High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results (original) (raw)

Resolution, Line-Edge Roughness, Sensitivity Tradeoff, and Quantum Yield of High Photo Acid Generator Resists for Extreme Ultraviolet Lithography

Charles Szmanda

Japanese Journal of Applied Physics, 2011

View PDFchevron_right

Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure

Michael Carcasi

Advances in Patterning Materials and Processes XXXIV

View PDFchevron_right

High-sensitivity nanocomposite resist materials for x-ray and EUV lithography

nikola batina

Advances in Resist Technology and Processing XX, 2003

View PDFchevron_right

Critical challenges for EUV resist materials

Nate Smith

2011

View PDFchevron_right

Ultra-sensitive EUV resists based on acid-catalyzed polymer backbone breaking

Panagiotis A. Argitis

2018

View PDFchevron_right

Chemically amplified molecular resists for e-beam lithography

Jon Preece

Microelectronic Engineering, 2008

View PDFchevron_right

Recent advances in resists for 157 nm microlithography

Yu-Tsai Hsieh

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002

View PDFchevron_right

Synthesis and evaluation of novel organoelement resists for EUV lithography

Christopher Ober

Proceedings of SPIE - The International Society for Optical Engineering, 2003

View PDFchevron_right

Evaluation of EUV resist performance using interference lithography

oktay yildirim

Extreme Ultraviolet (EUV) Lithography VI, 2015

View PDFchevron_right

Electronic structure, excitation properties, and chemical transformations of extreme ultra-violet resist materials

Amrit Narasimhan

Journal of Applied Physics, 2017

View PDFchevron_right

Design and Synthesis of Novel Resist Materials for EUVL

V S V Satyanarayana

View PDFchevron_right

Chemically-amplified EUV resists approaching 11 nm half-pitch

oktay yildirim

Extreme Ultraviolet (EUV) Lithography IX, 2018

View PDFchevron_right

Understanding the Role of Acid vs. Electron Blur in EUV Resist Materials

Mike Wagner

Journal of Photopolymer Science and Technology, 2010

View PDFchevron_right

Revolutionary and evolutionary resist design concepts for 193 nm lithography

Gary Dabbagh

Microelectronic Engineering, 1997

View PDFchevron_right

The Design of Resist Materials for 157nm Lithography

Grant Willson

Journal of Photopolymer Science and Technology, 2002

View PDFchevron_right

EUV resists comprised of main group organometallic oligomeric materials

Mark Neisser

Advances in Patterning Materials and Processes XXXI, 2014

View PDFchevron_right

Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography

Anja Voigt

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2017

View PDFchevron_right

Novel chemically amplified resists incorporating anionic photoacid generator functional groups for sub-50-nm half-pitch lithography

Clifford Henderson

Journal of Materials Chemistry, 2009

View PDFchevron_right

Photospeed considerations for extreme ultraviolet lithography resists

Paul Dentinger

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002

View PDFchevron_right