Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon (original) (raw)

Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon

T. Lohner

Thin Solid Films, 1993

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Ion-implantation induced anomalous surface amorphization in silicon

khanh khanh

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994

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Ellipsometric characterization of shallow damage profiles created by Xe-implantation into silicon

Emad Ramadan

2002

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Ion implantation induced buried disorder studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry

T. Lohner

Vacuum, 1998

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Characterization of ion implanted silicon by ellipsometry and channeling

T. Lohner

Nuclear Instruments and Methods in Physics Research, 1983

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Damage to Crystalline Silicon Following Implantation by Low Energy Silicon Ions

Nicole Herbots

MRS Proceedings, 1992

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EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon

R. Nipoti

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995

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Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry

T. Lohner

1991

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Damage evolution in low-energy ion implanted silicon

Martin Chicoine

Physical Review B, 2007

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Ion-Implantation of Silicon in Gallium-Arsenide - Damage and Annealing Characterizations

R. Nipoti

Nuclear Instruments & Methods in Physics Research, 1983

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Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation

Виктор Мордкович, Kirill Shcherbachev

Crystallography Reports, 2013

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Damage profiles in as-implanted silicon: fluence dependence

R. Nipoti

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996

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Ellipsometric and Rutherford backscattering characterization of low-energy hydrogen-, helium-, neon-, and argon-bombarded silicon

Mohammed BOULESBAA

Journal of Applied Physics, 1988

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A detailed physical model for ion implant induced damage in silicon

Borna Obradovic

IEEE Transactions on Electron Devices, 1998

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Investigation of arsenic-implanted silicon by optical reflectometry

Vladimir Stavrov

Vacuum, 1991

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Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing

Andreas Othonos

Thin Solid Films, 2006

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Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometry

Binaya Kumar Panigrahi

Journal of Applied Physics, 2001

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Damage-to-dose ratio after low energy silicon ion implantation into crystalline silicon

Nicole Herbots

Journal of Materials Research, 1993

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Determination of complex dielectric functions of ion implanted and implanted-annealed amorphous silicon by spectroscopic ellipsometry

T. Lohner

Journal of Applied Physics, 1992

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Correlation between structural defects and optical properties in ion-implanted silicon

Werner Wesch

Physica Status Solidi (a), 1981

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Implanted damage evolution in sequential annealed silicon

Octavian Buiu

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994

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Investigation of Ion implantation induced electrically active defects in p-type silicon

Jayantha Senawiratne

2009 IEEE International SOI Conference, 2009

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Pre-amorphization damage study in as-implanted silicon

Marina Berti

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995

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Room temperature micro-photoluminescence measurements for monitoring defects in low-energy high-dose As and B implanted silicon

John Byrnes

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Electrical measurement of the lattice damage induced by -particle implantation in silicon

Santolo Daliento

Vacuum, 2005

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Electroluminescence analysis of the structural damage created in systems by Ar ion implantation

Sebastia Bota

Solid-State Electronics, 1996

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