3 nm process (original) (raw)
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| dbo:abstract | 3 nanòmetres (3 nm) és una tecnologia de fabricació de semiconductors en què els components tenen una grandària de 3 nm. És una millora de la tecnologia de 5 nm. La llei de Moore diu que la superfície és redueix a la meitat cada 2 anys, per tant el costat del quadrat de la nova tecnologia serà de . Sabent que els àtoms de silici tenen una distància entre ells de 0,543 nm, llavors el transistor té de l'ordre de 5 àtoms de llargada. El 2006, un eqip del va desenvolupar un transistor de 3 nm basat en tecnologia FinFET. El 2016, l'empresa TSMC va anunciar la construcció d'una fàbrica de semiconductors de 3-5 nm. El 2018, l'institut i l'empresa Cadence van anunciar la fabricació de semiconductors de 3 nm emprant tecnologia de Fotolitografia ultraviolada extrema i . (ca) In semiconductor manufacturing, the 3 nm process is the next die shrink after the 5 nanometer MOSFET (metal–oxide–semiconductor field-effect transistor) technology node. As of 2022, Taiwanese chip manufacturer TSMC plans to put a 3 nm, semiconductor node termed N3 into volume production by the second half of 2022. An enhanced 3 nm chip process called N3e may start production in 2023. South Korean chipmaker Samsung officially targets the same time frame as TSMC (as of May 2022) with the start of 3 nm production in the first half of 2022 using 3GAE process technology and with 2nd-gen 3 nm process (named 3GAP) to follow in 2023, while according to other sources Samsung's 3 nm process will debut in 2024. American manufacturer Intel plans to start 3 nm production in 2023. Samsung's 3 nm process is based on GAAFET (gate-all-around field-effect transistor) technology, a type of multi-gate MOSFET technology, while TSMC's 3 nm process will still use FinFET (fin field-effect transistor) technology, despite TSMC developing GAAFET transistors. Specifically, Samsung plans to use its own variant of GAAFET called MBCFET (multi-bridge channel field-effect transistor). Intel's 3 nm process (dubbed "Intel 3" without the "nm" suffix) will use a refined, enhanced and optimized version of FinFET technology compared to its previous process nodes in terms of performance gained per watt, use of EUV lithography and power and area improvement. The term "3 nanometer" has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors. According to the projections contained in the 2021 update of the International Roadmap for Devices and Systems published by IEEE Standards Association Industry Connection, a 3 nm node is expected to have a contacted gate pitch of 48 nanometers and a tightest metal pitch of 24 nanometers. However, in real world commercial practice, "3 nm" is used primarily as a marketing term by individual microchip manufacturers to refer to a new, improved generation of silicon semiconductor chips in terms of increased transistor density (i.e. a higher degree of miniaturization), increased speed and reduced power consumption. Moreover, there is no industry-wide agreement among different manufacturers about what numbers would define a 3 nm node. Typically the chip manufacturer refers to its own previous process node (in this case the 5 nm process node) for comparison. For example, TSMC has stated that its 3 nm FinFET chips will reduce power consumption by 25-30% at the same speed, increase speed by 10-15% at the same amount of power and increase transistor density by about 33% compared to its previous 5 nm FinFET chips. On the other hand, Samsung has stated that its 3 nm process will reduce power consumption by 45%, improve performance by 23%, and decrease surface area by 16% compared to its previous 5 nm process. EUV faces new challenges at 3 nm which lead to the required use of multipatterning. (en) 3奈米製程是半導體製造製程的一個水準。 (zh) |
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| dbp:list | MOSFET semiconductor device fabrication process (en) |
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| rdfs:comment | 3奈米製程是半導體製造製程的一個水準。 (zh) 3 nanòmetres (3 nm) és una tecnologia de fabricació de semiconductors en què els components tenen una grandària de 3 nm. És una millora de la tecnologia de 5 nm. La llei de Moore diu que la superfície és redueix a la meitat cada 2 anys, per tant el costat del quadrat de la nova tecnologia serà de . Sabent que els àtoms de silici tenen una distància entre ells de 0,543 nm, llavors el transistor té de l'ordre de 5 àtoms de llargada. El 2006, un eqip del va desenvolupar un transistor de 3 nm basat en tecnologia FinFET. (ca) In semiconductor manufacturing, the 3 nm process is the next die shrink after the 5 nanometer MOSFET (metal–oxide–semiconductor field-effect transistor) technology node. As of 2022, Taiwanese chip manufacturer TSMC plans to put a 3 nm, semiconductor node termed N3 into volume production by the second half of 2022. An enhanced 3 nm chip process called N3e may start production in 2023. South Korean chipmaker Samsung officially targets the same time frame as TSMC (as of May 2022) with the start of 3 nm production in the first half of 2022 using 3GAE process technology and with 2nd-gen 3 nm process (named 3GAP) to follow in 2023, while according to other sources Samsung's 3 nm process will debut in 2024. American manufacturer Intel plans to start 3 nm production in 2023. (en) |
| rdfs:label | 3 nanòmetres (ca) 3 nm process (en) 3納米制程 (zh) |
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