Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD (original) (raw)
Reduced-Pressure Chemical Vapor Deposition of Epitaxial Ge Films on Si(001) Substrates Using GeCl[sub 4]
Anthony Lochtefeld
Electrochemical and Solid-State Letters, 2007
View PDFchevron_right
Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition
Davide Cammilleri
Journal of Crystal Growth, 2007
View PDFchevron_right
One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor
Jignesh Vanjaria
Electronic Materials
View PDFchevron_right
Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular beam epitaxy from Si2H6
Raphael Tsu
Journal of Applied Physics, 1994
View PDFchevron_right
One-Step Ge/Si Epitaxial Growth
Hsin-tien Chiu
ACS Applied Materials & Interfaces, 2011
View PDFchevron_right
Kinetics of Si incorporation into a Ge matrix for Si[sub 1−x]Ge[sub x] layers grown by chemical vapor deposition
Matthias Bauer
Journal of Applied Physics, 2006
View PDFchevron_right
Surface Morphology during Multilayer Epitaxial Growth of Ge(001)
Dr. Mohammed M Hasan
Physical Review Letters, 1995
View PDFchevron_right
Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(001)2Xl by cyclic gas-source molecular beam epitaxy from S&H6
Raphael Tsu
View PDFchevron_right
Epitaxial Ge Growth on Si(111) Covered with Ultrathin SiO<sub>2</sub> Films
Konstantin Romanyuk
Journal of Surface Engineered Materials and Advanced Technology, 2013
View PDFchevron_right
Epitaxial growth of Ge and SiGe on Si substrates
A. Larsen
Materials Science in Semiconductor Processing, 2006
View PDFchevron_right
Epitaxial growth of germanium on silicon using a Gd[sub 2]O[sub 3]/Si (111) crystalline template
O. Mauguin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2010
View PDFchevron_right
Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V / c-Si tandem solar cells
Monalisa Ghosh
Solar Energy Materials and Solar Cells, 2022
View PDFchevron_right
High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition
Gun-do Lee
Thin Solid Films, 2009
View PDFchevron_right
High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge
Abdallah Moussa
Thin Solid Films, 2008
View PDFchevron_right
Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C
Vladimir A Yuryev
Nanoscale research letters, 2015
View PDFchevron_right
High quality Ge epitaxial layers in narrow channels on Si (001) substrates
Roger Loo
Applied Physics Letters, 2010
View PDFchevron_right
Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating
Masao Sakuraba
Thin Solid Films, 2014
View PDFchevron_right
Characterization of Ge Films on Si(001) Substrates Grown by Nanocontact Epitaxy
Masakazu Ichikawa
Japanese Journal of Applied Physics, 2013
View PDFchevron_right
Growth and characterization of Ge nanostructures selectively grown on patterned Si
A. Sgarlata
Thin Solid Films, 2008
View PDFchevron_right
Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition
Oluwamuyiwa Olubuyide
Thin Solid Films, 2006
View PDFchevron_right
Growth of Ge–Si(111) epitaxial layers: intermixing, strain relaxation and island formation
Juan F . Castro-Cal
Surface Science, 1998
View PDFchevron_right
Si epitaxial growth on SiH3CH3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatment
Masao Sakuraba
Applied Surface Science, 2003
View PDFchevron_right
X-ray studies of Si/Ge/Si(001) epitaxial growth with Te as a surfactant
Michael Bedzyk
Physical Review B, 2003
View PDFchevron_right
VLPCVD Heteroepitaxial Growth of Very Thin GE-Layers on Si-Substrates
Jan Vanhellemont, J. Poortmans
MRS Proceedings, 1992
View PDFchevron_right
Epitaxial Crystallization of Ge on Si Using Evaporation and Recrystallization Techniques
George Celler
MRS Proceedings, 1986
View PDFchevron_right
STM studies of GeSi thin layers epitaxially grown on Si(111)
A. Sgarlata
Applied Surface Science, 1996
View PDFchevron_right
Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy
Michael J Aziz
Applied Physics Letters, 2005
View PDFchevron_right
Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut
Eugene Fitzgerald
Journal of Electronic Materials, 2013
View PDFchevron_right
Growth of Si[sub 1−x]Gesub x on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions
Patrick Desjardins
Journal of Applied Physics, 1999
View PDFchevron_right
Facile Chemical Solution Deposition of High-Mobility Epitaxial Germanium Films on Silicon
Baoquan Sun
Angewandte Chemie International Edition, 2010
View PDFchevron_right
Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering
SHINJI MIGITA
Materials Science in Semiconductor Processing, 2017
View PDFchevron_right
Substrate orientation dependence on the solid phase epitaxial growth rate of Ge
Jose Gomez-Selles
Journal of Applied Physics, 2013
View PDFchevron_right
Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(001) windows
M. Halbwax
Materials Science in Semiconductor Processing, 2006
View PDFchevron_right
Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature
Eric Ganz
Applied Physics Letters, 1991
View PDFchevron_right
Formation of the wetting layer in Ge/Si (111) studied by STM and XAFS
Giovanni Capellini, A. Sgarlata
2000
View PDFchevron_right