Molecular beam epitaxy Research Papers (original) (raw)

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- Giant Magnetoresistance, Magnetic field, Molecular beam epitaxy, Physical sciences
- by sachin kumar
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- Science, III-V Semiconductors, Magnetic Materials, Semiconductor Devices
- by Lili Wang
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- Molecular beam epitaxy, Band Structure, Mathematical Sciences, Thin Film
- by tjipke hibma
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- Molecular beam epitaxy, Thin Film, Physical sciences, Iron Oxide
- by George Gilmer
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- Engineering, Monte Carlo Simulation, Monte Carlo, Applied Physics
- by Kin Yu
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- Engineering, Physics, Near Infrared, Molecular beam epitaxy

A mixed monolayer of 1,2-dihexanoyl-sn-glycero-3-phospho-l-serine (DHPS) and 1,2-dihexanoyl-sn-glycero-3-phosphocholine (DHPC) on an 1-octanethiol-modified gold substrate was visualized on the nanometer scale using in situ scanning tunneling microscopy (STM) in aqueous solution. DHPS clusters were evident as spotty domains. STM enabled us to distinguish DHPS molecules from DHPC molecules depending on their electronic structures. The signal of the DHPS domains was abolished by neutralization with Ca(2+). The addition of the PS + Ca(2+)-binding protein of annexin V to the Ca(2+)-treated monolayer gave a number of spots corresponding to a single annexin V molecule.

- by Giridhar S. Kulkarni
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- Engineering, Self Assembly, Semiconductor Devices, Advanced Materials
- by Hartmut Zabel
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- Engineering, Electron Microscopy, Crystal Growth, Epitaxial Growth
- by Andreas Waag
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- Engineering, Materials Science, Catalysts, Applied Physics

A unipolar injection quantum cascade (QC) laser grown in an AlGaAs/GaAs material system by molecular beam epitaxy, is reported. The active material is a 30 period sequence of injectors/active regions made from Al0.33Ga0.67As/GaAs-coupled quantum wells. For this device a special waveguide design, which complies with a GaAs heavily doped substrate and very short Al0.90Ga0.10As cladding layers, has been optimized. At

- by Philippe Collot and +1
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- Engineering, Quantum Cascade Lasers, Molecular beam epitaxy, Organic Semiconductor Laser
- by Lili Wang
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- Engineering, Materials Science, Semiconductors, Crystallization
- by Hubert Rauscher
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- Condensed Matter Physics, Kinetics, Molecular beam epitaxy, Adsorption
- by Anna Fontcuberta I Morral
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- Arsenic, Self Assembly, Molecular beam epitaxy, Nanowires
- by Cynthia Jameson
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- Technology, Molecular beam epitaxy, Physical sciences, CHEMICAL SCIENCES
- by Steven Denbaars and +1
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- Molecular beam epitaxy, Millimeter Wave Antennas, High Frequency, Electron Device
- by Theodore Moustakas
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- Engineering, Epitaxial Growth, Applied Physics, Molecular beam epitaxy
- by Kin Yu
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- III-V Semiconductors, Molecular beam epitaxy, Physical sciences, Band Gap
- by Z. Liliental-weber
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- Materials Engineering, Aerospace Engineering, Arsenic, Semiconductor Devices
- by Jen-inn Chyi
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- Genetic Expression, Molecular beam epitaxy, Photodetectors, Quality Factor
- by RC Rai
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- Engineering, Thermodynamics, Molecular beam epitaxy, Thin Film

... Z. Liliental-Weber, Y. Chen, S. Ruvimov, and J. Washburn Lawrence Berkeley National Laboratory 62/203, Berkeley, California 94720 (Received 10 ... is the so-called “microtube” observed in SiC, Al2O3, and ZnO [1–3]. These defects are... more

- by Steven Denbaars
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- Engineering, Applied Physics, Molecular beam epitaxy, Mathematical Sciences
- by Kin Yu
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- Engineering, III-V Semiconductors, Molecular beam epitaxy, Physical sciences
- by Andrew Steckl
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- Quantum Physics, Molecular beam epitaxy, Ultraviolet, Optical physics
- by Xi-jian Dai
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- Engineering, Applied Physics, Raman Spectroscopy, Molecular beam epitaxy

The magnetic properties of Co/Pt multilayers, in particular anisotropy and coercivity, are very sensitive to the Co layer thickness and less dependent on the Pt layer thickness. Such dependence is illustrated and discussed for e-beam evaporated Co/Pt multilayers of various Co and Pt thicknesses. It is shown that the largest perpendicular anisotropy occurs for Co layer thickness of 1–2 monolayers. The magnetic anisotropy of Co/Pt multilayers also strongly depends on the crystallographic orientation. The largest perpendicular magnetic anisotropy was obtained for Co/Pt multilayers with Pt(111) parallel to the film plane. This was demonstrated in both evaporated and sputtered polycrystalline multilayers, as well as in molecular beam epitaxy (MBE) grown Co/Pt(111) superlattices. By contrast, MBE grown 3.7 Å Co/16.8 Å Pt(100) multilayers show in-plane anisotropy, and 3.7 Å Co/16.8 Å Pt(110) multilayers exhibit very strong anisotropy within the film plane. These observations suggest that the magneto-crystalline anisotropy plays a key role in the magnetic anisotropy of these structures. Significantly enhanced effective magnetization was observed for Co/Pt multilayers with ultrathin Co layer.

- by Lili Wang
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- Molecular beam epitaxy, Scanning tunneling microscopy, Mathematical Sciences, Thin Film
- by Andrew Steckl
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- Engineering, III-V Semiconductors, Applied Physics, Molecular beam epitaxy

In this paper, we review our latest developments on the growth and properties of self-assembling quantum dot structures. The self-assembling growth technique which was initially developed using molecular beam epitaxy (MBE), has now been... more

- by Hartmut Zabel
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- Engineering, Applied Physics, Molecular beam epitaxy, X Rays
- by Raffaella Calarco
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- Engineering, III-V Semiconductors, Molecular beam epitaxy, Nanowires
- by Theodore Moustakas
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- Engineering, Applied Physics, Molecular beam epitaxy, Mathematical Sciences

We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, carrier lifetime and strain effects on the bandgap energy.

- by Suriati Paiman
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- Electron Microscopy, III-V Semiconductors, Nanowire, Terahertz spectroscopy
- by Mike Evans
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- Electronics, Molecular beam epitaxy, Power Generation, IEEE
- by Arvind Vengurlekar
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- Physics, Digital Circuits, Molecular beam epitaxy, Multiple Valued Logic
- by Seth R Bank
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- Engineering, Solar Cell, Applied Physics, Molecular beam epitaxy
- by Rosa Leon
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- III-V Semiconductors, Sample Preparation, Molecular beam epitaxy, Excited states
- by Lili Wang
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- Magnetic field, Molecular beam epitaxy, Physical sciences, CHEMICAL SCIENCES

A TiO2 nanotube catalyst was synthesized and observed by analytical transmission electron microscopy (TEM) combined with scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). It was revealed that the crystalline structure of the TiO2 nanotube is different from that of anatase and rutile TiO2. It was found that gold nanoparticles could be supported successfully on the TiO2 nanotube when applied using the deposition precipitation method. The catalytic activity of an Au/TiO2 nanotube for CO oxidation and H2 oxidation was examined and found to be different from Au on anatase or and rutile TiO2 catalyst. Copyright © 2005 John Wiley & Sons, Ltd.

- by Dina Abd-alkarim
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- Engineering, Materials Engineering, Mechanical Engineering, Chemical Engineering
- by Christian Pfluegl
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- Engineering, III-V Semiconductors, Applied Physics, Molecular beam epitaxy
- by Kuiwen Zhang
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- Mechanical Engineering, Chemical Engineering, Kinetics, Mass Spectrometry
- by Dr. Mohammed M Hasan
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- Electron Microscopy, Kinetics, Epitaxial Growth, Molecular beam epitaxy
- by Linda Romano
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- Engineering, III-V Semiconductors, Applied Physics, Transmission Electron Microscopy

In the present chapter we will discuss the creation of surface supported metal clusters through nucleation and growth in Molecular Beam Epitaxy (MBE). MBE is commonly used to grow thin epitaxial films from the vapour phase onto single crystal substrates under ultra-high vacuum (UHV) conditions [1]. In thin film growth the nucleation of stable clusters is the preliminary step to the immobilisation and further condensation of film atoms or molecules. If one is close to thermodynamic equilibrium it is irrelevant how and where this nucleation takes place and the film topography is given by the balance of the free energies of film surface, substrate surface, and the interface between the two [2]. However, the prerequisite to the growth is to be away from thermodynamic equilibrium, at least to some extent, since detailed balance arguments require that in equilibrium all processes appear with equal rates, including condensation and desorption. Therefore, the entire growth system hardly ado...

- by Harald Brune
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- Thermodynamics, Kinetics, Ultra High Vacuum Systems, Molecular beam epitaxy