Failure of electronic components (original) (raw)
Electronic components have a wide range of failure modes. These can be classified in various ways, such as by time or cause. Failures can be caused by excess temperature, excess current or voltage, ionizing radiation, mechanical shock, stress or impact, and many other causes. In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits.
| Property | Value |
|---|---|
| dbo:abstract | Los componentes electrónicos tienen una amplia gama de formas en que pueden fallar. Estos se pueden clasificar de varias formas, como por tiempo o por causa. Las fallas pueden ser causadas por exceso de temperatura, exceso de corriente o voltaje, radiación ionizante, choque mecánico, estrés o impacto y muchas otras causas. En los dispositivos semiconductores, los problemas en el paquete del dispositivo pueden causar fallas debido a contaminación, tensión mecánica del dispositivo o circuitos abiertos o cortocircuitos. Las fallas ocurren con mayor frecuencia cerca del comienzo y cerca del final de la vida útil de las piezas, lo que da como resultado el gráfico de curva de la bañera de la función de riesgo. Los procedimientos se utilizan para detectar fallas tempranas. En los dispositivos semiconductores, las , irrelevantes para el funcionamiento normal, se vuelven importantes en el contexto de fallas; pueden ser tanto una fuente como una protección contra fallas. Las aplicaciones como los sistemas aeroespaciales, los sistemas de soporte vital, las telecomunicaciones, las señales ferroviarias y las computadoras utilizan una gran cantidad de componentes electrónicos individuales. El análisis de las propiedades estadísticas de las fallas puede brindar orientación en los diseños para establecer un nivel dado de confiabilidad. Por ejemplo, la capacidad de manejo de potencia de una resistencia puede reducirse considerablemente cuando se aplica en aeronaves de gran altitud para obtener una vida útil adecuada. Una falla repentina de apertura por falla puede causar múltiples fallas secundarias si esta es rápida y el circuito contiene una inductancia; esto provoca grandes picos de voltaje, que pueden superar los 500 voltios. Por tanto, una metalización rota en un chip puede provocar daños secundarios por sobretensión. La fuga térmica puede causar fallas repentinas que incluyen derretimiento, fuego o explosiones. (es) Electronic components have a wide range of failure modes. These can be classified in various ways, such as by time or cause. Failures can be caused by excess temperature, excess current or voltage, ionizing radiation, mechanical shock, stress or impact, and many other causes. In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits. Failures most commonly occur near the beginning and near the ending of the lifetime of the parts, resulting in the bathtub curve graph of failure rates. Burn-in procedures are used to detect early failures. In semiconductor devices, parasitic structures, irrelevant for normal operation, become important in the context of failures; they can be both a source and protection against failure. Applications such as aerospace systems, life support systems, telecommunications, railway signals, and computers use great numbers of individual electronic components. Analysis of the statistical properties of failures can give guidance in designs to establish a given level of reliability. For example, power-handling ability of a resistor may be greatly derated when applied in high-altitude aircraft to obtain adequate service life.A sudden fail-open fault can cause multiple secondary failures if it is fast and the circuit contains an inductance; this causes large voltage spikes, which may exceed 500 volts. A broken metallisation on a chip may thus cause secondary overvoltage damage. Thermal runaway can cause sudden failures including melting, fire or explosions. (en) |
| dbo:thumbnail | wiki-commons:Special:FilePath/Failed_SMPS_controller_IC_ISL6251.jpg?width=300 |
| dbo:wikiPageID | 26626178 (xsd:integer) |
| dbo:wikiPageLength | 40599 (xsd:nonNegativeInteger) |
| dbo:wikiPageRevisionID | 1124622932 (xsd:integer) |
| dbo:wikiPageWikiLink | dbr:Potentiometer dbr:Propagation_delay dbr:Elasticity_(physics) dbr:Electric_arc dbr:Electrical_cable dbr:Electrolytic_capacitor dbr:Electromigration dbr:Electronic_packaging dbr:Failure_mode dbr:Monolithic_microwave_integrated_circuit dbr:MESFET dbr:Varistor dbr:Soldering dbr:Stiction dbr:Antistatic_agent dbr:Arc_welding dbr:Hydrogen dbr:Biasing dbr:Reliability_(semiconductor) dbr:Charge_carrier dbr:Current_crowding dbr:Current_filament dbr:Current–voltage_characteristic dbr:VLSI dbr:Via_(electronics) dbr:Voltage_spike dbr:Indium_gallium_nitride dbr:Indium_tin_oxide dbr:Infrared dbr:Intermetallic dbr:Nucleation dbr:Silicon-controlled_rectifier dbr:Copper(II)_oxide dbr:Cosmic_ray dbr:Chlorinated_hydrocarbon dbr:Gate_oxide dbc:Engineering_failures dbr:Gallium_arsenide dbr:Gallium_nitride dbr:Conductive_anodic_filament dbr:Contact_protection dbr:Contact_resistance dbr:Contactor dbr:Copper dbr:Corrosion dbr:Red_phosphorus dbr:Tracer_gas dbr:Bathtub_curve dbr:MOSFET dbr:Silver_sulfide dbr:Stress_induced_leakage_current dbr:Stress_testing dbr:Damped_wave dbr:Hot_electron dbr:Microelectromechanical_systems dbr:Dislocation dbr:Dissipation_factor dbr:Gallium_arsenide_phosphide dbr:Helium dbr:Lead_frame dbr:Alkali_metal dbr:Aluminium_hydroxide dbr:Ammonia dbr:Amorphous dbr:EEPROM dbr:Aluminium_gallium_arsenide dbr:Breakdown_voltage dbr:Dielectric_loss dbr:Failure_rate dbr:Flux_(metallurgy) dbr:Fracture dbr:Thermal_conductivity dbr:Thermal_expansion dbr:Radio_frequency dbr:Relay dbr:Halogen dbr:Atacamite dbr:Ionizing_radiation dbr:Hydride dbr:Hydrolysis dbr:Hygroscopy dbr:Silicide dbr:Chloride dbr:Sulfur dbr:Threshold_voltage dbr:Trimmer_(electronics) dbr:Wear dbr:Whisker_(metallurgy) dbr:Zener_diode dbr:Burn-in dbr:Phosphoric_acid dbr:Phosphorus_pentoxide dbr:Ground_bounce dbr:Mechanical_vibration dbr:Indium_phosphide dbr:Inductance dbr:Capacitance dbr:Capacitor_plague dbc:Semiconductor_device_defects dbr:Printed_circuit_board dbr:Thermal_runaway dbr:Latchup dbr:Nonradiative_recombination dbr:Transmission_line dbr:Ohmic_contact dbr:Flame_retardant dbr:Tantalum_capacitor dbr:Outgassing dbr:Parasitic_structure dbr:Polysilicon dbr:Thermochromic dbr:Material_fatigue dbr:Barrier_metal dbr:Hot_carrier_injection dbr:Kirkendall_voiding dbr:Glass_transition_temperature dbr:Floating_gate dbr:Circuit_board dbr:Silver_migration dbr:Aluminium_interconnects dbr:Reverse_bias dbr:Leakage_current dbr:Solder_flux dbr:Joule_heat dbr:CCD_camera dbr:Dielectric_breakdown dbr:Tin_whisker dbr:File:Failed_SMPS_controller_IC_ISL6251.jpg dbr:File:Failed_transistor.jpg dbr:File:PCB_corrosion.jpg dbr:File:Resistor_damaged_arcing.jpg dbr:JEDEC78 dbr:Output_buffer |
| dbp:wikiPageUsesTemplate | dbt:Electronic_systems dbt:Citation_needed dbt:Main dbt:More_citations_needed dbt:Reflist dbt:See_also dbt:Short_description dbt:Use_British_English dbt:Use_dmy_dates |
| dcterms:subject | dbc:Engineering_failures dbc:Semiconductor_device_defects |
| rdf:type | owl:Thing yago:Advocate109774783 yago:CausalAgent100007347 yago:Enthusiast110059582 yago:LivingThing100004258 yago:Object100002684 yago:Organism100004475 yago:Person100007846 yago:PhysicalEntity100001930 yago:YagoLegalActor yago:YagoLegalActorGeo yago:SportsFan110639925 yago:Supporter110677713 yago:Whole100003553 yago:WikicatFans |
| rdfs:comment | Electronic components have a wide range of failure modes. These can be classified in various ways, such as by time or cause. Failures can be caused by excess temperature, excess current or voltage, ionizing radiation, mechanical shock, stress or impact, and many other causes. In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits. (en) Los componentes electrónicos tienen una amplia gama de formas en que pueden fallar. Estos se pueden clasificar de varias formas, como por tiempo o por causa. Las fallas pueden ser causadas por exceso de temperatura, exceso de corriente o voltaje, radiación ionizante, choque mecánico, estrés o impacto y muchas otras causas. En los dispositivos semiconductores, los problemas en el paquete del dispositivo pueden causar fallas debido a contaminación, tensión mecánica del dispositivo o circuitos abiertos o cortocircuitos. (es) |
| rdfs:label | Modes de fallada (ca) Fallas de componentes electrónicos (es) Failure of electronic components (en) |
| rdfs:seeAlso | dbr:Reliability_(semiconductor) |
| owl:sameAs | freebase:Failure of electronic components yago-res:Failure of electronic components wikidata:Failure of electronic components dbpedia-ca:Failure of electronic components dbpedia-es:Failure of electronic components https://global.dbpedia.org/id/4ji8X |
| prov:wasDerivedFrom | wikipedia-en:Failure_of_electronic_components?oldid=1124622932&ns=0 |
| foaf:depiction | wiki-commons:Special:FilePath/Failed_SMPS_controller_IC_ISL6251.jpg wiki-commons:Special:FilePath/Failed_transistor.jpg wiki-commons:Special:FilePath/PCB_corrosion.jpg wiki-commons:Special:FilePath/Resistor_damaged_arcing.jpg |
| foaf:isPrimaryTopicOf | wikipedia-en:Failure_of_electronic_components |
| is dbo:wikiPageRedirects of | dbr:Failure_modes_of_electronics dbr:Electrical_overstress dbr:Electric_overstress |
| is dbo:wikiPageWikiLink of | dbr:Failure_modes_of_electronics dbr:Dye-and-pry dbr:Overclocking dbr:Electrical_overstress dbr:Ghost dbr:Computer_data_storage dbr:Magic_smoke dbr:RIFA_(manufacturer) dbr:USB_flash_drive dbr:Electric_overstress |
| is foaf:primaryTopic of | wikipedia-en:Failure_of_electronic_components |
