Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures (original) (raw)

(2007) Physica Status Solidi (C) Current Topics in Solid State Physics, 4 (5), pp. 1743-1746.

Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

P. Yakovlev

Semiconductors, 2009

Growth of truncated pyramidal InSb nanostructures on GaAs substrate

Journal of Crystal Growth, 2017

Investigation of Morphology of InSb/InAs Quantum Nano‐Stripe Grown by Molecular Beam Epitaxy

physica status solidi (b), 2019

Molecular-beam epitaxy of InSb/GaSb quantum dots

(2007) Journal of Applied Physics, 101 (12), art. no. 124309, .

Morphology evolution of InSb island grown on InP substrates by atomic layer molecular beam epitaxy

Francesca Peiró

Microelectronic Engineering, 1998

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy

Somsak Panyakeow

physica status solidi (b), 2019

Morphology of self-assembled InSb/GaAs quantum dots on Ge substrate

Somsak Panyakeow

Journal of Crystal Growth, 2017

Self-assembled quantum dots of InSb grown on InP by atomic layer molecular beam epitaxy: Morphology and strain relaxation

Joan Morante

Applied Physics Letters, 1996

Early stages of low temperature epitaxial growth of InSb on GaAs

Ryszard Czajka

Crystal Research and Technology, 2005

Raman scattering of InSb quantum dots grown on InP substrates

JC Ferrer

Journal of Applied Physics, 1997

GaSb and InSb Quantum Nanostructures: Morphologies and Optical Properties

MRS Advances, 2015

Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

physica status solidi (a), 2018

Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (1 0 0) InAlAs/InP substrates

Stephen Myers

Applied Surface Science, 2002

Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy

Richard Arès

High-density InSb-based quantum dots emitting in the mid-infrared

(2007) Journal of Crystal Growth, 301-302 (SPEC. ISS.), pp. 713-717.

Nanoscale characterization of InSb/InAs novel functional semiconductor nanostructures for LEDs / Caracterización a nanoescala de nanoestructuras funcionales novedosas de InSb/InAs para LEDs

Atif khan

2020

Self-Assembled InAs(N) Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (100)*

Julio Mendoza Alvarez

State-of-the-Art of Quantum Dot System Fabrications, 2012

InSb/InAs Quantum Nano-Stripes Grown by Molecular Beam Epitaxy and Its Photoluminescence at Mid-Infrared Wavelength

Journal of Crystal Growth, 2019

InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates

Nikolay Bert

Semiconductors, 2017

Structural and optical properties of InSb quantum dots for mid-IR applications

Biswarup Satpati, Achim Trampert

(2006) Physica Status Solidi (B) Basic Research, 243 (15), pp. 3959-3962.

Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field

Journal of Crystal Growth, 2019

Self Size-Limiting Process of InAs Quantum Dots Grown by Molecular Beam Epitaxy

Toshiyuki KAIZU

Japanese Journal of Applied Physics, 2001

Molecular beam epitaxial growth of GaSb quantum Dots on (001) GaAs substrate with InGaAs insertion layer

Somsak Panyakeow

Journal of Crystal Growth, 2015

Facet Formation of Uniform InAs Quantum Dots by Molecular Beam Epitaxy

Toshiyuki KAIZU

Japanese Journal of Applied Physics, 2003

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

Itaru Kamiya

Journal of Applied Physics, 2015

Growth mechanism of InAs–InSb heterostructured nanowires grown by chemical beam epitaxy

F. Beltram

Journal of Crystal Growth, 2011

Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy

sa sa

Journal of Crystal Growth, 1990

Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

Larbi Sfaxi

International Journal of Spectroscopy, 2011

Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy

JinSoo Kim

Journal of Crystal Growth, 2004

Growth of InAs quantum dots on GaAsSb for the realization of a quantum dot solar cell

Ganming Liu

Photovoltaic Specialists, IEEE Conference, 2008

Anti-Phase Domain Induced Morphological Differences of Self-Assembled InSb/GaAs Quantum Dots Grown on (001) Ge Substrate

Journal of Crystal Growth, 2019

High-density, uniform InSb/GaSb quantum dots emitting in the midinfrared region

(2006) Applied Physics Letters, 89 (26), art. no. 263118, .

Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure

silke christiansen

Applied Physics Letters, 2011

Surface morphology and lateral distribution of self-assembled in0. 5Ga0. 5AS nanostructures grown on gaAs (100) substrate

Khamim Ismail

2008