BJT Research Papers - Academia.edu (original) (raw)

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- by
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- BJT
- by Ernie Kim
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- Modeling, Field effect transistors, TTL, BJT

Frequency oscillator is one of the basic devices that can be used in most electrical, electronics and communications circuits and systems. There are many types of oscillators depending on frequency range used in an application such as audio, radio and microwave. The needed was appeared to use high and very high frequencies to make the rapid development of advanced technology Colpitts oscillator is one of the most common types of oscillator, it can be used for radio frequency (RF), that its output signal is often utilized at the basic of a wireless communication system in most application. In this research, a Colpitts oscillator is comprised from a bipolar junction transistor (BJT) amplifier with LC tank. This design is carrying out with a known Barkhausen criterion for oscillation. Firstly, is carried out using theoretical calculation. The secondary is carried out using simulation (Multisim 13). All the obtained result from the above two approaches are 10 MHz and 9.745 MHz respectively. This result is seen to be very encouraging.

Introduction
This lab session has a purpose of practical implementation of theoretical knowledge about transistors. There are four parts in the work:
• NPN and PNP Transistors
• Transistors Biasing
• Q point stabilization
Apparatus
The following equipment was used during the lab:
• MCM3/EV board
• Power supply PSLC or PS1-PSU/EV
• Accessories
As in the previous lab, the whole lab work is done with the MCM/EV board. The oscilloscope was used for the visualization of the waveforms. Screwdriver was used for the variable resistor configuration.

- by Dhessa Cabral
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- BJT

Este libro brinda una introducción a la electrónica en semiconductores -también llamada de estado
sólido- para carreras de ingeniería en electrónica, electricidad, computadoras, comunicaciones, control y sistemas. Provee una explicación de los mecanismos de conducción eléctrica en Silicio,
que luego se utiliza para el desarrollo de cuatro dispositivos fundamentales de la electrónica actual: el diodo de juntura, el capacitor Metal-Oxido-Semiconductor (MOS), el transistor MOS, y el transistor bipolar de juntura. El libro conduce al estudiante a que entienda el funcionamiento de cada dispositivo, partiendo de sus principios fundamentales, y que a partir de allí, comprenda en profundidad los diferentes modelos eléctricos que puede utilizar para representarlo, sus alcances y limitaciones. El objetivo último es que el estudiante conozca y sepa utilizar los distintos modelos de los dispositivos electrónicos, de acuerdo al rango de amplitud y frecuencia, para su utilización futura en el diseño y análisis de circuitos.

- by Pedro Julian
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- Argentina, VLSI, Electronica, Ingeniería
- by Mohamed Albanna
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- Computer Science, Design, RF, BJT
- by Puji Kumala Pertiwi
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- BJT, Rangkaian Listrik

(BJT) adalah jenis transistor yang memiliki tiga kaki, yaitu (Basis,Kolektor, dan Emitor) dan di pisah menjadi dua arah aliran, positif dan negatif. Aliran positifdan negatif diantara Basis dan Emitor terdapat tegangan dari 0v sampai 6v tergantung pada besar tegangan sumber yang dipakai. Dan besar tegangan tersebut merupakan parameter utama transistor tipe BJT

- by .Anatoli #7999
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- BJT, Transistor
- by Puji Kumala Pertiwi
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- BJT, Rangkaian Listrik
- by Poornima Sharma
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- BJT

The experiment about BJT DC Analysis had been done. This experiment has three goals. The goals was to analyze PNP and NPN transistor as a switch, to find Vmin and Imin on Basis to light up the LED (pnp and npn), and to find the Hfe values which is and. The methods used in this experiment are by set up the devices, then the devices arranged as seen on Picture 2.1. After that, the voltage source turned on and the voltage measured using AVO meter. Next, potentio resistance which is used determined. Basis current, emittor current, and voltage between basis and ground measured. The lamp observed. Those steps repeated with variations of potentio resistance. The results from this experiments are transistor can be functioned as a switch by control the sum of current in basis, collector, and emitter terminal; The values of Imin on PNP and NPN transistor needed to light up the LED lamp are 0,154 on PNP and 0,009 on NPN, and the average Hfe values which are and on PNP circuit are XXX and on NPN circuit are 19,4433 and-0,12593; and on NPN circuit are 0,971068 and 316,1754.

- by Rizqi Ahmad Fauzan
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- Electronics, BJT, Transistores
- by Subodh Minj
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- Stress, Semiconductor Devices, PWM, Resonance
- by Pedro Julian
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- Electronica, Semiconductores, Transistor Mos, BJT

Amplifier_Design_using_BJTs Pre lab
Basing and operating point ,Analysis of Bias ckt and DC Load line, Voltage divider Biasing ckt

A silicon-on-insulator double gate-controlled dual base bipolar junction transistor (BJT) is proposed here. The device structure is same as SOI MOSFET with two body contacts. Here a novel mode of operation of this existing structure has been investigated. The device combines two lateral BJTs and features two MOS gates to control the BJT action of the device. The neutral base region in which the BJT action takes place and carrier concentration rofile in the base region can be modulated by the two MOS gate biases which in turn modulate the current gain of the device. This novel transistor’s multiple bases and extra functional flexibility may give rise to exciting circuit opportunities for analog, RF, mixed signal and digital applications.

- by Shehrin Sayed
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- Silicon on Insulator, BJT, Multi Gate Transistors
- by B. Meinerzhagen
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- Computational Modeling, Monte Carlo, Monte Carlo Methods, Boundary Conditions

- by khalid humood
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- Physics, RF, BJT, LC

- by Omar A. Imran
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- RF, BJT, LC, Colpitts oscillators
- by Fred Lee
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- Stress, Semiconductor Devices, PWM, Resonance
- by Ramazan Kopru
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- Optimization, UMTS, Design method, GSM

A silicon-on-insulator double gate-controlled dual base bipolar junction transistor (BJT) is proposed here. The device structure is same as SOI MOSFET with two body contacts. Here a novel mode of operation of this existing structure has been investigated. The device combines two lateral BJTs and features two MOS gates to control the BJT action of the device. The neutral base region in which the BJT action takes place and carrier concentration profile in the base region can be modulated by the two MOS gate biases which in turn modulate the current gain of the device. This novel transistor’s multiple bases and extra functional flexibility may give rise to exciting circuit opportunities for analog, RF, mixed signal and digital applications.

- by Shehrin Sayed
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- Silicon on Insulator, BJT, Multi Gate Transistors, Electron Devices

- by Omar Imran
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- RF, BJT, LC, Colpitts oscillators
- by Mykhaylo Teplechuk
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- Filter, BJT, Low Power Electronics, Network Topology

Gelatinization phenomena of amaranth starch were investigated using differential scanning calorimetry. Slight variations in onset (To) and peak (Tpl) temperatures were observed at moisture contents over 0.48 g water/g total. However, completion temperature (Tc) increased significantly. The intermediate transition temperature (Tp2) appeared at 0.61 g water/g total and below. The degree of gelatinization decreased by decreasing the moisture content. The three transition temperatures (To. Tpl and Tc) were increased and gelatinization delayed as the concentration of sucrose was enhanced. The three latter transition temperatures tended to increase as the sodium chloride was raised to 0.066 g/g total, but further increases in salt reduced significantly these temperatures. The gelatinization was delayed by increasing the salt concentration. After annealing for 12 h at 25 to 65°C, starch samples exhibited higher To and Tpl values, and narrowed gelatinization ranges. The degree of gelatinization augmented up to the annealing temperature of 55ºC and significantly decreased thereafter.Anwendung der Differential-Raster-Calorimetrie auf die Verkleisterung von Amaranthstärke – Einfluß von Wasser, Gelöstem und Verfestigung.Unter Anwendung der Differential-Raster-Calorimetrie wurden die Verkleisterungserscheinungen von Amaranthstärke untersucht. Bei Feuchtigkeitsgehalten von 0,48 g/Gesamtgewicht und darüber wurden leichte Veränderungen der Anfangs-(To)- und der Peak-(Tpl)-Temperaturen beobachtet. Dagegen stieg die Endtemperatur (Tc) beträchtlich an. Die intermediäre Übergangs-temperatur (Tp2) trat auf bei 0.61 g Wasser/g Gesamtgewicht und darunter. Der Verkleisterugsgrad verringerte sich mit abnehmendem Feuchtigkeitsgehalt. Die drei Übergangstemperaturen (To, Tpl und Tc) wurden erhöht, und die Verkleisterung wurde verzögert. wenn die Saccharosekonzentration erhöht wurde. Die drei letzteren Übergangstemperaturen tendieren zur Erhöhung. wenn Natriumchlorid auf 0.066 g/g Gesamtgewicht erhöht wurde, jedoch reduzierten weitere Salzmengen diese Temperaturen erheblich. Die Verkleisterung wurde durch Erhöhung der Salzkonzentration verzögert. Nach 12 stündiger Verfestigung bei 25 bis 65ºC zeigten die Stärkeproben höhere To-und Tpl-Werte, und die Verkleisterungsbereiche wurden enger. Der Verkleisterungsgrad nahm bis zur Verfestigungstemperatur von 55ºC zu und verringerte sich danach beträchtlich.

- by David Hernandez
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- BJT
- by Hubert Kaeslin
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- Body, Electrical, Doping, Concentration

ABSTRACT Growing need for high productivity is placing new demands on mechanisms connected with electrical motors.The demand for low cost Brushless DC (BLDC) motor has increased in industrial applications. A simple BLDC motor control algorithm for low cost motor drive applications using general purpose microcontrollers has been created and presented in this paper. Proposed design will allow the user to rotate the motor either clockwise or counter clockwise direction. Depending on the rotor position the sensor will give response to the controller circuit. Then the controller circuit will fix the direction of current following to the stator. The design controller circuit is also implemented. The overall design consists of microcontroller circuit, logic gates, switching devices (MOSFET/BJT), BLDC motor, sensors.

- by Erin Jahan
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- Engineering, Sensor, Microcontrollers, Microcontroller
- by Alejandro Sanchez
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- Analog Circuits, Process Design, BJT, Design Automation

ABSTRACT A trivalued memory circuit based on two cascoded metal-oxide-semiconductor field-effect transistor bipolar-junction-transistor negative-differential-resistance (MOS-BJT-NDR) devices is investigated. The MOS-BJT-NDR device is made of MOS and BJT devices, but it can show the NDR current-voltage characteristic by suitably arranging the MOS parameters. We demonstrate a trivalued memory circuit using the two-peak MOS-BJT-NDR circuit as the driver and a resistor as the load. The MOS-BJT-NDR devices and memory circuits are fabricated by the standard 0.35 mum SiGe process.

- by Yaw hwang Chen
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- Mathematical Sciences, Physical sciences, BJT, Bipolar Junction Transistor
- by Jonathan Abel
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- Engineering, Analog Circuits, Computational Modeling, Musical acoustics

In this paper, an UHF (Ultra High Frequency) power amplifier which can be used for small satellites and has 435.2MHz center frequency, 8MHz band width is designed. The main purpose of a power amplifier is increasing the power in the input... more

- by Mehmet DUMAN
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- BJT, UHF, Kararlılık, güç kuvvetlendirici
- by Laura Lugo
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- Electronics, BJT