The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes (original) (raw)
Related papers
Long-wavelength photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures
Technical Physics Letters, 2007
Acta Physica Polonica A, 2015
GaSb/AlGaSb COMPOUND SEMICONDUCTORS GROWN BY MOCVD FOR OPTOELECTRONIC APPLICATIONS
Journal of Nonlinear Optical Physics & Materials, 2006
Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
1998
G. Konovalov, Vladislav Dudelev, Grigorii Sokolovskii
Semiconductors, 2013
Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter
Acta Physica Polonica A, 2014
Ion beam analysis of GaInAsSb films grown by MOVPE on GaSb
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005
MOVPE of GaSb/InGaAsSb multilayers and fabrication of dual band photodetectors
Infrared and Photoelectronic Imagers and Detector Devices, 2005
Study of optical and electrical properties of GaSb/Al/sub x/Ga/sub 1-x/Sb grown by MOCVD
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046), 2000
InGaSb/GaSb photodiodes grown by MOVPE
Journal of Crystal Growth, 1992
Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
Journal of Crystal Growth, 1998
GaSb/InAsSb heterostructure MWIR detector for high temperature operation
Infrared Technology and Applications XXXIV, 2008
Vladislav Dudelev, Grigorii Sokolovskii
Semiconductor Science and Technology, 2008
Fabrication and passivation of GaSb photodiodes
Journal of Crystal Growth, 2008
Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures
Applied Physics Letters, 2002
LPE growth and characterisation of GaInAsSb and GaAlAsSb quaternary layers on (100) GaSb substrates
Thin Solid Films, 2004
2004
Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 �m
J Electron Mater, 2006
Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm
Journal of Electronic Materials, 2006
Effect of GaSb growth temperature on p-GaSb/n-GaAs diodes grown by MOVPE
IEE Proceedings - Optoelectronics, 1998
Opto-Electronics Review, 2011
GaAs/GaSb strained-layer heterostructures deposited by metalorganic vapor phase epitaxy
Applied Physics Letters, 1989
Optical properties of GaSbAlSb heterostructures grown by molecular beam epitaxy
Materials Science and Engineering: B, 1993
Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector
Semiconductor Science and Technology, 2004
Applied Physics Letters, 2022
High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy
Solid State Phenomena, 2010
Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range
Applied Physics Letters, 1997
Journal of Applied Physics, 2009
Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy
Semiconductor Science and Technology, 1991
Growth of high-quality GaSb by metalorganic vapor phase epitaxy
Journal of Electronic Materials, 1995
Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures
AIP Advances
Hole Mobility And Scattering Mechanism on Undoped MOCVD Grown of GaSb
2001