IEEE Journal of Quantum Electronics, 2003
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A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
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IEEE Journal of Selected Topics in Quantum Electronics, 2002
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Well-thickness dependence of high-temperature characteristics in 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasers
Haruhisa Soda
IEEE Photonics Technology Letters, 1998
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Room temperature operation of GaAsP (N)/GaP (N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen
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2011
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Design and Characterization of 1 . 3-m AlGaInAs – InP Multiple-Quantum-Well Lasers
Tso-Min Chou
2001
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Efficiencies in multiquantum well lasers
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Semiconductor Science and Technology, 2002
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