GSM and DCS SiGe BiCMOS mixer ICs with wide LO power range (original) (raw)
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A 65-NM CMOS RF Mixer for Different Applications
2015
A down conversion RF mixer is designed with 65nm CMOS technology for a different low power consumption applications. Mixer structure comprises a double-balanced Gilbert-Cell with improving linearity method in the RF stage of circuit; all is at a supply voltage of 1.8V and a power of 2.17 mW. The circuit is simulated for different spectrum applications as: 200 MHz mobile users, 1.9 GHz wireless applications, and 20 to 60 GHz commercial satellite and pointtopoint communications. The reported design achieves good values in terms of a radio frequency mixer evaluating parameters such as: Consumed Power, Conversion Gain, Noise Figure and Linearity.
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A Single-Stage Low-Power Double-Balanced Mixer Merged with LNA and VCO
International Journal of Electrical and Computer Engineering (IJECE), 2017
This paper proposes three types of single stage low-power RF front-end, called double-balanced LMVs, by merging LNA, mixer, and voltage-controlled oscillator (VCO) exploiting a series LC (SLC) network. The low intermediate frequency (IF) or baseband signal can be directly sensed at the drain nodes of the VCO switching transistors by adding a simple resistor-capacitor (RC) low-pass filter (LPF). By adopting a double-balanced mixer topology, the strong leakage of the local oscillator (LO) at the IF output is effectively suppressed. Using a 65 nm CMOS technology, the proposed double-balanced LMVs (DB-LMVs) are designed. Oscillating at around 2.4 GHz ISM band, the phase noise of the proposed three DB-LMVs is −111 dBc/Hz at 1 MHz offset frequency. The simulated voltage conversion gain is larger than 36 dB and the double-side band (DSB) noise figure (NF) is less than 7.7 dB. The DB-LMVs consume only 0.2 mW dc power from 1-V supply voltage.
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A novel common-gate mixer for wireless applications
IEEE Transactions on Microwave Theory and Techniques, 2002
In this paper, a balanced 27 GHz common-gate downconvert mixer is presented. The common-gate configuration allows 0.8 μm MESFETs to be used at frequencies in excess of those practical for the common-source configuration. Measurements indicate a conversion loss of 10.7 dB at an input RF frequency of 27 GHz and local-oscillator power of 7.4 dBm, with a third-order intercept at
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