High-performance laser diodes with emission wavelengths above 1100 nm and very small vertical divergence of the far field (original) (raw)

Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields

Frank Bugge

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Arnab Bhattacharya

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Daniel Hofstetter

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MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

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Iulian Petrescu-Prahova

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High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers CONFERENCE PAPER in PROCEEDINGS OF SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING · MAY 1997

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Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

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High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm

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High-Power Low Vertical Beam Divergence 800-nm-Band Double-Barrier-SCH GaAsP–(AlGa)As Laser Diodes

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