original ) (raw )Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C
Jin Young Jang
Applied Physics Letters, 2014
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Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress
Eugene Chong
Applied Physics Letters, 2011
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The effect of annealing on amorphous indium gallium zinc oxide thin film transistors
James Pak
Thin Solid Films, 2010
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Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors
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Journal of applied Physics, 2011
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Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer
van nguyen
Semiconductor Science and Technology, 2011
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Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability
Dae Hwan Kim
IEEE Transactions on Electron Devices, 2012
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AC Bias-Temperature Stability of a-InGaZnO Thin-Film Transistors With Metal Source/Drain Recessed Electrodes
Hideya Kumomi , Eric Yu , Jerzy Kanicki
IEEE Transactions on Electron Devices, 2000
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Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors
Ken Hoshino
IEEE Transactions on Electron Devices, 2009
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Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors, APPLIED PHYSICS LETTERS Vol. 98, p-153511 (2011)
MD DELWAR HOSSAIN CHOWDHURY
Applied Physics Letters, 2011
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Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric
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Applied Physics Letters, 2010
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Single-source dual-layer amorphous IGZO thin-film transistors for display and circuit applications
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Journal of the Society for Information Display, 2013
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Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors
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Electronics
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Kinetic Stress Testing and the Influence of Long-Time Anneals on the Behavior of IZO Thin Film Transistors
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IEEE Transactions on Electron Devices, 2013
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Suppression of Degradation Induced by Negative Gate Bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias
phi hung
ACS Applied Materials & Interfaces, 2014
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Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation
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Applied Physics Letters, 2014
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High-Performance Drain-Offset a-IGZO Thin-Film Transistors
Mallory Mativenga
IEEE Electron Device Letters, 2011
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Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors
Jin Young Jang
Applied Physics Letters, 2011
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Effect of SiO2 and SiO2 /SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity
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IEEE Transactions on Electron Devices, 2015
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Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors
Won-ju Cho
Journal of the Korean Physical Society, 2012
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Numerical simulation of bias and photo stress on indium-gallium-zinc-oxide thin film transistors
Nouredine Sengouga
Vacuum, 2015
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X-ray reflectivity and surface energy analyses of the physical and electrical properties of α-IGZO/GZO double active layer thin film transistors
Sheng-Yuan Chu
Ceramics International, 2014
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Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress
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Applied Physics Letters, 2009
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Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer
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Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors
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Impact of Ti doping in Sm2O3 dielectric on electrical characteristics of a-InGaZnO thin-film transistors
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Applied Physics Letters, 2013
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Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors
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Solid-State Electronics, 2011
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IEEE Transactions on Electron Devices, 2018
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Study of mechanism of stress-induced threshold voltage shift and recovery in top-gate amorphous-InGaZnO4 thin-film transistors with source- and drain-offsets
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Solid State Communications, 2012
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Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics
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Applied Physics Letters, 2008
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Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N 2 O Annealing
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