Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices (original) (raw)

Comparison of InGaN/GaN light emitting diodes grown onm -plane anda -plane bulk GaN substrates

Steven Denbaars

physica status solidi (RRL) – Rapid Research Letters, 2008

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Growth of high-quality InGaN/GaN LED structures on (1 1 1) Si substrates with internal quantum efficiency exceeding 50%

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Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate

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IEEE Journal of Quantum Electronics, 2000

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On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes

Zhengang Ju

Optics Express, 2014

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InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates

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Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

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Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique

Wu-yih Uen

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First InGaN/GaN thin film LED using SiCOI engineered substrate

Mauro Mosca

physica status solidi (c), 2006

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Improved crystalline quality and light output power of GaN-based light-emitting diodes grown on Si substrate by buffer optimization

Kei Lau

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Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO

O. Mauguin

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High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

Tien-chang Lu

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The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes

Hao-chung Kuo

Nanoscale Research Letters, 2014

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Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

Abdul Karim

Applied Physics Letters, 2000

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Droop reduction in ZnO/GaN Hybrid Light Emitting Diodes

bhubesh joshi

Indian Journal of Pure & Applied Physics

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Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes

Steven Denbaars

Journal of Crystal Growth, 2010

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ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique

Ricky Chuang

Applied Physics Letters, 2007

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Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Đức Vũ đình

Journal of Applied Physics, 2016

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The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer

Jinn-Kong Sheu

IEEE Electron Device Letters, 2011

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Light Output Enhancement of GaN-Based Light-Emitting Diodes Using ZnO Nanorod Arrays Produced by Aqueous Solution Growth Technique

Prof. HC Kuo

IEEE Photonics Technology Letters, 2000

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High Power and High External Efficiency m -Plane InGaN Light Emitting Diodes

Steven Denbaars

Japanese Journal of Applied Physics, 2007

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Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

Tsung-Shine Ko

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Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO_2

Chu-Young Cho

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InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies

Christophe Durand

physica status solidi (c), 2012

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Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air Gaps

Jinn-Kong Sheu

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Future prospects of InGaN/GaN Multiple Quantum Well Solar Cells Research for High Quantum Efficiency and Cost effectiveness

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Optical properties of (11¯01) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates

Prof. HC Kuo

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Integrated high reflectivity silicon substrates for GaN LEDs

Michael Lebby

physica status solidi (c), 2012

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Structural and optical properties of InGaN/GaN layers close to the critical layer thickness

M. Den Hertog

Applied Physics Letters, 2002

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Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

Kei Lau

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ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology

Andreas Waag

Proceedings of the IEEE, 2000

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Improved electroluminescence on nonpolarm -plane InGaN/GaN quantum wells LEDs

Steven Denbaars

physica status solidi (RRL) – Rapid Research Letters, 2007

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Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si

S. Metzner

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Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

T. Moudakir

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High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates

Yutaka Terao

Applied Physics Letters, 2013

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Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

Y. Yin

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