Investigation of the Causes of Silicon Mos — Transistor Parameters Catastrophic Degradation (original) (raw)
Related papers
Degradation of Short-Channel Mos Transistors Stressed at Low Temperature
Le Journal de Physique Colloques, 1988
Degradation of hard MOS devices at low temperature
Journal de Physique IV (Proceedings), 2002
Current Opinion in Solid State and Materials Science, 2004
A New Approach of Hot-Carrier Degradation and Lifetime Prediction for N-MOS Transistors
2006
Fault modeling of physical failures in CMOS VLSI circuits
IEEE Transactions on Circuits and Systems
Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs
e-Journal of Surface Science and Nanotechnology
Charge Pumping, Geometric Component and Degradation Parameters Extraction in MOSFET Devices
IEEE Transactions on Device and Materials Reliability, 2015
Latent damage and parametric drift in electrostatically damaged MOS transistors
Journal of Electrostatics, 1993
New characterization and modeling approach for NBTI degradation from transistor to product level
2007 IEEE International Electron Devices Meeting, 2007
Oxygen-induced broken-bond defect in silicon
Physical Review B, 1992
Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFET
IEEE Transactions on Electron Devices, 2010
Influence of the state of polysilicon/silicon dioxide interface on MOS properties
1982 International Electron Devices Meeting, 1982
Moore's law lives on [CMOS transistors]
IEEE Circuits and Devices Magazine, 2003
Behavior of Wafer SMD (Surface Micro Defect) as a Origin of Oxide Breakdown
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, 1991
Solar Energy Materials and Solar Cells, 2018
Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation
Lecture Notes in Computer Science
Low temperature MOS device modeling
Proceedings of the Workshop on Low Temperature Semiconductor Electronics
Electrical breakdown at semiconductor grain boundaries
Physical Review B, 1986
Bias and oxide thickness dependence of trapped charge buildup in MOS devices
Unknown, 1989
Sulfur point defects in crystalline and amorphous silicon
Physical Review B, 2004
Oxide-trap charge-pumping for radiation reliability issue in MOS devices
2009 4th International Conference on Design & Technology of Integrated Systems in Nanoscal Era, 2009
Fatigue failure in polysilicon not due to simple stress corrosion cracking
2002
Radiation Effects on MOS Devices: Dosimetry, Annealing, Irradiation Sequence, and Sources
IEEE Transactions on Nuclear Science, 1983
Improved physical models for advanced silicon device processing
Materials Science in Semiconductor Processing, 2017
IEEE Electron Device Letters, 1992
On the low-temperature static and dynamic properties of high-performance silicon bipolar transistors
IEEE Transactions on Electron Devices, 1989
Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs
IEEE Electron Device Letters, 2011
Effect of Copper on the Carrier Lifetime in Black Silicon
Journal of Infrared, Millimeter, and Terahertz Waves, 2011
The interstitial C i O i defect in bulk Si and Si 1 x Ge x
Journal of Physics: Condensed Matter, 2004
Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers
Journal of Applied Physics, 2009
Study of X-ray radiation damage in silicon sensors
Journal of Instrumentation, 2011
Optimizing and Controlling the Radiation Hardness of a Si-Gate CMOS Process
IEEE Transactions on Nuclear Science, 1985
Lifetime Degradation on n-type Wafers with Boron-diffused and SiO2/SiN-passivated Surface
Energy Procedia, 2014
Series resistance effects in submicron MOS transistors operated from 300 K down to 4.2 K
Le Journal de Physique IV, 1994
Solar Energy Materials and Solar Cells, 2018