Alloy effects in Ga1−xInxN/GaN heterostructures (original) (raw)

Alloy effects in GaInN/GaN heterostructures

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Computational study of GaAs 1− x N x and GaN 1− y As y alloys and arsenic impurities in GaN

Tapio T Rantala

Journal of Physics: Condensed Matter, 2006

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Ellipsometric investigation of optical constant and band gap of Ga1−xInxN/GaN (x≤0.12) heterostructures

Solid State Communications, 2000

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Microscopic parameters of materials containing GaN/AlN and InAs/AlAs heterostructures

Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment - NUCL INSTRUM METH PHYS RES A, 2005

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Pseudopotential calculations of electronic properties of Ga1−xInxN alloys with zinc-blende structure

Solid-State Electronics, 2000

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Band gap bowing parameter in pseudomorphic Al x Ga1− x N/GaN high electron mobility transistor structures

R Muraalidharan

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GaN[sub 1−x]Bi[sub x]: Extremely mismatched semiconductor alloys

Applied Physics Letters, 2010

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First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide

Materials Science in Semiconductor Processing, 2015

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Lattice and energy band engineering in AlInGaN/GaN heterostructures

Applied Physics Letters, 2000

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Modelling of indium rich clusters in MOCVD InxGa1−xN/GaN multilayers

Grzegorz Jurczak

Journal of Alloys and Compounds, 2004

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Systematic theoretical investigations of compositional inhomogeneity in InxGa1−xN thin films on GaN(0001)

Journal of Crystal Growth, 2007

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Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods

Maurizio Mattesini, Martin Magnuson

2010

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Observation of A1(LO), E2(high) and B1(high) phonon modes in Inx Ga1-xN alloys with x = 0.11-0.54

Physica status solidi, 2011

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Molecular beam epitaxy of highly mismatched N-rich GaN1-xSbx and InN1-xAsx alloys

Z. Liliental-weber

Journal of Vacuum Science & Technology B, 2013

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Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory

2006

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Atomic-scale structure and electronic properties of GaN/GaAs superlattices

Suvankar Chakraverty

Applied Physics Letters, 1996

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Tight binding modelling of band offsets in GaN and ZnSe based heterostructures

physica status solidi (b), 2003

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Structural and optical properties of an InxGa1−xN/GaN nanostructure

Surface Science, 2007

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Structural and local electrical properties of AlInN/AlN/GaN heterostructures

Daniela Cavalcoli

Physica B: Condensed Matter, 2012

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Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure

physica status solidi (a), 1999

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Optical and reduced band gap inn- andp-type GaN and AlN

Journal of Applied Physics, 2002

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Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

AIP Advances, 2014

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Effect of N interstitial complexes on the electronic properties of GaAs1−xNx alloys from first principles

Physical Review Materials, 2019

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Intersubband energies in Al1−yInyN/Ga1−xInxN heterostructures with lattice constant close to aGaN

Kristian Berland

Superlattices and Microstructures, 2012

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Band gap shift in Al1-xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy

Daniela Cavalcoli, Beatrice Fraboni

Applied Physics …, 2011

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Accurate Electronic, Transport, and Bulk Properties of Gallium Arsenide (GaAs)

Yacouba DIAKITE

2016

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Tight binding modelling of electronic structure of GaPN/GaP, InAsN/InAs and GaAsN/GaAs heterostructures

physica status solidi (c), 2008

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Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al[sub 0.5]Ga[sub 0.5]N

Theodore Moustakas

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998

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