Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures (original) (raw)
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Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating
Scientific reports, 2016
Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.
The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review
Journal of Microelectromechanical Systems, 2015
Silicon carbide (SiC) is one of the most promising materials for applications in harsh environments thanks to its excellent electrical, mechanical, and chemical properties. The piezoresistive effect of SiC has recently attracted a great deal of interest for sensing devices in hostile conditions. This paper reviews the piezoresistive effect of SiC for mechanical sensors used at elevated temperatures. We present experimental results of the gauge factors obtained for various poly-types of SiC films and SiC nanowires, the related theoretical analysis, and an overview on the development of SiC piezoresistive transducers. The review also discusses the current issues and the potential applications of the piezoresistive effect in SiC. [2015-0092] Index Terms-Silicon carbide, piezoresistive effect, piezoresistance, harsh environments, microelectromechanical systems (MEMS).
Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC
Applied Physics Letters, 2014
The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, À5.2, and 30.3, respectively. The fundamental piezoresistive coefficients p 11 , p 12 , and p 44 of p-type 3C-SiC were obtained to be 1.5 Â 10 À11 Pa À1 , À1.4 Â 10 À11 Pa À1 , and 18.1 Â 10 À11 Pa À1 , respectively. From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors. V
Characterization of highly doped n- and p-type 6H-SiC piezoresistors
IEEE Transactions on Electron Devices, 1998
Highly doped (2 2 10 19 cm 03) n-and p-type 6H-SiC strain sensing mesa resistors configured in Wheatstone bridge integrated beam transducers were investigated to characterize the piezoresistive and electrical properties. Longitudinal and transverse gauge factors, temperature dependence of resistance, gauge factor (GF), and bridge output voltage were evaluated. For the n-type net doping level of 2 2 10 19 cm 03 , the bridge gauge factor was found to be 15 at room temperature and 8 at 250 C. For this doping level, a TCR of 00.24%= C and 00.74%= C at 100 C was obtained for the n-and ptype, respectively. At 250 C, the TCR was 00.14%= C and 00.34%= C, respectively. In both types, for the given doping level, impurity scattering is implied to be the dominant scattering mechanism. The results from this investigation further strengthen the viability of 6H-SiC as a piezoresistive pressure sensor for high-temperature applications.
This paper presents the development of a single crystalline 3C-SiC piezoresistive pressure sensor using wafer bonding and bulk micromachining techniques. The wafer used to fabricate this pressure sensor consisted of a 3C-SiC/SiO 2 /Si structure that was obtained by wafer bonding and etchback. The pressure sensors were tested at temperatures up to 385 o C and exhibited a sensitivity of 101.5 µV/V*psi at room temperature and 53.4 µV/V*psi at 385 o C. The estimated gauge factor of the 3C-SiC piezoresistors is about –18.
Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films
Journal of Materials Chemistry C, 2014
This paper reports, for the first time, the piezoresistive effect of p-type single crystalline 3C-SiC nanothin films grown by LPCVD at low temperature. Compared to thick SiC films, the gauge factors of the 80 nm and 130 nm films decreased remarkably. This result indicates that the crystal defect at the SiC/Si interface has a significant influence on the piezoresistive effect of ultra-thin film p-type 3C-SiC.
Piezoresistive Effect in 4H Silicon Carbide towards Mechanical Sensing in Harsh Environments
2018
The fast-growing demand for mechanical sensors in harsh environments (e.g. mining/deep oil explorations, power/chemical plants and space explorations) urges the development of advanced materials which can replace silicon to work in these conditions. The superior mechanical properties of 4H silicon carbide (4H-SiC) combined with the physical stability at high temperatures offer new capabilities to develop MEMS sensors for those challenging situations. The piezoresistive effect is positioned as one of the most significant sensing mechanisms used in MEMS/NEMS sensors to detect or monitor mechanical signals, such as pressure, inertia, acceleration and deflection. Additionally, the use of micromachined sensors enables the miniaturization and integration capabilities while requiring low power consumption and simple readout circuitries. The main goals of this thesis are to investigate the piezoresistive effect in p-type 4H-SiC and to develop 4H-SiC based sensors which can be utilised for m...
Applied Physics Letters, 2016
Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P12=(5.3±0.4)×10-11 Pa-1,P11=(−2.6±0.6)×10-11 Pa-1, and P44=(11.42±0.6)×10-11 Pa-1. Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.