Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In${0.5}$Ga${0.5}$As and In${0.3}$Ga${0.7}$As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition (original) (raw)

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Dislocation multiplication in GaAs : inhibition by doping

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Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition

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Journal of Applied Physics, 2007

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In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs GaAs (001) system

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